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Despite its simple crystal structure, layered boron nitride features a surprisingly complex variety of phonon-assisted luminescence peaks. We present a combined experimental and theoretical study on ultraviolet-light emission in hexagonal and rhombohedral bulk boron nitride crystals. Emission spectra of high-quality samples are measured via cathodoluminescence spectroscopy, displaying characteristic differences between the two polytypes. These differences are explained using a fully first-principles computational technique that takes into account radiative emission from ``indirect'', finite-momentum, excitons via coupling to finite-momentum phonons. We show that the differences in peak positions, number of peaks and relative intensities can be qualitatively and quantitatively explained, once a full integration over all relevant momenta of excitons and phonons is performed., Comment: Main: 6 pages and 4 figures, Supplementary: 6 pages and 7 figures

The GW self-energy may become computationally challenging to evaluate because of frequency and momentum convolutions. These difficulties were recently addressed by the development of the multipole approximation (MPA) and the W-av methods: MPA accurately approximates full-frequency response functions using a small number of poles, while W-av improves the convergence with respect to the k-point sampling in 2D materials. In this work we (i) present a theoretical scheme to combine them, and (ii) apply the newly developed approach to the paradigmatic case of graphene. Our findings show an excellent agreement of the calculated QP band structure with angle resolved photoemission spectroscopy (ARPES) data. Furthermore, the computational efficiency of MPA and W-av allows us to explore the logarithmic renormalization of the Dirac cone. To this aim, we develop an analytical model, derived from a Dirac Hamiltonian, that we parameterize using ab-initio data. The comparison of the models obtained with PPA and MPA results highlights an important role of the dynamical screening in the cone renormalization., Comment: A. Guandalini and D. A. Leon contributed equally to this work

In this work we provide a first principles description of the electronic and optical properties of bilayers C$_3$N, with different stacking motifs AB, AB$'$ and AA$'$. Starting from quasi-particle electronic band-structures, we solve the Bethe Salpeter Equation (BSE) to access the excitonic properties of these bilayers. For all stacking sequences, we see strong optical absorption at energies lower than but close to that of the monolayer. Most relevant, we predict a strong quenching of the low-energy optical absorption, with negligible oscillator strength of low-lying bound excitons. This is a unique phenomenology that does not arise in the monolayer case, nor in other common homo-bilayers. We explain these findings in terms of the small interband dipole matrix elements associated to the valence-conduction transitions involved in these excitons, and discuss them in view of the different stacking motifs., Comment: 13 pages, 8 figures

In this work we perform electron energy-loss spectroscopy (EELS) of freestanding graphene with high energy and momentum resolution to disentangle the quasielastic scattering from the excitation gap of Dirac electrons close to the optical limit. We show the importance of many-body effects on electronic excitations at finite transferred momentum by comparing measured EELS with ab initio calculations at increasing levels of theory. Quasi-particle corrections and excitonic effects are addressed within the GW approximation and Bethe-Salpeter equation, respectively. Both effects are essential in the description of the EEL spectra to obtain a quantitative agreement with experiments, with the position, dispersion, and shape of both the excitation gap and the $\pi$ plasmon being significantly affected by excitonic effects.

The automation of ab initio simulations is essential in view of performing high-throughput (HT) computational screenings oriented to the discovery of novel materials with desired physical properties. In this work, we propose algorithms and implementations that are relevant to extend this approach beyond density functional theory (DFT), in order to automate many-body perturbation theory (MBPT) calculations. Notably, a novel algorithm pursuing the goal of an efficient and robust convergence procedure for GW and BSE simulations is provided, together with its implementation in a fully automated framework. This is accompanied by an automatic GW band interpolation scheme based on maximally-localized Wannier functions, aiming at a reduction of the computational burden of quasiparticle band structures while preserving high accuracy. The proposed developments are validated on a set of representative semiconductor and metallic systems., Comment: 14 pages, 6 figures

The properties of metallic systems with important and structured excitations at low energies, such as Cu, are challenging to describe with simple models like the plasmon pole approximation (PPA), and more accurate and sometimes prohibitive full frequency approaches are usually required. In this paper we propose a numerical approach to $GW$ calculations on metals that takes into account the frequency dependence of the screening via the multipole approximation (MPA), an accurate and efficient alternative to current full-frequency methods that was recently developed and validated for semiconductors and overcomes several limitations of PPA. We now demonstrate that MPA can be successfully extended to metallic systems by optimizing the frequency sampling for this class of materials and introducing a simple method to include the $\mathbf{q}\to 0$ limit of the intra-band contributions. The good agreement between MPA and full frequency results for the calculations of quasi-particle energies, polarizability, self-energy and spectral functions in different metallic systems confirms the accuracy and computational efficiency of the method. Finally, we discuss the physical interpretation of the MPA poles through a comparison with experimental electron energy loss spectra for Cu., Comment: 21 pages

We perform a density functional theory study of the effects of oxygen adsorption on the structural and electronic properties of Gr/Co(0001) and Gr/Co/Ir(111) interfaces. In both interfaces, the graphene-Co distance increases with increasing O concentration. The oxygen intercalation effectively decreases the electronic interaction, preventing the hybridization of graphene states with Co $d$-orbitals, hence (partly) restoring the typical Dirac cone of pristine graphene. In the case of graphene/Co 1ML/Ir(111), which presents a moir\'e pattern, the interplay between the O distribution and the continuous change of the graphene-Co registry can be used to tune graphene corrugation and electronic properties. The computed electronic properties are in very good agreement with previously reported angle resolved photoemission spectroscopy and photoemission electron microscopy measurements for Gr/Co(0001)., Comment: 15 pages, 15 figures

