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Your search keyword '"Mandorlo Fabien"' showing total 11 results
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11 results on '"Mandorlo Fabien"'

1. Critical materials and PV cells interconnection

Author

Perelman Antoine, Barth Vincent, Mandorlo Fabien, and Voroshazi Eszter

Subjects
critical material, photovoltaic module, architecture, Renewable energy sources, TJ807-830
Abstract

Assessment of the critical nature of a material for an application is a relevant notion to anticipate supply issues for an application and a territory. To establish a list of the critical materials, we have developed an approach taking into account geological scarcity, deployment logistics and societal aspects. This article aims to apply this framework to photovoltaic (PV) module interconnection. We draw the conclusion that even if concerns of critical materials are focused on Silver (Ag) scarcity (on metallization part), interconnection materials such as Tin (Sn) and Bismuth (Bi) are even more critical, mainly due to their mostly dispersive uses. This leads us to a standard module conception analysis and emphasizes the interest of improving a more modularized PV module architecture in order to improve high value recycling. An example of such a conception is given with NICE concept. Another example offering a way to optimize metallization conception toward a less consuming pattern is also described.

Published
2024
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2. NEUROPULS: NEUROmorphic energy-efficient secure accelerators based on Phase change materials aUgmented siLicon photonicS

Author

Pavanello, Fabio, Marchand, Cedric, O'Connor, Ian, Orobtchouk, Regis, Mandorlo, Fabien, Letartre, Xavier, Cueff, Sebastien, Vatajelu, Elena Ioana, Di Natale, Giorgio, Cluzel, Benoit, Coillet, Aurelien, Charbonnier, Benoit, Noe, Pierre, Kavan, Frantisek, Zoldak, Martin, Szaj, Michal, Bienstman, Peter, Van Vaerenbergh, Thomas, Ruhrmair, Ulrich, Flores, Paulo, Silva, Luis Guerra e, Chaves, Ricardo, Silveira, Luis-Miguel, Ceccato, Mariano, Gizopoulos, Dimitris, Papadimitriou, George, Karakostas, Vasileios, Brando, Axel, Cazorla, Francisco J., Canal, Ramon, Closas, Pau, Gusi-Amigo, Adria, Crovetti, Paolo, Carpegna, Alessio, Carmona, Tzamn Melendez, Di Carlo, Stefano, and Savino, Alessandro

Subjects
Computer Science - Hardware Architecture, Electrical Engineering and Systems Science - Signal Processing
Abstract

This special session paper introduces the Horizon Europe NEUROPULS project, which targets the development of secure and energy-efficient RISC-V interfaced neuromorphic accelerators using augmented silicon photonics technology. Our approach aims to develop an augmented silicon photonics platform, an FPGA-powered RISC-V-connected computing platform, and a complete simulation platform to demonstrate the neuromorphic accelerator capabilities. In particular, their main advantages and limitations will be addressed concerning the underpinning technology for each platform. Then, we will discuss three targeted use cases for edge-computing applications: Global National Satellite System (GNSS) anti-jamming, autonomous driving, and anomaly detection in edge devices. Finally, we will address the reliability and security aspects of the stand-alone accelerator implementation and the project use cases., Comment: 10 pages, 2 figures, conference

Published
2023
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4. Shallow Trench Isolation Patterning to Improve Photon Detection Probability of Single-Photon Avalanche Diodes Integrated in FD-SOI CMOS Technology.

