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Among expanding discoveries of quantum phases in moir\'e superlattices, correlated insulators stand out as both the most stable and most commonly observed. Despite the central importance of these states in moir\'e physics, little is known about their underlying nature. Here, we use pump-probe spectroscopy to show distinct time-domain signatures of correlated insulators at fillings of one (v = -1) and two (v = -2) holes per moir\'e unit cell in the angle-aligned WSe2/WS2 system. Following photo-doping, we find that the disordering time of the v = -1 state is independent of excitation density (n_ex), as expected from the characteristic phonon response time associated with a polaronic state. In contrast, the disordering time of the v = -2 state scales with (n_ex)^-0.5, in agreement with plasmonic screening from free holons and doublons. These states display disparate reordering behavior dominated either by first order (v = -1) or second order (v = -2) recombination, suggesting the presence of Hubbard excitons and free carrier-like holons/doublons, respectively. Our work delineates the roles of electron-phonon (e-ph) versus electron-electron (e-e) interactions in correlated insulators on the moir\'e landscape and establishes non-equilibrium responses as mechanistic signatures for distinguishing and discovering quantum phases., Comment: 18 pages, 4 figures, +10 Supporting figures. arXiv admin note: text overlap with arXiv:2307.16563

Two-dimensional moir\'e materials have emerged as the most versatile platforms for realizing quantum phases of electrons. Here, we explore the stability origins of correlated states in WSe2/WS2 moir\'e superlattices. We find that ultrafast electronic excitation leads to melting of the Mott states on time scales five times longer than predictions from the charge hopping integrals and the melting rates are thermally activated, with activation energies of 18 and 13 meV for the one- and two-hole Mott states, respectively, suggesting significant electron-phonon coupling. DFT calculation of the one-hole Mott state confirms polaron formation and yields a hole-polaron binding energy of 16 meV. These findings reveal a close interplay of electron-electron and electron-phonon interactions in stabilizing the polaronic Mott insulators at transition metal dichalcogenide moir\'e interfaces., Comment: 14 pages, 4 figures, 11 SI figures

Since the seminal work on MoS2 monolayers, photoexcitation in atomically-thin transition metal dichalcogenides (TMDCs) has been assumed to result in excitons with large binding energies (~ 200-600 meV). Because the exciton binding energies are order-of-magnitude larger than thermal energy at room temperature, it is puzzling that photocurrent and photovoltage generation have been observed in TMDC-based devices, even in monolayers with applied electric fields far below the threshold for exciton dissociation. Here, we show that the photoexcitation of TMDC monolayers results in a substantial population of free charges. Performing ultrafast terahertz (THz) spectroscopy on large-area, single crystal WS2, WSe2, and MoSe2 monolayers, we find that ~10% of excitons spontaneously dissociate into charge carriers with lifetimes exceeding 0.2 ns. Scanning tunnelling microscopy reveals that photo-carrier generation is intimately related to mid-gap defect states, likely via trap-mediated Auger scattering. Only in state-of-the-art quality monolayers14, with mid-gap trap densities as low as 10^9 cm^-2, does intrinsic exciton physics start to dominate the THz response. Our findings reveal that excitons or excitonic complexes are only the predominant quasiparticles in photo-excited TMDC monolayers at the limit of sufficiently low defect densities., Comment: 18 pages, 5 figures, SI

We report a study of the noncentrosymmetric TaReSi superconductor by means of muon-spin rotation and relaxation ($\mu$SR) technique, complemented by electronic band-structure calculations. Its superconductivity, with $T_c$ = 5.5 K and upper critical field $\mu_0H_\mathrm{c2}(0)$ $\sim$ 3.4 T, was characterized via electrical-resistivity- and magnetic-susceptibility measurements. The temperature-dependent superfluid density, obtained from transverse-field $\mu$SR, suggests a fully-gapped superconducting state in TaReSi, with an energy gap $\Delta_0$ = 0.79 meV and a magnetic penetration depth $\lambda_0$ = 562 nm. The absence of a spontaneous magnetization below $T_c$, as confirmed by zero-field $\mu$SR, indicates a preserved time-reversal symmetry in the superconducting state. The density of states near the Fermi level is dominated by the Ta- and Re-5$d$ orbitals, which account for the relatively large band splitting due to the antisymmetric spin-orbit coupling. In its normal state, TaReSi behaves as a three-dimensional Kramers nodal-line semimetal, characterized by an hourglass-shaped dispersion protected by glide reflection. By combining non\-triv\-i\-al electronic bands with intrinsic superconductivity, TaReSi is a promising material for investigating the topological aspects of noncentrosymmetric superconductors., Comment: 9 pages, 9 figures; accepted by Phys. Rev. B

