Search

Resistive random access memory has been widely studied as a powerful candidate for building future memories and realizing high-efficiency artificial neuromorphic systems. In this paper, gold nanoparticles (Au NPs) are doped in a leaf solution of Scindapsus aureus (SA) as the active layer to fabricate Al/SA:Au NPs/ITO/glass resistive random access memory. The device exhibits stable bipolar resistance switching characteristics. More importantly, the device's multilevel storage capabilities and synaptic potentiation and depression behaviour have been proven. Compared with the device without doped Au NPs in the active layer, the device has a higher ON/OFF current ratio, which is attributed to the Coulomb blockade effect caused by the Au NPs. The device plays an important role in realizing high-density memory and efficient artificial neuromorphic systems. [ABSTRACT FROM AUTHOR]

Al/PMMA/CS/PMMA/ITO structure devices are fabricated using polymethyl methacrylate (PMMA) and chitosan (CS) as dielectric layer materials. Its electrical characteristics and conductive mechanism are studied using its own physical characteristics to build a memristor true random number generator (TRNG). The generated true random sequence is optimized by a field programmable gate array (FPGA), and the optimized random number sequence is tested by the National Institute of Standards and Technology (NIST) to analyze its randomness. The pipeline structure is introduced to optimize the whole image encryption system, and the optimized random number sequence is used to realize image encryption inside the FPGA. Then, the encrypted image is displayed on a liquid crystal display (LCD) screen to realize random number generation and image encryption of all hardware. Finally, the encrypted image is analyzed. [ABSTRACT FROM AUTHOR]

The speed with which electronic products are updated is continuously increasing. Consequently, since waste electronic products can cause serious environmental pollution, the demand for electronic products made of biological materials is becoming increasingly urgent. Although biological memristors have significant advantages, their electrical characteristics still do not meet the requirements to be used in future nonvolatile memories. Therefore, how to control their electrical characteristics has become a popular topic of research. In this study, tunable biomemristors with an Al/tussah blood (TB)-carbon nanotube (CNT)/indium tin oxide (ITO)/glass structure were fabricated. Such a device exhibits stable bipolar resistance switching behavior and good retention characteristics (104 s). Experimental results show that the ON/OFF current ratio can be effectively controlled by modifying the CNT concentration in the TB-CNT composite film. Multilevel (8 levels, 3 bits per cell) storage capabilities can be achieved in the device by controlling its compliance current in order to achieve high-density storage. The resistance switching behavior originates from the formation and rupture of conductive oxygen vacancy filaments. TB is a promising natural biomaterial in the field of green electronics, and this research could blaze a new trail for the development of biological memory devices. Biomemristors with multilevel resistance states can be used as electronic synapses and are one of the choices for simulating biological synapses. [ABSTRACT FROM AUTHOR]

In this work, a resistive switching memory device was fabricated based on egg protein, a natural biomaterial. The effect of graphene composite on the resistive switching characteristics of the device was investigated. The experimental results show that both pure egg protein and graphene composite devices exhibit bipolar nonvolatile resistive conversion properties. Both devices have good data retention capability. Furthermore, the composite of graphene can effectively improve the device endurance and the consistency of the on-state current distribution of the device. Based on the theory of capture and de-capture of charge carrier, the mechanism of resistive switching is analyzed. The biological egg protein was used as functional layer, and graphene was used as channel medium and trap layer material. Then, the effect of graphene composite on biological egg protein resistance switching memory properties was investigated. The endurance property and the consistency of the on-state current distribution of the device have been effectively improved by the composite of graphene. [ABSTRACT FROM AUTHOR]