Author

Gao, Shaochen, Vu, Duc-Tung, Cazimajou, Thibauld, Pittet, Patrick, Le Berre, Martine, Dolatpoor Lakeh, Mohammadreza, Mandorlo, Fabien, Orobtchouk, Régis, Schell, Jean-Baptiste, Kammerer, Jean-Baptiste, Cathelin, Andreia, Golanski, Dominique, Uhring, Wilfried, and Calmon, Francis

Subjects
AVALANCHE diodes, TRENCHES, PHOTONS, SILICON films, PROBABILITY theory
Abstract

The integration of Single-Photon Avalanche Diodes (SPADs) in CMOS Fully Depleted Silicon-On-Insulator (FD-SOI) technology under a buried oxide (BOX) layer and a silicon film containing transistors makes it possible to realize a 3D SPAD at the chip level. In our study, a nanostructurated layer created by an optimized arrangement of Shallow Trench Isolation (STI) above the photosensitive zone generates constructive interferences and consequently an increase in the light sensitivity in the frontside illumination. A simulation methodology is presented that couples electrical and optical data in order to optimize the STI trenches (size and period) and to estimate the Photon Detection Probability (PDP) gain. Then, a test chip was designed, manufactured, and characterized, demonstrating the PDP improvement due to the STI nanostructuring while maintaining a comparable Dark Count Rate (DCR). [ABSTRACT FROM AUTHOR]

Published
2024
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6. NEUROPULS: NEUROmorphic energy-efficient secure accelerators based on Phase change materials aUgmented siLicon photonicS

Author

Pavanello, Fabio, primary, Marchand, Cedric, additional, O’Connor, Ian, additional, Orobtchouk, Régis, additional, Mandorlo, Fabien, additional, Letartre, Xavier, additional, Cueff, Sebastien, additional, Vatajelu, Elena Ioana, additional, Di Natale, Giorgio, additional, Cluzel, Benot, additional, Coillet, Aurelien, additional, Charbonnier, Benoit, additional, Noé, Pierre, additional, Kavan, Frantisek, additional, Zoldak, Martin, additional, Szaj, Michal, additional, Bienstman, Peter, additional, Van Vaerenbergh, Thomas, additional, Ruhrmair, Ulrich, additional, Flores, Paulo, additional, e Silva, Luis Guerra, additional, Chaves, Ricardo, additional, Silveira, Luis-Miguel, additional, Ceccato, Mariano, additional, Gizopoulos, Dimitris, additional, Papadimitriou, George, additional, Karakostas, Vasileios, additional, Brando, Axel, additional, Cazorla, Francisco J., additional, Canal, Ramon, additional, Closas, Pau, additional, Gusi-Amigó, Adriá, additional, Crovetti, Paolo, additional, Carpegna, Alessio, additional, Carmona, Tzamn Melendez, additional, Di Carlo, Stefano, additional, and Savino, Alessandro, additional

Published
2023
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7. Correlations between DCR and PDP of SPAD integrated in a 28 nm FD-SOI CMOS Technology

Author

Gao, Shaochen Gao, Issartel, Dylan, Dolatpoor Lakeh, Mohammadreza, Mandorlo, Fabien, Orobtchouk, Régis, Kammerer, Jean-Baptiste, Cathelin, Andreia, Golanski, Dominique, Uhring, Wilfried, Calmon, Francis, Laboratoire des sciences de l'ingénieur, de l'informatique et de l'imagerie (ICube), École Nationale du Génie de l'Eau et de l'Environnement de Strasbourg (ENGEES)-Université de Strasbourg (UNISTRA)-Institut National des Sciences Appliquées - Strasbourg (INSA Strasbourg), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut National de Recherche en Informatique et en Automatique (Inria)-Les Hôpitaux Universitaires de Strasbourg (HUS)-Centre National de la Recherche Scientifique (CNRS)-Matériaux et Nanosciences Grand-Est (MNGE), Université de Strasbourg (UNISTRA)-Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-Institut National de la Santé et de la Recherche Médicale (INSERM)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Université de Strasbourg (UNISTRA)-Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-Institut National de la Santé et de la Recherche Médicale (INSERM)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Réseau nanophotonique et optique, and Université de Strasbourg (UNISTRA)-Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-Centre National de la Recherche Scientifique (CNRS)-Université de Strasbourg (UNISTRA)-Centre National de la Recherche Scientifique (CNRS)

Subjects
[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics
Published
2023

