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Your search keyword '"Straubinger, Thomas"' showing total 9 results
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9 results on '"Straubinger, Thomas"'

3. Dislocation Climb in AlN Crystals Grown at Low-Temperature Gradients Revealed by 3D X-ray Diffraction Imaging

Author

Straubinger, Thomas, primary, Hartmann, Carsten, additional, Kabukcuoglu, Merve P., additional, Albrecht, Martin, additional, Bickermann, Matthias, additional, Klump, Andrew, additional, Bode, Simon, additional, Hamann, Elias, additional, Haaga, Simon, additional, Hurst, Mathias, additional, Schröder, Thomas, additional, Hänschke, Daniel, additional, and Richter, Carsten, additional

Published
2023
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4. Two inch diameter, highly conducting bulkβ -Ga2O3 single crystals grown by the Czochralski method

Author

Galazka, Zbigniew, primary, Ganschow, Steffen, additional, Seyidov, Palvan, additional, Irmscher, Klaus, additional, Pietsch, Mike, additional, Chou, Ta-Shun, additional, Bin Anooz, Saud, additional, Grueneberg, Raimund, additional, Popp, Andreas, additional, Dittmar, Andrea, additional, Kwasniewski, Albert, additional, Suendermann, Manuela, additional, Klimm, Detlef, additional, Straubinger, Thomas, additional, Schroeder, Thomas, additional, and Bickermann, Matthias, additional

Published
2022
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5. MAP Bayesian modelling combining striatal dopamine receptor occupancy and plasma concentrations to optimize antipsychotic dose regimens in individual patients

Author

Ismail, Mohamed, primary, Straubinger, Thomas, additional, Uchida, Hiroyuki, additional, Graff‐Guerrero, Ariel, additional, Nakajima, Shinichiro, additional, Suzuki, Takefumi, additional, Caravaggio, Fernando, additional, Gerretsen, Philip, additional, Mamo, David, additional, Mulsant, Benoit H., additional, Pollock, Bruce G., additional, and Bies, Robert, additional

Published
2022
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7. Two inch diameter, highly conducting bulk β-Ga2O3 single crystals grown by the Czochralski method.

Author

Galazka, Zbigniew, Ganschow, Steffen, Seyidov, Palvan, Irmscher, Klaus, Pietsch, Mike, Chou, Ta-Shun, Bin Anooz, Saud, Grueneberg, Raimund, Popp, Andreas, Dittmar, Andrea, Kwasniewski, Albert, Suendermann, Manuela, Klimm, Detlef, Straubinger, Thomas, Schroeder, Thomas, and Bickermann, Matthias

Subjects
SINGLE crystals, SURFACE roughness, HOMOEPITAXY, ELECTRONIC equipment, DIAMETER
Abstract

Two inch diameter, highly conducting (Si-doped) bulk β-Ga2O3 single crystals with the cylinder length up to one inch were grown by the Czochralski method. The obtained crystals revealed high structural quality characterized by narrow x-ray rocking curves (FWHM ≤ 25 arc sec) and high surface smoothness (RMS < 200 pm) of the epi-ready wafers. The free electron concentration and Hall mobility at room temperature were in the range of 1.6–9 × 1018 cm−3 and 118 – 52 cm2 V−1 s−1, respectively, which are not affected by a heat treatment at temperatures up to 1000 °C in an oxidizing atmosphere. Temperature-dependent electrical properties of the crystals revealed a degenerated semiconducting state. Both high structural quality and electrical properties make the crystals well suited as substrates for homoepitaxy and electronic device fabrication in the vertical configuration. [ABSTRACT FROM AUTHOR]

Published
2022
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9. Comprehensive assessment of exposure to clozapine in association with side effects among patients with treatment-resistant schizophrenia: a population pharmacokinetic study

Author

Nomura, Nobuyuki, Kitagawa, Kohei, So, Ryuhei, Misawa, Fuminari, Kodama, Masafumi, Takeuchi, Hiroyoshi, Bies, Robert, Straubinger, Thomas, Banker, Christopher, Mizuno, Yuya, Mimura, Masaru, and Uchida, Hiroyuki

Abstract

Background: There have been scarce data on the distribution of clozapine concentrations in comparison with the recommended range (350–600 ng/ml) or their relationship with side effects among patients with treatment-resistant schizophrenia. Furthermore, no studies have assessed the association between side effects and overall exposure to the drug by calculating the 24-h area-under-curve (AUC).Methods: In- and outpatients with schizophrenia or schizoaffective disorder (ICD-10) who were receiving a stable dose of clozapine for ⩾2 weeks were included. Side effects were assessed using the Glasgow antipsychotic side-effects scale for clozapine (GASS-C). Using two collected plasma samples, plasma clozapine and norclozapine concentrations at peak and trough and their 24-h AUC were estimated using population pharmacokinetic models.Results: A total of 108 patients completed the study (mean ± SD age, 43.0 ± 10.1 years; clozapine dose, 357.5 ± 136.9 mg/day); 33 patients (30.6%) showed estimated trough concentrations of clozapine within the recommended range (350–600 ng/ml) whereas the concentrations were higher and lower than this range among 37 (43.5%) and 28 (25.9%) patients (%), respectively. There were no significant correlations between estimated peak or trough concentrations or 24-h AUC of both clozapine or norclozapine, and GASS-C total or individual scores. No significant differences were found between GASS-C total or individual item scores between the patients with estimated trough concentrations of clozapine of >600 ng/ml and the other subjects.Conclusion: The results suggest that clozapine or norclozapine concentrations are not linked directly to the extent of side effects experienced in clozapine-treated patients with treatment-resistant schizophrenia while the cross-sectional study design limits the interpretation of any causal relationships. These findings indicate that side effects associated with clozapine may occur at any dose or concentration.

Published
2021
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