Many-body perturbation theory methods, such as the $G_0W_0$ approximation, are able to accurately predict quasiparticle (QP) properties of several classes of materials. However, the calculation of the QP band structure of two-dimensional (2D) semiconductors is known to require a very dense BZ sampling, due to the sharp $q$-dependence of the dielectric matrix in the long-wavelength limit ($\mathbf{q} \to 0$). In this work, we show how the convergence of the QP corrections of 2D semiconductors with respect to the BZ sampling can be drastically improved, by combining a Monte Carlo integration with an interpolation scheme able to represent the screened potential between the calculated grid points. The method has been validated by computing the band gap of three different prototype monolayer materials: a transition metal dichalcogenide (MoS$_2$), a wide band gap insulator (hBN) and an anisotropic semiconductor (phosphorene). The proposed scheme shows that the convergence of the gap for these three materials up to 50meV is achieved by using $\k$-point grids comparable to those needed by DFT calculations, while keeping the grid uniform.

Monolayer C$_3$N is an emerging two-dimensional indirect band gap semiconductor with interesting mechanical, thermal, and electronic properties. In this work we present a description of C$_3$N electronic and dielectric properties, focusing on the so-called momentum-resolved exciton band structure. Excitation energies and oscillator strengths are computed in order to characterize bright and dark states, and discussed also with respect to the crystal symmetry. Activation of excitonic states is observed for finite transferred momenta: Indeed, we find an active indirect exciton at $\sim$ 0.9 eV, significantly lower than the direct optical gap of 1.96 eV, with excitonic binding energies in the range 0.6-0.9 eV for the lowest states. As for other 2D materials, we find a quasi-linear excitonic dispersion close to $\Gamma$, which however shows a downward convexity related to the indirect band gap of C$_3$N as well as to the dark nature of the involved excitons., Comment: 8 pages; 7 figures

The screening of Coulomb interaction controls many-body physics in carbon nanotubes, as it tunes the range and strength of the force that acts on charge carriers and binds electron-hole pairs into excitons. In doped tubes, the effective Coulomb interaction drives the competition between Luttinger liquid and Wigner crystal, whereas in undoped narrow-gap tubes it dictates the Mott or excitonic nature of the correlated insulator observed at low temperature. Here, by computing the dielectric function of selected narrow- and zero-gap tubes from first principles, we show that the standard effective-mass model of screening systematically underestimates the interaction strength at long wavelength, hence missing the binding of low-energy excitons. The reason is that the model critically lacks the full three-dimensional topology of the tube, being adapted from graphene theory. As ab inito calculations are limited to small tubes, we develop a two-band model dielectric function based on the plane-wave expansion of Bloch states and the exact truncated Coulomb cutoff technique. We demonstrate that our -- computationally cheap -- approach provides the correct screening for narrow-gap tubes of any size and chirality. A striking result is that the screened interaction remains long-ranged even in gapless tubes, as an effect of the microscopic local fields generated by the electrons moving on the curved tube surface. As an application, we show that the effective electron-electron force that is felt at distances relevant to quantum transport experiments is super Coulombic.

The competition between the electron-hole Coulomb attraction and the three-dimensional dielectric screening dictates the optical properties of layered semiconductors. In low-dimensional materials, the equilibrium dielectric environment can be significantly altered by the ultrafast excitation of photo-carriers, leading to renormalized band gap and exciton binding energies. Recently, black phosphorus emerged as a 2D material with strongly layer-dependent electronic properties. Here, we resolve the coherent response of screening to sub-gap photo-excitation in bulk black phosphorus and find that mid-infrared pulses tuned across the band gap drive a transient non-thermal suppression of the dielectric screening, which is revealed by the emergence of the single-layer exciton resonance. Our work exposes the role of interlayer interactions in determining the electronic properties of 2D materials and discloses the possibility of optically manipulate them, which is of great relevance for the engineering of versatile van der Waals low-dimensional materials.

A single monolayer of the layered semimetal WTe2 behaves as a two-dimensional topological insulator, with helical conducting edge modes surrounding a bulk state that becomes insulating at low temperatures. Here we present evidence that the bulk state has a very unusual nature, containing electrons and holes bound by Coulomb attraction (excitons) that spontaneously form in thermal equilibrium. On cooling from room temperature to 100 K the conductivity develops a V-shaped dependence on electrostatic doping, while the chemical potential develops a ~43 meV step at the neutral point. These features are much sharper than is possible in an independent-electron picture, but they can be largely accounted for by positing that some of the electrons and holes are paired in equilibrium. Our calculations from first principles show that the exciton binding energy is larger than 100 meV and the radius as small as 4 nm, explaining their formation at high temperature and doping levels. Below 100 K more strongly insulating behavior is seen, suggesting that a charge-ordered state forms. The observed absence of charge density waves in this state appears surprising within an excitonic insulator picture, but we show that it can be explained by the symmetries of the exciton wave function. Monolayer WTe2 therefore presents an exceptional combination of topological properties and strong correlations over a wide temperature range., Comment: Initial submission. Includes supplementary information. Revised version to appear in Nature Physics