8. NEUROPULS: NEUROmorphic energy-efficient secure accelerators based on Phase change materials aUgmented siLicon photonicS

Author

Universitat Politècnica de Catalunya. Departament d'Arquitectura de Computadors, Barcelona Supercomputing Center, Universitat Politècnica de Catalunya. CRAAX - Centre de Recerca d'Arquitectures Avançades de Xarxes, Pavanello, Fabio, Marchand, Cedric, O’Connor, Ian, Orobtchouk, Regis, Mandorlo, Fabien, Letartre, Xavier, Cueff, Sebastien, Brando Guillaumes, Axel, Cazorla Almeida, Francisco Javier, Canal Corretger, Ramon, Universitat Politècnica de Catalunya. Departament d'Arquitectura de Computadors, Barcelona Supercomputing Center, Universitat Politècnica de Catalunya. CRAAX - Centre de Recerca d'Arquitectures Avançades de Xarxes, Pavanello, Fabio, Marchand, Cedric, O’Connor, Ian, Orobtchouk, Regis, Mandorlo, Fabien, Letartre, Xavier, Cueff, Sebastien, Brando Guillaumes, Axel, Cazorla Almeida, Francisco Javier, and Canal Corretger, Ramon

Abstract

This special session paper introduces the Horizon Europe NEUROPULS project, which targets the development of secure and energy-efficient RISC-V interfaced neuromorphic accelerators using augmented silicon photonics technology. Our approach aims to develop an augmented silicon photonics platform, an FPGA-powered RISC-V-connected computing platform, and a complete simulation platform to demonstrate the neuromorphic accelerator capabilities. In particular, their main advantages and limitations will be addressed concerning the underpinning technology for each platform. Then, we will discuss three targeted use cases for edge-computing applications: Global National Satellite System (GNSS) anti-jamming, autonomous driving, and anomaly detection in edge devices. Finally, we will address the reliability and security aspects of the stand-alone accelerator implementation and the project use cases., This project has received funding from the European Union’s Horizon Europe research and innovation programme under grant agreement No. 101070238., Peer Reviewed, Article signat per 37 autors/es: Fabio Pavanello 1, Cedric Marchand 1, Ian O’Connor 1, Regis Orobtchouk 1, Fabien Mandorlo 1, Xavier Letartre 1, Sebastien Cueff 1, Elena Ioana Vatajelu 2, Giorgio Di Natale 2, Benot Cluzel 3, Aurelien Coillet 3, Benoit Charbonnier 4, Pierre Noe 4, Frantisek Kavan 5, Martin Zoldak 5, Michal Szaj 5, Peter Bienstman 6, Thomas Van Vaerenbergh 7, Ulrich Ruhrmair 8, Paulo Flores 9, Luis Guerra e Silva 9, Ricardo Chaves 9, Luis-Miguel Silveira 9, Mariano Ceccato 10, Dimitris Gizopoulos 11, George Papadimitriou 11, Vasileios Karakostas 11, Axel Brando 12, Francisco J. Cazorla 12, Ramon Canal 12,13, Pau Closas 14, Adria Gusi-Amigo 14, Paolo Crovetti 15, Alessio Carpegna 16, Tzamn Melendez Carmona 16, Stefano Di Carlo 16, Alessandro Savino 16 / 1 Univ. Lyon, Ecole Centrale de Lyon, INSA Lyon, Universite Claude Bernard Lyon 1, CPE Lyon, CNRS, INL; 2 Univ. Grenoble Alpes, CNRS, Grenoble INP, TIMA, 38000 Grenoble, France; 3 ICB UMR CNRS 6303, Universite de Bourgogne Franche-Comte, Dijon, France; 4 Univ. Grenoble Alpes, CEA, LETI, Grenoble, France, 5ARGOTECH, Nachod, Czech Republic; 6 Ghent University - imec, Gent, Belgium; 7 Hewlett Packard Labs, HPE Belgium, B-1831 Diegem, Belgium; 8 Physics Dept. LMU Munchen, Munchen, Germany; 9 INESC-ID Lisboa, Lisbon, Portugal; 10 Department of Computer Science, University of Verona – Verona, Italy; 11 Department of Informatics and Telecommunications, National and Kapodistrian University of Athens, Athens, Greece; 12 Barcelona Supercomputing Center, Barcelona, Spain; 13 Universitat Politecnica de Catalunya, Barcelona, Spain; 14 Albora Technologies SL, Barcelona, Spain; 15 Politecnico di Torino, Dept. of Electronics and Telecommunications (DET), Italy; 16 Politecnico di Torino, Control and Computer Eng. Department, Italy, Postprint (author's final draft)

