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Developing stable and highly efficient thick-film organic solar cells (OSCs) is crucial for the large-scale commercial application of organic photovoltaics. A novel synergistic dilution strategy to address this issue, using Polymethyl Methacrylate (PMMA) -modified zinc oxide (ZnO) as the interfacial layer, is introduced. This strategy effectively mitigates oxygen defects in ZnO while also regulating the self-assembly process of the active layer to achieve an ordered distribution of donors and acceptors. In synergistic diluted devices, the dynamic disorder is reduced owing to the suppression of electron-phonon coupling, while the static disorder is suppressed by improved molecular stacking and enhanced intermolecular interactions. Consequently, the 300 nm PM6:L8-BO device post-synergistic dilution manifests a marked enhancement in device performance, achieving a photovoltaic power conversion efficiency (PCE) >17% with excellent thermal stability. A typical ternary system is selected to explore the general applicability of synergistic dilution strategy, the PCE has been enhanced significantly from 17.89% to 18.72%, which falls within the range of the highest values among inverted single junction OSCs. As a practical application that depends on the pivotal synergy between high efficiency and stability, this approach paves the way for large-scale implementation of OSCs and ensures cost-effectiveness., (© 2024 Wiley‐VCH GmbH.)

A high-temperature thin/thick-film strain gauge (TFSG) shows development prospects for in situ strain monitoring of hot-end components due to their small perturbations, no damage, and fast response. Direct ink writing (DIW) 3D printing is an emerging and facile approach for the rapid fabrication of TFSG. However, TFSGs prepared based on 3D printing with both high thermal stability and low temperature coefficient of resistance (TCR) over a wide temperature range remain a great challenge. Here, we report a AgPd TFSG with a glass-ceramic protective layer based on DIW. By encapsulating the AgPd sensitive layer and regulating the Pd content, the AgPd TFSG demonstrated a low TCR (191.6 ppm/°C) from 50 to 800 °C and ultrahigh stability (with a resistance drift rate of 0.14%/h at 800 °C). Meanwhile, the achieved specifications for strain detection included a strain sensing range of ±500 με, fast response time of 153 ms, gauge factor of 0.75 at 800 °C, and high durability of >8000 cyclic loading tests. The AgPd TFSG effectively monitors strain in superalloys and can be directly deposited onto cylindrical surfaces, demonstrating the scalability of the presented approach. This work provides a strategy to develop TFSGs for in situ sensing of complex curved surfaces in harsh environments.

This paper is focused on a new copper-nickel thick film resistive paste which was designed and experimentally developed for the realization of low-ohmic power resistors. This copper-nickel paste has been designed for use in combination with thick printed copper conductors and in comparison with conventional ruthenium-based thick film resistor pastes allows firing in a nitrogen protective atmosphere. The copper-nickel paste was prepared from copper and nickel microparticles, glass binder particles and a combination of organic solvents optimized for its firing in a nitrogen atmosphere. This paper covers a detailed description of copper-nickel paste composition and its thermal properties verified by simultaneous thermal analysis, a description of the morphology of dried and fired copper-nickel films, as well as the electrical parameters of the final printed resistors. It has been proven by electron microscopy with element distribution analysis that copper and nickel microparticles diffused together during firing and created homogenous copper-nickel alloy film. This film shows a low temperature coefficient of resistance ±45 × 0−6 K−1 and low sheet resistance value 45 mΩ/square. It was verified that formulated copper-nickel paste is nitrogen-fireable and well-compatible with thick printed copper pastes. This combination allows the realization of power substrates with directly integrated low-ohmic resistors. [ABSTRACT FROM AUTHOR]