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Laser texturing seems to be a promising technique for reducing bacterial adhesion on titanium implant surfaces. This work aims to demonstrate the possibility of obtaining a functionally orientated surface of titanium implant elements with a specific architecture with specific bacteriological and photocatalytic properties. Femtosecond laser-generated surface structures, such as laser-induced periodic surface structures (LIPSS, wrinkles), grooves, and spikes on titanium, have been characterised by XRD, Raman spectroscopy, and scanning electron microscopy (SEM). The photocatalytic activity of the titanium surfaces produced was tested based on the degradation effect of methylene blue (MB). The correlation between the photocatalytic activity of TiO 2 coatings and their morphology and structure has been analysed. Features related to the size, shape, and distribution of the roughness patterns were found to influence the adhesion of the bacterial strain on different surfaces. On the laser-structurised surface, the adhesion of Escherichia coli bacteria were reduced by 80% compared to an untreated reference surface., (© 2024. The Author(s).)

The nanohardness and Young's modulus of Pb 1- x Cd x Te single crystals prepared by the self-selecting vapor growth (SSVG) method and thick, MBE-grown layers with a total Cd content of up to 7% metal atoms were studied using the nanoindentation technique; the nanohardness and Young's modulus were calculated by the Oliver and Pharr method. Significant hardening of SSVG crystals with increasing number of Cd atoms replacing Pb atoms in the formed solid solution was observed, and low anisotropy of the nanohardness and Young's modulus were found. The CdTe solubility limit in the solid solution grown using an MBE equal to 2.1% was demonstrated; even for the significantly higher total Cd concentration in the layer, the possible presence of precipitates was not detected. Significant differences were found for both the energy of elastic crystal deformation and Young's modulus determined for samples grown using the two methods. An increase in nanohardness with an increase in the number of Cd atoms outside the cation sublattice was shown. The different ratios of hardening mechanisms acting simultaneously in the analyzed crystals in various ranges of Cd concentrations were demonstrated and discussed. The observed effects were attributed to the much higher concentration of point defects in MBE-grown layers than in SSVG crystals, in particular, the interstitial Cd-Te vacancy complexes effectively hampering nucleation and propagation of dislocations in the former case., Competing Interests: The authors declare no competing financial interest., (© 2023 The Authors. Published by American Chemical Society.)

Biomaterial engineering approaches involve using a combination of miscellaneous bioactive molecules which may promote cell proliferation and, thus, form a scaffold with the environment that favors the regeneration process. Chitosan, a naturally occurring biodegradable polymer, possess some essential features, i.e., biodegradability, biocompatibility, and in the solid phase good porosity, which may contribute to promote cell adhesion. Moreover, doping of the materials with other biocompounds will create a unique and multifunctional scaffold that will be useful in regenerative medicine. This study is focused on the manufacturing and characterization of composite materials based on chitosan, hydroxyapatite, and riboflavin. The resulting films were fabricated by the casting/solvent evaporation method. Morphological and spectroscopy analyses of the films revealed a porous structure and an interconnection between chitosan and apatite. The composite material showed an inhibitory effect on Staphylococcus aureus and exhibited higher antioxidant activity compared to pure chitosan. In vitro studies on riboflavin showed increased cell proliferation and migration of fibroblasts and osteosarcoma cells, thus demonstrating their potential for bone tissue engineering applications., (© 2023. Springer Nature Limited.)

According to increasing demand for energy, PV cells seem to be one of the best answers for human needs. Considering features such as availability, low production costs, high stability, etc., metal oxide semiconductors (MOS) are a focus of attention for many scientists. Amongst MOS, TiO 2 and Cu x O seem to be promising materials for obtaining an effective photoconversion effect. In this paper, specific investigation, aimed at the manufacturing of the complete photovoltaic structure based on this concept is described in detail. A set of samples manufactured by DC magnetron sputtering, with various process parameters, is characterized by morphology comparison, layer structure and material composition investigation, and finally by the obtained photovoltaic parameters. Based on SEM studies, it was established that the films are deposited uniformly and complete their formation; without clearly defined faces, the conglomerates of the film grow individually. These are areas with a uniform structure and orientation of atoms. The sizes of conglomerates are in a normal direction range from 20 to 530 nm and increase with film thickness. The film thickness was in the range from 318 to 1654 nm, respectively. The I-V study confirms the photovoltaic behavior of thin film solar cells. The open-circuit voltage (V oc ) and short-circuit current density (J sc ) values of the photovoltaic devices ranged from 1.5 to 300 mV and from 0.45 to 7.26 µA/cm 3 , respectively, which corresponds to the maximum efficiency at the level of 0.01%. Specific analysis of the junction operation on the basis of characteristics flow, R s , and R sh values is delivered.

We demonstrate strain-balanced InAs/AlSb type-II superlattices (T2SL) grown on GaSb substrates employing two kinds of interfaces (IFs): AlAs-like IF and InSb-like IF. The structures are obtained by molecular beam epitaxy (MBE) for effective strain management, simplified growth scheme, improved material crystalline quality, and improved surface quality. The minimal strain T2SL versus GaSb substrate can be achieved by a special shutters sequence during MBE growth that leads to the formation of both interfaces. The obtained minimal mismatches of the lattice constants is smaller than that reported in the literature. The in-plane compressive strain of 60-period InAs/AlSb T2SL 7ML/6ML and 6ML/5ML was completely balanced by the applied IFs, which is confirmed by the HRXRD measurements. The results of the Raman spectroscopy (measured along the direction of growth) and surface analyses (AFM and Nomarski microscopy) of the investigated structures are also presented. Such InAs/AlSb T2SL can be used as material for a detector in the MIR range and, e.g., as a bottom n-contact layer as a relaxation region for a tuned interband cascade infrared photodetector.

In this study, titanium dioxide/copper oxide thin-film solar cells were prepared using the reactive direct-current magnetron sputtering technique. The influence of the deposition time of the top Cu contact layer on the structural and electrical properties of photovoltaic devices was analyzed. The structural and morphological characterization of the TiO 2 /CuO/Cu 2 O solar cells was fully studied using X-ray diffraction (XRD), scanning electron microscopy (SEM), and current-voltage (I-V) characteristics. Additionally, using van der Pauw sample geometries, the electrical properties of the titanium dioxide and copper oxide layers were investigated. From the XRD study, solar cells were observed in cubic (Cu 2 O), monoclinic (CuO), and Ti 3 O 5 phases. In addition, the crystallite size and dislocation density for copper oxide layers were calculated. Basic morphological parameters (thickness, mechanism of growth, and composition of elements) were analyzed via scanning electron microscopy. The thicknesses of the titanium dioxide and copper oxide layers were in the range of 43-55 nm and 806-1223 nm, respectively. Furthermore, the mechanism of growth and the basic composition of the elements of layers were analyzed. The I-V characteristic curve confirms the photovoltaic behavior of two titanium dioxide/copper oxide thin-film structures. The values of short-circuit current density (J sc ) and open-circuit voltage (V oc ) of the solar cells were: 4.0 ± 0.8 µA/cm 2 , 16.0 ± 4.8 mV and 0.43 ± 0.61 µA/cm 2 , 0.54 ± 0.31 mV, respectively. In addition, the authors presented the values of I sc , P max , FF, and R sh . Finally, the resistivity, carrier concentration, and mobility are reported for selected layers with values reflecting the current literature.