Published
2023

11. Critical material reduction in PV interconnection

Author

Perelman, Antoine, Barth, Vincent, Mandorlo, Fabien, Voroshazi, Eszter, Département des Technologies Solaires (DTS), Laboratoire d'Innovation pour les Technologies des Energies Nouvelles et les nanomatériaux (LITEN), Institut National de L'Energie Solaire (INES), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Institut National de L'Energie Solaire (INES), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS), INL - Ingénierie et conversion de lumière (i-Lum) (INL - I-Lum), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), and Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)

Subjects
[SPI.GCIV.EC]Engineering Sciences [physics]/Civil Engineering/Eco-conception
Abstract

International audience; Given the exponential growth of deployed photovoltaic (PV) energy sources, we have to question how to make such growth sustainable. Transition at global scale from fossil fuels to mineral-based renewable energies will indeed induce a sharp turn in materials supply chains. The concept of critical materials covers various sources of supply tensions. More precisely in PV sector, concerns grow for the last few years about Silver price volatility, relative to its scarcity, or about Indium related to its availability.Raw material criticity definition is open to question. No consensus seems to arise yet from literature in order to define influencing factors on criticity. For this study, five supply hazard criteria are selected in order to represent accurately each material supply situation: geological, logistical, geopolitical, industrial and commercial. With those criteria, the materials (and their substitutes) used in PV modules interconnection are listed and for each one, criticity is assessed. List of those elements is the following: Aluminum, Bismuth, Copper, Indium, Nickel, Silver and Tin.Although different dynamics may be observed depending on the concerned material, the main conclusion is that, except Aluminum, all listed elements supplies should face supply tensions by 2050, or even 2030 for the most critical ones [1]. It is important to note that for most of these materials, PV sector has not triggered its critical status.Two material groups should be distinguished. In the first hand, high production and consumption volumes materials (Aluminum and Copper) should not restrict PV energy production capacity expansion projections in the short term but could adversely affect growth in the mid term: by 2050, Copper demand to electrify the whole society should deplete global reserves so its supply is unreliable; it is then compulsory to deeply rethink energy networks, as well as implement a circular approach (reduce, repair, reuse and finally recycle). Moreover, aluminum needed volume for PV on TW scale would induce huge CO2 emissions [2]. On the other hand, other materials (Bismuth, Indium, Silver, and Tin) are used in PV interconnection in dispersive ways: even though PV sector requires a limited amount, they are difficult to recover. These applications must evolve otherwise the known reserves will end around 2040.It draws one main conclusion in the specific case of PV sector: conception has to evolve from dispersive cells interconnection processes, such as low temperature soldering or conductive adhesive bonding. In general, conception step has to focus on end-of-life step to introduce more circular methodologies. Change may happen at three levels: process, material or architecture. Changing or optimizing the deposition process is largely covered in literature over the last 15 years and Silver consumption reduction potential seems to reach its limit [3]. Alternative materials have been rising for the last 5 years and could have a great impact on metallization criticity. In the meantime, critical materials consumption in interconnection could further shrink with a disruptive innovation in module architecture. A few innovation examples, from NICE concept to non-uniform metallization, will be presented.

Published
2022

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