We report a study of NiBi$_3$ single crystals by means of electrical-resistivity-, magnetization-, and muon-spin rotation and relaxation ($\mu$SR) measurements. As a single crystal, NiBi$_3$ adopts a needle-like shape and exhibits bulk superconductivity with $T_c \approx 4.1$ K. By applying magnetic fields parallel and perpendicular to the $b$-axis of NiBi$_3$, we establish that its lower- and upper critical fields, as well as the magnetic penetration depths show slightly different values, suggesting a weakly anisotropic superconductivity. In both cases, the zero-temperature upper critical fields are much smaller than the Pauli-limit value, indicating that the superconducting state is constrained by the orbital pair breaking. The temperature evolution of the superfluid density, obtained from transverse-field $\mu$SR, reveals a fully-gapped superconductivity in NiBi$_3$, with a shared superconducting gap $\Delta_0$ = 2.1 $k_\mathrm{B}$$T_c$ and magnetic penetration depths $\lambda_0$ = 223 and 210 nm for $H \parallel b$- and $H \perp b$, respectively. The lack of spontaneous fields below $T_c$ indicates that time-reversal symmetry is preserved in NiBi$_3$. The absence of a fast muon-spin relaxation and/or precession in the zero-field $\mu$SR spectra definitely rules out any type of magnetic ordering in NiBi$_3$ single crystals. Overall, our investigation suggests that NiBi$_3$ behaves as a conventional $s$-type superconductor., Comment: 8 pages, 8 figures, accepted by Phys. Rev. B

The CuIr$_{2-x}$Ru$_x$Te$_4$ superconductors (with a $T_c$ around 2.8 K) can host charge-density waves, whose onset and interplay with superconductivity are not well known at a microscopic level. Here, we report a comprehensive study of the $x$ = 0 and 0.05 cases, whose superconductivity was characterized via electrical-resistivity-, magnetization-, and heat-capacity measurements, while their microscopic superconducting properties were studied via muon-spin rotation and relaxation ($\mu$SR). In CuIr$_{2-x}$Ru$_x$Te$_4$, both the temperature-dependent electronic specific heat and the superfluid density (determined via transverse-field $\mu$SR) are best described by a two-gap (s+d)-wave model, comprising a nodeless gap and a gap with nodes. The multigap superconductivity is also supported by the temperature dependence of the upper critical field $H_\mathrm{c2}(T)$. However, under applied pressure, a charge-density-wave order starts to develop and, as a consequence, the superconductivity of CuIr$_2$Te$_4$ achieves a more conventional s-wave character. From a series of experiments, we provide ample evidence that the CuIr$_{2-x}$Ru$_x$Te$_4$ family belongs to the rare cases, where an unconventional superconducting pairing is found near a charge-density-wave quantum critical point., Comment: 10 pages, 12 figures

Two-dimensional (2D) transition metal dichalcogenides (TMDC) and their moir\'e interfaces have been demonstrated for correlated electron states, including Mott insulators and electron/hole crystals commensurate with moir\'e superlattices. Here we present spectroscopic evidences for ordered bosons - interlayer exciton crystals in a WSe2/MoSe2/WSe2 trilayer, where the enhanced Coulomb interactions over those in heterobilayers have been predicted to result in exciton ordering. While the dipolar interlayer excitons in the heterobilayer may be ordered by the periodic moir\'e traps, their mutual repulsion results in de-trapping at exciton density n_ex larger than 10^11 cm^-2 to form mobile exciton gases and further to electron-hole plasmas, both accompanied by broadening in photoluminescence (PL) peaks and large increases in mobility. In contrast, ordered interlayer excitons in the trilayer are characterized by negligible mobility and by sharper PL peaks persisting to n_ex approximately 10^12 cm^-2. We present evidences for the predicted quadrupolar exciton crystal and its transitions to dipolar excitons either with increasing n_ex or by an applied electric field. These ordered interlayer excitons may serve as models for the exploration of quantum phase transitions and quantum coherent phenomena., Comment: 19 pages, 4 figures, SI

