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Abstract A comprehensive study of the optical properties of CsPbBr3 perovskite multiple quantum wells (MQW) with organic barrier layers is presented. Quantum confinement is observed by a blue‐shift in absorption and emission spectra with decreasing well width and agrees well with simulations of the confinement energies. A large increase of emission intensity with thinner layers is observed, with a photoluminescence quantum yield up to 32 times higher than that of bulk layers. Amplified spontaneous emission (ASE) measurements show very low thresholds down to 7.3 µJ cm−2 for a perovskite thickness of 8.7 nm, significantly lower than previously observed for CsPbBr3 thin‐films. With their increased photoluminescence efficiency and low ASE thresholds, MQW structures with CsPbBr3 are excellent candidates for high‐efficiency perovskite‐based LEDs and lasers.

Recent progress on perovskite lasers has shown the large potential for such materials to become a basis for commercially available microlasers in the near feature. Herein, distributed feedback (DFB) lasers based on vacuum‐processed CsPbBr 3 are investigated. The expansion of the DFB structure from 1D to 2D suppresses parasitic amplified spontaneous emission (ASE), resulting in the multiple‐time‐enhanced lasing output. Further, the photoluminescence and lasing behavior of 1D and 2D DFB structures are explored through the k‐space imaging analysis.

Metal halide perovskites are the first solution processed semiconductors that can compete in their functionality with conventional semiconductors, such as silicon. Over the past several years, perovskite semiconductors have reported breakthroughs in various optoelectronic devices, such as solar cells, photodetectors, light emitting and memory devices, and so on. Until now, perovskite semiconductors face challenges regarding their stability, reproducibility, and toxicity. In this Roadmap, we combine the expertise of chemistry, physics, and device engineering from leading experts in the perovskite research community to focus on the fundamental material properties, the fabrication methods, characterization and photophysical properties, perovskite devices, and current challenges in this field. We develop a comprehensive overview of the current state-of-the-art and offer readers an informed perspective of where this field is heading and what challenges we have to overcome to get to successful commercialization.

Considering the demand for low temperature bonding in 3D integration and packaging of microelectronic or micromechanical components, this paper presents the development and application of an innovative inductive heating system using micro coils for rapid Cu-Sn solid-liquid interdiffusion (SLID) bonding at chip-level. The design and optimization of the micro coil as well as the analysis of the heating process were carried out by means of finite element method (FEM). The micro coil is a composite material of an aluminum nitride (AlN) carrier substrate and embedded metallic coil conductors. The conductive coil geometry is generated by electroplating of 500 µm thick copper into the AlN carrier. By using the aforementioned micro coil for inductive Cu-Sn SLID bonding, a complete transformation into the thermodynamic stable ε-phase Cu3Sn with an average shear strength of 45.1 N/mm2 could be achieved in 130 s by applying a bond pressure of 3 MPa. In comparison to conventional bonding methods using conduction-based global heating, the presented inductive bonding approach is characterized by combining very high heating rates of about 180 K/s as well as localized heating and efficient cooling of the bond structures. In future, the technology will open new opportunities in the field of wafer-level bonding.

This paper presents an experimental electro-thermo-mechanical simulation of high-frequency induction (HFI) welding to investigate the effect of temperature and contact normal stress on the weld seam quality. Therefore welding experiments at different temperatures and contact pressures are performed using flat specimens of 34MnB5 steel sheet. In order to characterize the weld seam strength of the welded specimens, tensile and bending tests are performed. To obtain a relative weld seam strength, the bending specimens were additionally hardened prior to testing. With the hardened specimens, it can be shown that the weld seam strength increases with increasing temperature and contact normal stress until a kind of plateau is formed where the weld seam strength remains almost constant. In addition to mechanical testing, the influence of the investigated process parameters on the weld seam microstructure is studied metallographically using light optical microscopy, scanning electron microscopy, EBSD and hardness measurements. It is shown that the weld seam strength is related to the amount of oxides in the bonding line.