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Abstract We present a comprehensive study of buckled honeycomb germanene functionalized with alternately bonded side groups hydroxyl (–H), methyl (–CH3) and trifluoro methyl (–CF3). By means of most modern theoretical and computational methods we determine the atomic geometries versus the functionalizing groups. The quasiparticle excitation effects on the electronic structure are taken into account by means of exchange-correlation treatment within the GW framework. The Bethe–Salpeter equation is solved ab initio to derive optical spectra including excitonic and quasiparticle effects. Band edge excitons are investigated in detail. The binding properties are compared with those resulting from model studies. The functionalization leads to significantly modified band structures compared with pristine germanene. The Dirac bands near the K point are destroyed and direct gaps appear at the $$\Gamma$$ point. Together with the many-body effects, quasiparticle gaps of 2.3, 1.8 or 1.0 eV result for –H, –CH3 and –CF3 functionalization. Totally different absorption spectra are found for in-plane and out-of-plane light polarization. Strongly bound excitons are visible below the quasiparticle band edge with binding energies of about 0.5, 0.4 or 0.3 eV. The nature of these band-gap excitons is investigated via their wave function, the contribution of various interband combinations and the dipole selection rules.

Abstract Graphene-covered hexagonal SiC substrates have been frequently discussed to be appropriate starting points for epitaxial overlayers of Xenes, such as plumbene, or even their deposition as intercalates between graphene and SiC. Here, we investigate, within density functional theory, the plumbene deposition for various layer orderings and substrate terminations. By means of total energy studies we demonstrate the favorization of the intercalation versus the epitaxy for both C-terminated and Si-terminated 4H-SiC substrates. These results are explained in terms of chemical bonding and by means of layer-resolved projected band structures. Our results are compared with available experimental findings.

Abstract The discovery of twisted bilayer graphene with tunable superconductivity has diverted great focus at the world of twisted van der Waals heterostructures. Here we propose a paradigm for bilayer materials, where covalent bonding replaces the van der Waals interaction between the layers. On the example of germanene-stanene bilayer, we show that such systems demonstrate fascinating topological properties and manifest giant capacitance effects of the order of C = 102 μ F as well as dipole-like charge densities of q = 1 − 2 × 10−4 μ C cm−2, showing promise for 2D ferroelectricity. The observed unique behaviour is closely linked to transverse strain-induced buckling deformations at the bilayer/substrate interface. In alternative GeSn bilayer structures with low twist angles the strain distortions trigger rich topological defect physics. We propose that the GeSn bilayer topology may be switched locally by a substrate-strain-induced electric fields. We demonstrate an approach to fabricate covalent bilayer materials, holding vast possibilities to transform applications technologies across solar, energy and optoelectronic sectors.

Abstract Van der Waals (vdW) epitaxial growth of large-area and stable two-dimensional (2D) materials of high structural quality on crystalline substrates is crucial for the development of novel device technologies. 2D gallium monochalcogenides with low in-plane symmetry stand out among the layered semiconductor materials family for next-generation optoelectronic and energy conversion applications. Here, we demonstrate the formation of large-area, single crystal and optically active 2D monoclinic gallium telluride (m-GaTe) on silicon substrate via rapid thermal annealing induced phase transformation of vdW epitaxial metastable hexagonal gallium telluride (h-GaTe). Stabilization of multilayer h-GaTe on Si occurs due to the role of the first layer symmetry together with efficient GaTe surface passivation. Moreover, we show that the phase transformation of h-GaTe to m-GaTe is accompanied by the strain relaxation between Si substrate and GaTe. This work opens the way to the fabrication of single-crystal 2D anisotropic semiconductors on standard crystalline wafers that are difficult to be obtained by epitaxial methods.

We report on DFT-TDDFT studies of the structural, electronic and vibrational properties of B24N24 nanocapsules and the effect of encapsulation of homonuclear diatomic halogens (Cl2, Br2 and I2) and chalcogens (S2 and Se2) on the interaction of the B24N24 nanocapsules with the divalent magnesium cation. In particular, to foretell whether these BN nanostructures could be proper negative electrodes for magnesium-ion batteries, the structural, vibrational and electronic properties, as well as the interaction energy and the cell voltage, which is important for applications, have been computed for each system, highlighting their differences and similarities. The encapsulation of halogen and chalcogen diatomic molecules increases the cell voltage, with an effect enhanced down groups 16 and 17 of the periodic table, leading to better performing anodes and fulfilling a remarkable cell voltage of 3.61 V for the iodine-encapsulated system.

We present a comprehensive study of the structural and electronic properties of a graphene/phosphorene (G/P) heterostructure in the framework of density functional theory, including van der Waals interaction in the exchange–correlation functional. While the G(4 × 1)/P(3 × 1) superlattice usually used in the literature is subject to a strain as high as about 7%, the in-plane strain could be drastically reduced to under 1% in the G(4 × 13)/P(3 × 12) heterostructure investigated here. Adapting the lattice constants of the rectangular lattices, the equilibrium configuration in the xy plane of phosphorene relative to the graphene layer is optimized. This results in an equilibrium interlayer distance of 3.5 Å and a binding energy per carbon atom of 37 meV, confirming the presence of weak van der Waals interaction between the graphene and the phosphorene layers. The electronic properties of the heterostructure are evaluated under different values of interlayer distance, strain and applied vertical electric field. We demonstrate that G/P heterostructures form an n-type Schottky contact, which can be transformed into p-type under external perturbations. These findings, together with the possibility to control the gaps and barrier heights, suggest that G/P heterostructures are promising for novel applications in electronics and may open a new avenue for the realization of innovative optoelectronic devices.

