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Controlling semiconductor photocatalysts by doping rare-earth ions is an effective strategy to improve photocatalytic performance. Simple solvothermal and calcination methods were used to prepare La

Defect construction and rare earth doping are the linchpins to completing the target of partial electronic regulation. In Er

It is a useful strategy to use a solid electronic mediator with good conductivity to assist the separation of semiconductor photo-induced electron-hole pairs and the redox of semiconductor materials. In order to construct a photocatalyst for more efficient photocatalytic degradation of antibiotics, a simple hydrothermal and precipitation method was used to construct the Ag-AgBr/Bi

A dual Z-scheme carbon-bridged g-C3N4/BiOI-Bi2O3 photocatalyst were synthesized by simple solvothermal and calcination methods. The physical and chemical properties of prepared samples were explored via a series of characterization and Density Functional Theory (DFT) calculations. The formation mechanism of the composite photocatalyst was systematically studied and the formation process was simulated. Under the irradiation of visible light, 10% carbon-bridged g-C3N4/BiOI-Bi2O3 exhibited the best photocatalytic performance. And the kinetics reaction model was followed pseudo-first-order kinetics. Moreover, the possible TC degradation pathways were established based on LC-MS. The enhanced photocatalytic activity was mainly attributed to the dual Z-scheme heterojunction formed by carbon-bridged g-C3N4 deposition on the surface of Bi2O3 and BiOI and a higher charge transfer rate of carbon-bridged g-C3N4, which effectively promoted the separation and transfer of electron-hole pairs. The trapping experiments were carried out to further explore its photocatalytic mechanism. This work provided an in-depth understanding of g-C3N4 and bismuth-based catalysts.