Search

Zinc oxide (ZnO) is a promising candidate for hosting point defects as spin qubits for quantum information applications, due to its wide band gap, low spin-orbit coupling, and dilute nuclear spin environment. Previously shallow impurities in ZnO were mostly proposed for spin qubit candidates, but deep-level spin defect studies in ZnO are rather sparse, which may be ideally decoupled from the host materials for stable operation. In this work, we theoretically search for deep-level point defects in ZnO with optimal physical properties suitable for optically-addressable spin qubits in the solid-state. Using first-principles calculations for the search, we have predicted the Mo vacancy defect in ZnO owning promising spin and optical properties, including spin-triplet ground state, optical transition in the visible to near-infrared range with high quantum yield, allowed intersystem crossings with a large optically-detected magnetic resonance contrast, and long spin $T_2$ and $T_2^*$. Notably, we found the Huang-Rhys factor of the defect to be around 5, which is much smaller than those at 10-30 of the most-known defects in ZnO. We also proposed a new protocol for initializing and reading spin qubits, which could be applied in other systems with forbidden longitudinal intersystem crossing. Finally, we compared the spin decoherence driven by the nuclear spin bath and by paramagnetic impurity baths. We found that the paramagnetic impurities are very effective in causing spin decoherence even with very low concentrations, implying that the spin decoherence in ZnO can be likely dominated by them even after isotopic purification.

Quantum defects are atomic defects in materials that provide resources to construct quantum information devices such as single-photon emitters (SPEs) and spin qubits. Recently, two-dimensional (2D) materials gained prominence as a host of quantum defects with many attractive features derived from their atomically thin and layered material formfactor. In this perspective, we discuss first-principles computational methods and challenges to predict the spin and electronic properties of quantum defects in 2D materials. We focus on the open quantum system nature of the defects and their interaction with external parameters such as electric field, magnetic field, and lattice strain. We also discuss how such prediction and understanding can be used to guide experimental studies, ranging from defect identification to tuning of their spin and optical properties. This perspective provides significant insights into the interplay between the defect, the host material, and the environment, which will be essential in the pursuit of ideal two-dimensional quantum defect platforms., Comment: 37 pages, 5 figures. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Appl. Phys. Lett. 125, 140501 (2024) and may be found at https://doi.org/10.1063/5.0230736

Colour centres of hexagonal boron nitride (h-BN) have been discovered as promising and practical single photon sources due to their high brightness and narrow spectral linewidth at room-temperature. In order to realize h-BN based photonic quantum communications, the ability to electrically activate the single photon fluorescence using an external electric field is crucial. In this work, we show the electrical switching of the photoluminescence from h-BN quantum emitters, enabled by the controllable electron transfer from the nearby charge reservoir. By tuning the Fermi level of graphene next to the h-BN defects, we observed luminescence brightening of a quantum emitter upon the application of a voltage due to the direct charge state manipulation. In addition, the correlation measurement of the single photon sources with the graphene's Raman spectroscopy allows us to extract the exact charge transition level of quantum emitters, providing the information on the crystallographic nature of the defect structure. With the complete on-off switching of emission intensity of h-BN quantum emitters using a voltage, our result paves the way for the van der Waals colour centre based photonic quantum information processing, cryptography and memory applications., Comment: 14 pages, 5 figures

Negatively charged boron vacancies (VB-) in hexagonal boron nitride (h-BN) are a rapidly developing qubit platform in two-dimensional materials for solid-state quantum applications. However, their spin coherence time (T2) is very short, limited to a few microseconds owing to the inherently dense nuclear spin bath of the h-BN host. As the coherence time is one of the most fundamental properties of spin qubits, the short T2 time of VB- could significantly limit its potential as a promising spin qubit candidate. In this study, we theoretically proposed two materials engineering methods, which can substantially extend the T2 time of the VB- spin by four times more than its intrinsic T2. We performed quantum many-body computations by combining density functional theory and cluster correlation expansion and showed that replacing all the boron atoms in h-BN with the 10B isotope leads to the coherence enhancement of the VB- spin by a factor of three. In addition, the T2 time of the VB- can be enhanced by a factor of 1.3 by inducing a curvature around VB-. Herein, we elucidate that the curvature-induced inhomogeneous strain creates spatially varying quadrupole nuclear interactions, which effectively suppress the nuclear spin flip-flop dynamics in the bath. Importantly, we find that the combination of isotopic enrichment and strain engineering can maximize the VB- T2, yielding 207.2 and 161.9 {\mu}s for single- and multi-layer h-10BN, respectively. Furthermore, our results can be applied to any spin qubit in h-BN, strengthening their potential as material platforms to realize high-precision quantum sensors, quantum spin registers, and atomically thin quantum magnets., Comment: 28 pages, 6 figures, 1 table, 72 references Erratum added at the end of the conclusion section