The vibrational properties of molecular crystals in the terahertz range are controlled by the interplay of intermolecular and intramolecular interactions. The resulting delocalized normal modes span a substantial number of atoms within the unit cell of the molecular crystals and cannot be easily attributed to a specific stretching or bending mode. Several compounds were studied to understand the nature of normal modes. However, a systematic analysis of saccharides is still missing. This study investigates the terahertz vibrational properties of various saccharides, including glucose, galactose, lactose, cellobiose, and cellulose. The terahertz spectra were measured using terahertz time-domain spectroscopy. The samples were carefully characterized, and the residual Fabry–Perot oscillations were removed to obtain the absorption coefficient and refractive index of the saccharides. Density functional theory simulations were used to obtain theoretical terahertz spectra, considering hydrogen bonding interactions with an enhanced version of the van der Waals non-local density functional. The results revealed differences in low-energy vibrational modes frequencies, influenced by molecular structure properties, hydrogen bonding networks, and water content. Librations and internal vibrations were identified as dominant dynamics in the saccharides, with significant mixing between intermolecular and intramolecular vibrations. This comprehensive analysis sheds light on the vibrational behavior of saccharides in the terahertz range.

Using a variational approach, the binding energies $E_b$ of the lowest bound excitons in Xenes under varying electric field are investigated. The internal exciton motion is described both by Dirac electron dispersion and in effective-mass approximation, while the screened electron-hole attraction is modeled by a Rytova-Keldysh potential with a 2D electronic polarizability $\alpha_{2D}$. The most important parameters as spin-orbit-induced gap $E_g$, Fermi velocity $v_F$ and $\alpha_{2D}$ are taken from ab initio density functional theory calculations. In addition, $\alpha_{2D}$ is approximated in two different ways. The relation of $E_b$ and $E_g$ is ruled by the screening. The existence of an excitonic insulator phase with $E_b>E_g$ sensitively depends on the chosen $\alpha_{2D}$. The values of $E_g$ and $\alpha_{2D}$ are strongly modified by a vertical external electric bias $U$, which defines a transition from the topological into a trivial insulator at $U=E_g/2$, with the exception of plumbene. Within the Dirac approximation, but also within the effective mass description of the kinetic energy, the treatment of screening dominates the appearance or non-appearance of an excitonic insulator phase. Gating does not change the results: the prediction done at zero electric field is confirmed when a vertical electric field is applied. Finally, Many-Body perturbation theory approaches based on the Green's function method, applied to stanene, confirm the absence of an excitonic insulator phase, thus validating our results obtained by ab initio modeling of $\alpha_{2D}$.

In this work, ab initio Density Functional Theory calculations are performed to investigate the evolution of the electronic and optical properties of 2D Tellurium—called Tellurene—for three different allotropic forms (α-, β- and γ-phase), as a function of the number of layers. We estimate the exciton binding energies and radii of the studied systems, using a 2D analytical model. Our results point out that these quantities are strongly dependent on the allotropic form, as well as on the number of layers. Remarkably, we show that the adopted method is suitable for reliably predicting, also in the case of Tellurene, the exciton binding energy, without the need of computationally demanding calculations, possibly suggesting interesting insights into the features of the system. Finally, we inspect the nature of the mechanisms ruling the interaction of neighbouring Tellurium atoms helical chains (characteristic of the bulk and α-phase crystal structures). We show that the interaction between helical chains is strong and cannot be explained by solely considering the van der Waals interaction.

In this work, we study the structural and electronic properties of boron nitride bilayers sandwiched between graphene sheets. Different stacking, twist angles, doping, as well as an applied external gate voltage, are reported to induce important changes in the electronic band structure near the Fermi level. Small electronic lateral gaps of the order of few meV can appear near the Dirac points K. We further discuss how the bandstructures change applying a perpendicular external electric field, showing how its application lifts the degeneracy of the Dirac cones and, in the twisted case, moves their crossing points away from the Fermi energy. Then, we consider the possibility of co-doping, in an asymmetric way, the two external graphene layers. This is a situation that could be realized in heterostructures deposited on a substrate. We show that the co-doping acts as an effective external electric field, breaking the Dirac cones degeneracy. Finally, our work demonstrates how, by playing with field strength and p-n co-doping, it is possible to tune the small lateral gaps, pointing towards a possible application of C/BN sandwich structures as nano-optical terahertz devices.

Nonlinear optical frequency conversion, where optical fields interact with a nonlinear medium to generate new frequencies, is a key phenomenon in modern photonic systems. However, a major challenge with these techniques lies in the difficulty of tuning the nonlinear electrical susceptibilities that drive such effects in a given material. As a result, dynamic control of optical nonlinearities has remained largely confined to research laboratories, limiting its practical use as a spectroscopic tool. In this work, we aim to advance the development of devices with tunable nonlinear responses by exploring two potential mechanisms for electrically manipulating second-order optical nonlinearity in two-dimensional materials. Specifically, we consider two configurations: in the first, the material does not inherently exhibit second-harmonic generation (SHG), but this response is induced by an external field; in the second, an external field induces doping in a material that already exhibits SHG, altering the intensity of the nonlinear signal. In this work, we have studied these two configurations using a real-time ab-initio approach under an out-of-plane external field and including the effects of doping-induced variations in the screened electron-electron interaction. We then discuss the limitations of current computational methods and compare our results with experimental measurements.