We report a comprehensive study of the Zr$_5$Pt$_3$C$_x$ superconductors, with interstitial carbon comprised between 0 and 0.3. At a macroscopic level, their superconductivity, with $T_c$ ranging from 4.5 to 6.3 K, was investigated via electrical-resistivity-, magnetic-susceptibility-, and specific-heat measurements. The upper critical fields $\mu_0H_\mathrm{c2}$ $\sim$ 7 T were determined mostly from measurements of the electrical resistivity in applied magnetic fields. The microscopic electronic properties were investigated by means of muon-spin rotation and relaxation ($\mu$SR) and nuclear magnetic resonance (NMR) techniques. In the normal state, NMR relaxation data indicate an almost ideal metallic behavior, confirmed by band-structure calculations, which suggest a relatively high electronic density of states at the Fermi level, dominated by the Zr 4$d$ orbitals. The low-temperature superfluid density, obtained via transverse-field $\mu$SR, suggests a fully-gapped superconducting state in Zr$_5$Pt$_3$ and Zr$_5$Pt$_3$C$_{0.3}$, with a zero-temperature gap $\Delta_0$ = 1.20 and 0.60 meV and a magnetic penetration depth $\lambda_0$ = 333 and 493 nm, respectively. The exponential dependence of the NMR relaxation rates below $T_c$ further supports a nodeless superconductivity. The absence of spontaneous magnetic fields below the onset of superconductivity, as determined from zero-field $\mu$SR measurements, confirms a preserved time-reversal symmetry in the superconducting state of Zr$_5$Pt$_3$C$_x$. In contrast to a previous study, our $\mu$SR and NMR results suggest a conventional superconductivity in the Zr$_5$Pt$_3$C$_x$ family, independent of the C content., Comment: 9 pages, 11 figures, accepted by Phys. Rev. B

Many crystalline solids possess strongly anharmonic soft phonon modes characterized by diminishing frequency as temperature approaches a critical point associated with a symmetry breaking phase transition. While electron-soft phonon coupling can introduce unique scattering channels for charge carriers in ferroelectrics, recent studies on the non-ferroelectric lead halide perovskites have also suggested the central role of anharmonic phonons bearing resemblance to soft modes in charge carrier screening. Here we apply coherent phonon spectroscopy to directly study electron coupling to the soft transverse optical (TO) phonon mode in a ferroelectric semiconductor SbSI. Photo-generated charge carriers in SbSI are found to be exceptionally long lived and are associated with a transient electro-optical effect that can be explained by interactions between charge carriers and thermally stimulated soft-phonon excitations. These results provide strong evidence for the role of electron-soft phonon coupling in the efficient screening of charge carriers and in reducing charge recombination rates, both desirable properties for optoelectronics., Comment: 15 pages, 4 figures, 6 pages SI

A search for the hadronic decays of the $h_{c}$ meson to the final states $p\bar{p}\pi^{+}\pi^{-}\pi^{0}$, $p\bar{p}\eta$, and $p\bar{p}\pi^0$ via the process $\psi(3686) \to \pi^{0}{h_c}$ is performed using $(4.48\pm0.03)\times10^{8}$ $\psi(3686)$ events collected with the BESIII detector. The decay channel $h_{c}\to p\bar{p}\eta$ is observed for the first time with a significance greater than $5\sigma$ and a branching fraction of $\left( {6.41 \pm 1.74 \pm 0.53 \pm 1.00} \right) \times {10^{ -4}}$, where the uncertainties are statistical, systematic, and that from the branching fraction of $\psi(3686)\to\pi^{0}h_{c}$. Strong evidence for the decay ${h_c} \to p\bar{p}{\pi^+}{\pi^-}{\pi^0}$ is found with a significance of $4.9\sigma$ and a branching fraction of $\left( {3.84 \pm 0.83 \pm0.69} \pm 0.58 \right) \times {10^{ - 3}}$. The significances include systematic uncertainties. No clear signal of the decay $h_c\to p\bar{p}\pi^{0}$ is found, and an upper limit of $6.59\times 10^{-4}$ on its branching fraction is set at the 90% confidence level.

