1. Single Layer Molybdenum Disulfide under Direct Out-of-PlaneCompression: Low-Stress Band-Gap Engineering.
- Author
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Miriam PenÌa-AÌlvarez, Elena del Corro, AÌngel Morales-GarciÌa, Ladislav Kavan, Martin Kalbac, and Otakar Frank
- Subjects
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MOLYBDENUM disulfide , *COMPRESSION loads , *STRAINS & stresses (Mechanics) , *BAND gaps , *ELECTRONIC structure , *MONOMOLECULAR films - Abstract
Tuning the electronic structureof 2D materials is a very powerful asset toward tailoring their propertiesto suit the demands of future applications in optoelectronics. Strainengineering is one of the most promising methods in this regard. Wedemonstrate that even very small out-of-plane axial compression readilymodifies the electronic structure of monolayer MoS2. Aswe show through in situ resonant and nonresonant Raman spectroscopyand photoluminescence measurements combined with theoretical calculations,the transition from direct to indirect band gap semiconductor takesplace at â¼0.5 GPa, and the transition to a semimetal occursat stress smaller than 3 GPa. [ABSTRACT FROM AUTHOR]
- Published
- 2015
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