1. Large unidirectional spin Hall magnetoresistance in FeNi/Pt/Bi2Se3 trilayers by Pt interfacial engineering.
- Author
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Zhang, Qi, Tao, Kun, Jia, Chenglong, Xu, Guofu, Chai, Guozhi, Zuo, Yalu, Cui, Baoshan, Yang, Dezheng, Xue, Desheng, and Xi, Li
- Subjects
SURFACE states ,MAGNETORESISTANCE ,HIGH temperatures ,TEMPERATURE effect ,SIGNALS & signaling - Abstract
Unidirectional spin Hall magnetoresistance (USMR) has emerged as a promising candidate for magnetoresistive random-access memory (MRAM) technology. However, the realization of high signal-to-noise output signal in USMR devices has remained a challenge, primarily due to the limited USMR effect at room temperature. In this study, we report a large USMR effect in FeNi/Pt/Bi₂Se₃ trilayers through interfacial engineering with Pt to optimize the spin current transmission efficiency and electron-magnon scattering. Our devices exhibit a USMR value that is an order of magnitude higher than previously reported systems, reaching 30.6 ppm/MA/cm² at room temperature. First-principles calculations and experimental observations suggest that the Pt layer not only preserves the spin-momentum locked topological surface states in Bi₂Se₃ at the Fermi-level but also generates additional Rashba surface states within the Pt itself to enhance the effective SOT efficiency. Furthermore, we demonstrate that the two-terminal USMR-MRAM devices show robust output performance with 2
nd harmonic resistance variation around 0.11 Ω/mA. Remarkably, the performance of these devices further improves at elevated temperatures, highlighting their potential for reliable operation in a wide range of environmental conditions. Our findings pave the way for future advancements in high-performance, energy-efficient spintronic memory devices. Unidirectional spin Hall magnetoresistance refers to an asymmetric resistance response, which allows for the readout of the magnetic state from two terminal devices. Here, Zhang et al demonstrate a large unidirectional spin hall magnetoresistance FeNi/Pt/Bi₂Se₃ trilayers and present a robust random-access magnetoresistance device. [ABSTRACT FROM AUTHOR]- Published
- 2024
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