Using $e^{+}e^{-}$ annihilation data corresponding to a total integrated luminosity of $6.32$ fb$^{-1}$ collected at the center-of-mass energies between 4.178 and 4.226 GeV with the BESIII detector, we perform an amplitude analysis of the decay $D^+_s \to K^-K^+\pi^+\pi^+\pi^-$ and determine the relative fractions and phases of different intermediate processes. Absolute branching fraction of $D^+_s\to K^-K^+\pi^+\pi^+\pi^-$ decay is measured to be ($6.60\pm0.47_{\rm stat.}\pm0.35_{\rm syst.})\times 10^{-3}$. The dominant intermediate process is $D_{s}^{+} \to a_1(1260)^+\phi, \phi\to K^-K^+, a_1(1260)^+\to \rho\pi^+, \rho\to\pi^+\pi^-$, with a branching fraction of $(5.16\pm0.41_{\rm stat.}\pm0.27_{\rm syst.})\times 10^{-3}$.

We report on systematic muon-spin rotation and relaxation ($\mu$SR) studies of the magnetic properties of EuAl$_4$ and EuGa$_4$ single crystals at a microscopic level. Transverse-field $\mu$SR measurements, spanning a wide temperature range (from 1.5 to 50 K), show clear bulk AFM transitions, with an almost 100% magnetic volume fraction in both cases. Zero-field $\mu$SR measurements, covering both the AFM and the paramagnetic (PM) states, reveal internal magnetic fields $B_\mathrm{int}(0) = 0.33$ T and 0.89 T in EuAl$_4$ and EuGa$_4$, respectively. The transverse muon-spin relaxation rate $\lambda_\mathrm{T}$, a measure of the internal field distribution at the muon-stopping site, shows a contrasting behavior. In EuGa$_4$, it decreases with lowering the temperature, reaching its minimum at zero temperature, $\lambda_\mathrm{T}(0) = 0.71$ $\mu$s$^{-1}$. In EuAl$_4$, it increases significantly below $T_\mathrm{N}$, to reach 58 $\mu$s$^{-1}$ at 1.5 K, most likely reflecting the complex magnetic structure and the competing interactions in the AFM state of EuAl$_4$. In both compounds, the temperature-dependent longitudinal muon-spin relaxation $\lambda_\mathrm{L}(T)$, an indication of the rate of spin fluctuations, diverges near the onset of AFM order, followed by a significant drop at $T < T_\mathrm{N}$. In the AFM state, spin fluctuations are much stronger in EuAl$_4$ than in EuGa$_4$, while being comparable in the PM state. The evidence of robust spin fluctuations against the external magnetic fields provided by $\mu$SR may offer new insights into the origin of the topological Hall effect and the possible magnetic skyrmions in the EuAl$_4$ and EuGa$_4$ compounds., Comment: 10 pages, 7 figures, accepted by Phys. Rev. B

We report on systematic temperature- and magnetic field-dependent studies of the EuGa$_4$ binary compound, which crystallizes in a centrosymmetric tetragonal BaAl$_4$-type structure with space group $I4/mmm$. The electronic properties of EuGa$_4$ single crystals, with an antiferromagnetic (AFM) transition at $T_\mathrm{N} \sim 16.4$ K, were characterized via electrical resistivity and magnetization measurements. A giant nonsaturating magnetoresistance was observed at low temperatures, reaching $\sim 7 \times 10^4$ % at 2 K in a magnetic field of 9 T. In the AFM state, EuGa$_4$ undergoes a series of metamagnetic transitions in an applied magnetic field, clearly manifested in its field-dependent electrical resistivity. Below $T_\mathrm{N}$, in the $\sim$4-7 T field range, we observe also a clear hump-like anomaly in the Hall resistivity which is part of the anomalous Hall resistivity. We attribute such a hump-like feature to the topological Hall effect, usually occurring in noncentrosymmetric materials known to host topological spin textures (as e.g., magnetic skyrmions). Therefore, the family of materials with a tetragonal BaAl$_4$-type structure, to which EuGa$_4$ and EuAl$_4$ belong, seems to comprise suitable candidates on which one can study the interplay among correlated-electron phenomena (such as charge-density wave or exotic magnetism) with topological spin textures and topologically nontrivial bands., Comment: 15 pages, 6 figures; to be appeared on JPCM