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Bismuth ferrite (BiFeO3) is one of the rare materials that exhibits multiferroic properties already at room-temperature. Therefore, it offers tremendous potential for future technological applications, such as memory and logic. However, a weak magnetoelectric coupling together with the presence of a noncollinear cycloidal spin order restricts various practical applications of BiFeO3. Therefore, there is a large interest in the search for suitable methods for the modulation of the spin cycloid in BiFeO3. By performing neutron diffraction experiments using a triple-axis instrument we have determined that the spin cycloid can be systematically suppressed by applying a high magnetic field of 10 T in a BiFeO3 thin film of about 100 nm grown on a (110)-oriented SrTiO3 substrate. As predicted by previous theoretical calculations, we observed that the required critical magnetic field to suppress the spin cycloid in a BiFeO3 thin film was lower as compared to the previously reported critical magnetic field for bulk BiFeO3 single crystals. Our experiment reveals that the spin cycloid continuously expands with increasing magnetic field before the complete transformation into a G-type antiferromagnetic spin order. Such tuning of the length of the spin cycloid up to a complete suppression offers new functionalities for future technological applications as in spintronics or magnonics.

We report the detailed analysis of temperature dependent neutron diffraction pattern of the Cr$_2$CoAl inverse Heusler alloy and unveil the magnetic structure up to the phase transition as well as its fully compensated ferrimagnetic nature. The Rietveld refinement of the diffraction pattern using the space group I$\bar4${\it m}2 confirm the inverse tetragonal structure over the large temperature range from 100~K to 900~K. The refinement of the magnetic phase considering the wave vector $k=$ (0, 0, 0) reveals the ferrimagnetic nature of the sample below 730$\pm$5~K. This transition temperature is obtained from empirical power law fitting of the variation in the ordered net magnetic moment and intensity of (110) peak as a function of temperature. The spin configuration of the microscopic magnetic structure suggests the nearly fully compensated ferrimagnetic behavior where the magnetic moments of Cr2 are antiparallel with respect to the Cr1, and Co moments. Moreover, the observed anomaly in the thermal expansion and lattice parameters at 730$\pm$5~K suggest that the distortion in crystal structure may play an important role in the magnetic phase transition., Comment: submitted

We investigate the electronic and magnetic properties as well as lattice dynamics and spin-phonon coupling of $\beta$-Na$_{0.33}$V$_2$O$_5$ using temperature-dependent Raman scattering, dc-magnetization and dc-resistivity, x-ray photoemission, and absorption spectroscopy. The Rietveld refinement of XRD pattern with space group C2/m confirms the monoclinic structure. The analysis of temperature-dependent Raman spectra in a temperature range of 13--673~K reveals an anharmonic dependence of the phonon frequency and full width at half maximum, which is accredited to the symmetric phonon decay. However, below about 40 K, the hardening of the phonon frequency beyond anharmonicity is attributed to the spin-phonon coupling. Interestingly, the estimated effective magnetic moment $\mu_{\rm eff}=$ 0.63~$\mu_B$ from the magnetization data manifests a mixed-valence state of V ions in 4+ (18$\pm$1\%) and 5+ (82$\pm$1\%). A similar ratio of V$^{4+}$ to V$^{5+}$ is also observed in the x-ray photoemission and x-ray absorption near-edge spectra and that is found to be consistent with the sample stoichiometry. In addition, the V$^{4+}$ ions are distributed between different vanadium (V1 and V3) sites. The analysis of extended x-ray absorption fine structure at different V-sites gives the corresponding V--O bond lengths, which are utilized in the assignment of Raman modes. Moreover, the temperature-dependent resistivity resembles a semiconducting behavior where the charge carrier transport is facilitated by the band conduction at higher temperatures and via hopping $\le$260~K., Comment: to be published in PRB