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Your search keyword '"Maity, Heranmoy"' showing total 8 results
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8 results on '"Maity, Heranmoy"'

2. Design and implementations of new reversible 7's and 8's complement code converter for quantum computations.

Author

Maity, Heranmoy, Gupta, Gopal Kumar, Bhattacharjee, Bidrohi, Singh, Ajit K., Singh, Harjeet, and Kumari, Bharti

Subjects
*QUANTUM computing, *ORGANIC wastes, *ENGINEERING
Abstract

Quantum computing is an extremely promising domain in engineering and technology, primarily because it offers low power consumption and high-speed operation. In this article, the authors proposed the new reversible 7's and 8's complement code converter (C-CC) using reversible NOT and Peres gate (PG). The reversible 7's C-CC designed using only three reversible NOT gates. The Quantum cost (QC), Constant Input (CI), garbage output (GO) and Delay are 3, 0, 0 and 1 respectively. The 8's C-CC can be designed by adding extra '1' with 7's Complement code. The 8's C-CC designed using only one PG and four reversible NOT gates. The QC, CI, GO and delay of the proposed 8's C-CC is 8, 0, 0 and 1 respectively. The proposed work is verified using IBM Qiskit simulator. [ABSTRACT FROM AUTHOR]

Published
2024
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5. Analog and linearity performance analysis of ferroelectric vertical tunnel field effect transistor with and without source pocket.

Author

Singh, Ashish Kumar, Kumar, Ramesh, Maity, Heranmoy, Singh, Prabhat, and Singh, Sarabdeep

Subjects
FIELD-effect transistors, ENERGY bands, GERMANIUM, TRANSISTORS, TUNNEL design & construction
Abstract

This study examines the electrical performance characteristics of a ferroelectric vertical tunnel field‐effect transistor (TFET) with and without a source pocket (Si0.5Ge0.5). The incorporation of Germanium in the source of the TFET aims to enhance the on‐current. The Silvaco TCAD simulation tool is utilized to simulate the proposed structure. To improve device performance, a ferroelectric layer with a vertical length is employed in the gate of the TFET. When the ferroelectric layer partially controls the channel region, device characteristics, such as on‐current and subthreshold swing (SS) can be improved (i.e., ION = 15.21 × 10−5 A/μm, ION/IOFF = 5.03 × 109, and a minimum SS of 20.87 mV/decade at 300 K). This article studied a comparison between ferroelectric vertical TFETs and nonferroelectric vertical TFETs, as well as ferroelectric vertical TFETs with and without source pockets. The comparison is done on the basis of DC and RF parameters. Analysis of this comparison represents that ferroelectric vertical TFET with source pocket has improved characteristics. [ABSTRACT FROM AUTHOR]

Published
2024
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