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Dielectric breakdown (BD) is known to cause component failure in electronic devices and high‐voltage power lines over many decades. In recent years, this failure mechanism has been exploited to intentionally form nanoscale filaments in resistive random‐access‐memory (ReRAM) devices for artificial intelligence (AI). The statistical nature of this failure mechanism, known as the inverse size scaling law based on the weakest‐link theory, dictates the ever‐higher forming voltages for ReRAM devices, in turn, requiring additional peripheral transistors. This law also causes diminishing lifetimes of electronic components for future generations of very‐large‐integrated circuits (VLSI) technology. Currently, the semiconductor industry faces these scaling barriers limiting the miniaturization of both VLSI and AI hardware technology. Here, experimental evidence of a reverse area dependence is presented by introducing an innovative fabrication process with a hydrogen‐plasma‐treated layer in a bilayer HfO2 structure. Using joint order statistics rather than traditional extreme‐value statistics, a physics‐based statistical model is developed in agreement with the experimental data, thus demonstrating that there is no fundamental reason preventing this law from being reversed or altered. These findings will have a significant impact on both technology scaling and fabrication innovation for electronic and/or bioinspired nanomaterials; moreover, stimulate much research in physics, statistics, and reliability. [ABSTRACT FROM AUTHOR]

Abstract Dielectric breakdown (BD) is known to cause component failure in electronic devices and high‐voltage power lines over many decades. In recent years, this failure mechanism has been exploited to intentionally form nanoscale filaments in resistive random‐access‐memory (ReRAM) devices for artificial intelligence (AI). The statistical nature of this failure mechanism, known as the inverse size scaling law based on the weakest‐link theory, dictates the ever‐higher forming voltages for ReRAM devices, in turn, requiring additional peripheral transistors. This law also causes diminishing lifetimes of electronic components for future generations of very‐large‐integrated circuits (VLSI) technology. Currently, the semiconductor industry faces these scaling barriers limiting the miniaturization of both VLSI and AI hardware technology. Here, experimental evidence of a reverse area dependence is presented by introducing an innovative fabrication process with a hydrogen‐plasma‐treated layer in a bilayer HfO2 structure. Using joint order statistics rather than traditional extreme‐value statistics, a physics‐based statistical model is developed in agreement with the experimental data, thus demonstrating that there is no fundamental reason preventing this law from being reversed or altered. These findings will have a significant impact on both technology scaling and fabrication innovation for electronic and/or bioinspired nanomaterials; moreover, stimulate much research in physics, statistics, and reliability.

This work focused on the effects of electroforming ambient temperature and annealing process on the metal oxide multilayer switching resistive random access memory (RRAM) device. We developed Pt/HfO2/TiO2/HfO2/Pt RRAM cells with annealing and without annealing process. Annealed devices are electroformed at a high ambient temperature 80 °C (A-80). Non-annealed devices are electroformed at low atmosphere temperature 25 °C (NA-25). We investigate the outcomes of NA-25 and A-80 devices. Results confirmed that annealed and high ambient temperature formed devices (A-80) contribute to the low operating voltage, improved uniformity, and reliability compared to NA-25 device. [ABSTRACT FROM AUTHOR]