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The study critically examines current condition of global rule in resolving the developing hazard of cyber terrorism. The research dives right into the complexities and problems posed by cyber terrorism as well as reviews the effectiveness of existing lawful platforms in responding to this progressing threat. Employing a diverse series of academic jobs, the study investigates the requirements for brand-new global lawful frameworks, developments in cybercrime inspection as well as digital forensics, as well as the function of surfacing modern technologies in rule administration. Also, the report stresses the significance of enhancing global cyber resilience and response abilities by means of worldwide teamwork and collaboration. The study's searching highlights varied attributes of cyber violence and demand for a complete, collaborated, and international reaction to fight this threat. The analysis uses valuable knowledge right into advancement of brand-new lawful platforms, technologies in cybercrime examination & enlargement of global cyber resilience to deal with problems positioned through cyber terrorism. [ABSTRACT FROM AUTHOR]

Ba(NdxTi(1-2x)Nbx)O3 (x=0.025, 0.05, 0.1 & 0.2) and (Na0.5Bi0.5)(NdyTi(1-2y) Nby)O3 (y=0.0125, 0.025 & 0.05) ceramics were prepared through solid state sintering route. In the present paper X-ray diffraction (XRD) data was obtained using (Philips X-pert Pro Pan Analytical: Model PW3040/60). The XRD data was simulated using modified Arrhenius and Lorentz equation using ORIGIN 6.1 software which was proposed by us earlier. In the case of Ba(NdxTi(1-2x)Nbx)O3 ceramics the values of lattice parameter obtained using modified Arrhenius and Lorentz equations are 3.9597Ao, 4.2534Ao, 5.2364Ao & 5.2690Ao for x=0.025, 0.05, 0.1 & 0.2 respectively. The average values of activation energy for x-ray scattering are 74.47 meV, 85.21 meV, 90.20 meV & 95.79 meV for x=0.025, 0.05, 0.1 & 0.2 respectively. Similar simulation studies were also carried on (Na0.5Bi0.5)(NdyTi(1-2y)Nby)O3 ceramics and the results are presented in this paper. [ABSTRACT FROM AUTHOR]

In the present study Al/a-Si:H/SiO2/n-Si/Al based bottom gate thin film transistor (BGTFT) was fabricated using remote plasma enhanced chemical vapor deposited (RPCVD) SiO2 and PECVD a-Si:H. The Al/a-Si:H/SiO2/n-Si/Al based bottom gate thin film transistor was studied with an intension to apply it for bio-sensing application. The transfer characteristics of BGTFT were studied. The values of Gdd are 3.14 × 10−7 S, 1.38 × 10−7 S, 3.34 × 10−8 S, 4.84 × 10−9 S & 1.57 × 10−10 S for gate voltage Vg = −2, −1, 0, 1 & 2 V respectively. The Gdd values are found to decrease with the increase of gate voltage (Vg). The values of Gdg are 5.36 × 10−8 S, 5.98 × 10−9 S, 7.28 × 10−7 S, 2.40 × 10−7 & 5.00 × 10−9 respectively for Vd = −2, −1, 0, 1 & 2 V. The present current level and the conductance of BGTFT is so large that it is not possible to detect the proteins and antibody as these bio-molecules have charge of the order of nano amps. Therefore it requires a needed focus to study the ferroelectric or high k material as the active material instead of a-Si:H for BGTFT for bio-sensing application as the ferroelectric materials have low conductance and channel current. This will be our future work to use ferroelectric or high k materials as the active materials of BGTFT. [ABSTRACT FROM AUTHOR]

[BaNd0.1Ti0.8Nb0.1O3](1-x)[Na0.5Bi0.5TiO3]x ceramics with x = 0.25, 0.40, 0.60, 0.65 & 0.70 were prepared through solid-state sintering route. In the present study, temperature and frequency dependant dielectric, Impedance, AC resistivity, modulus spectroscopy and electromechanical coupling properties carried out. These materials showed modulus resonance and anti-resonance i.e. electromechanical coupling (M″ vs. frequency). From these modulus resonance and anti-resonance studies piezoelectric charge constant (d33) was obtained. The values of the piezoelectric charge constant (d33) are 3.34 nm V−1, 6.26 nm V−1, 11.58 nm V−1, 14.10 nm V−1 & 10.70 nm V−1 for x = 0.25, 0.40, 0.60, 0.65 & 0.70, respectively. In the present study, the modulus electromechanical was studied in jig with spring which applies constant stress on the ceramic sample. The higher value of electromechanical coupling conversion in the present study may be attributed to this constant applied stress, higher temperature and polarized oxygen vacancies at the crystal lattice at these elevated temperatures (773 K & 873 K). [ABSTRACT FROM AUTHOR]

Ba(NdxTi(1-2x)Nbx)O3 and (Na0.5Bi0.5)(NdyTi1-2yNby)O3 relaxor ferroelectric materials were prepared through solid state sintering route. The polarization as a function of electric field (PE loops) were measured with Radiant technologies PE loop tracer. In the present studies we have extended the surface charge density studies of metal oxide semiconductor (MOS) structure to the polarization studies of metal ferroelectric and metal (MFM) structure in bulk form by combining it with the modified Glazounov and Arrhenius equations. The simulation is in good agreement the experimental data. In the case of Ba(NdxTi(1-2x)Nbx)O3 ceramics the value of dipole moment (p) are 2.24x10−26 C.m, 1.80x10−26 C.m, 2.23x10−26 C.m & 2.21x 10−26 C.m for x = 0.025, 0.05, 0.1 & 0.2, respectively. The values of surface potential (Ψp) are 466 meV, 503 meV, 552 meV & 505 meV for x = 0.025, 0.05, 0.1 & 0.2, respectively. [ABSTRACT FROM AUTHOR]

In the present, paper the simulation of XRD data by modified Arrhenius and Lorentz equations has been proposed for the first time which is new. The trial of simulations have been performed on ferroelectric ceramics [Ba(Nd0.1Ti0.8Nb0.1)TiO3]1-x[Na0.5Bi0.5TiO3]x (x = 0.25), Na(0.5-x)KxBi(0.5-x)DyxTiO3 (x = 0.0125) and (Ba0.997Nd0.003TiO3)+5% SiO2. The simulations performed on the above ceramics are in good agreement with the experimental data. Using the modified Arrhenius and Lorentz equations, we obtained the lattice parameters for the ceramic samples having cubic, rhombohedral and tetragonal symmetry. In addition to the lattice parameters, the activation energy for diffraction has also been evaluated. The simulations of XRD data using Arrhenius and Lorentz equations can also be extended to other compounds with different crystal symmetry. [ABSTRACT FROM AUTHOR]

In our earlier studies we have shown procedure for the estimation of activation energy and relaxation times directly from the dielectric and AC conductivity data simultaneously dependant on T and ω using modified Lorentz equation instead of well-known Arrhenius, modified Arrhenius and Vogel-Fulcher laws. In the present paper we have carried out similar experimental and simulation studies on the dielectric and AC conductivity data using modified Lorentz equations on the ceramic compound (Ba0.997Pr0.003TiO3). The obtained results on the activation energy and relaxation times are presented in this paper. [ABSTRACT FROM AUTHOR]