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Flat-band physics of Moiré superlattices, originally discovered in the celebrated twisted bilayer graphene, have recently been intensively explored in multilayer graphene systems that can be further controlled by electric field. In this work, we experimentally find the evidence of correlated insulators at half filling of the electron moiré band of twisted monolayer-trilayer graphene with a twist angle around 1.2 degrees. Van Hove singularity (VHS), manifested as enhanced resistance and zero Hall voltage, is observed to be distinct in conduction and valence flat bands. It also depends on the direction and magnitude of displacement fields, consistent with the asymmetric crystal structure. While the resistance ridges at VHS can be enhanced by magnetic fields, when they cross commensurate fillings of the moiré superlattice in the conduction band, the enhancement is so strong that signatures of correlated insulator appear, which may further develop into an energy gap depending on the correlation strength. At last, Fermi velocity derived from temperature coefficients of resistivity is compared between conduction and valence bands with different displacement fields. It is found that electronic correlation has a negative dependence on Fermi velocity, which in turn could be used to quantify the correlation strength.

In transition metal dichalcogenides (TMDs), Ising superconductivity with an antisymmetric spin texture on the Fermi surface has attracted wide interest due to the exotic pairing and topological properties. However, it is not clear whether the

Highly controlled electronic correlation in twisted graphene heterostructures has gained enormous research interests recently, encouraging exploration in a wide range of moiré superlattices beyond the celebrated twisted bilayer graphene. Here we characterize correlated states in an alternating twisted Bernal bilayer–monolayer–monolayer graphene of ∼ 1.74°, and find that both van Hove singularities and multiple correlated states are asymmetrically tuned by displacement fields. In particular, when one electron per moiré unit cell is occupied in the electron-side flat band, or the hole-side flat band (i.e., three holes per moiré unit cell), the correlated peaks are found to counterintuitively grow with heating and maximize around 20 K – a signature of Pomeranchuk effect. Our multilayer heterostructure opens more opportunities to engineer complicated systems for investigating correlated phenomena.