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Optically transparent lithium fluoride (LiF) thin films, thermally evaporated on Si(100) substrates, are under investigation as novel radiation detectors based on radiophotoluminescence for imaging of the full Bragg curves of proton beams produced by a linear accelerator for proton therapy under development at ENEA C.R. Frascati. Proton irradiation induces the formation of stable colour centres in LiF, amongst which the broadband light-emitting F2 and F3+ aggregate defects, whose concentrations are locally proportional to the energy deposited in the material. Their spatial distributions in the irradiated LiF thin films and crystals are carefully measured by acquiring the latent two-dimensional visible fluorescence images with an optical microscope under blue lamp excitation. Several LiF films grown on silicon substrate were irradiated in air at increasing proton energies up to 35 MeV with their surface parallel to the particle beam and a cleaved edge perpendicularly facing it; for each sample, the fluorescence image acquired from the top surface side of the film allows to obtain the depth profile of the energy released by protons. Differences in colour centre distributions detected in LiF films with respect to LiF crystals are presented and discussed. Accurate Monte Carlo simulations allow to fully explain their experimental behaviours, paving the way towards using LiF film radiation detectors on silicon for the advanced diagnostics of proton beams at typical particle energies used for proton therapy.

© 2023 Optica Publishing Group. Users may use, reuse, and build upon the article, or use the article for text or data mining, so long as such uses are for non-commercial purposes and appropriate attribution is maintained. All other rights are reserved. Nonlinear silicon photonics offers unique abilities to generate, manipulate and detect optical signals in nano-devices, with applications based on field localization and large third order nonlinearity. However, at the nanoscale, inefficient nonlinear processes, absorption, and the lack of realistic models limit the nano-engineering of silicon. Here we report measurements of second and third harmonic generation from undoped silicon membranes. Using experimental results and simulations we identify the effective mass of valence electrons, which determines second harmonic generation efficiency, and oscillator parameters that control third order processes. We can then accurately predict the nonlinear optical properties of complex structures, without introducing and artificially separating the effective ¿(2) into surface and volume contributions, and by simultaneously including effects of linear and nonlinear dispersions. Our results suggest that judicious exploitation of the nonlinear dispersion of ordinary semiconductors can provide reasonable nonlinear efficiencies and transformational device physics well into the UV range. The authors thank Zack Coppens and Dana Dement for useful discussions and help with the sample. LRS, JT, and CC acknowledge to US Army Research Laboratory Cooperative Agreement N° W911NF1920279 issued by US ARMY ACC-APG-RTP and Spanish Agencia Estatal de Investigación (project no. PID2019-105089GBI00/AEI/10.130397501100011033). MAV was partially sponsored by the Army Research Laboratory under Cooperative Agreement N° W911NF2020078.

Aim This audit reviewed management practice of patients admitted to Gozo General Hospital with a head injury, to see whether guidelines are being followed. Method All patients admitted to GGH with a head injury over a twelve-month period (December 2019 – November 2020) were retrospectively reviewed. We used National Institute for Health Care Excellence (NICE) clinical guidance 176 as the standard to compare to. Results 61 patients, with a mean age 33 years, that were admitted to hospital were included. CT head was performed on 36 (59%) patients. According to NICE guidelines, CT head was warranted in these patients: 24 (39%) patients had a CT scan which may not have been indicated according to NICE guidelines. Out of the 61 patients admitted to hospital, admission was warranted in the following: 49 (80%) of admitted patients may have not needed admission. Conclusions This retrospective review suggests that a significant number of patients are being unnecessarily admitted to Gozo General Hospital following a head injury and a significant number are having an unnecessary CT head. The local issues causing this need to be identified and methods need to be introduced to better follow recommended guidelines.

Proton irradiation of lithium fluoride (LiF) crystals and thin films causes the formation of electronic defects, known as color centers, in the crystal lattice, some of which show photoluminescence in the visible range under blue-light excitation. With a suitable irradiation geometry, the energy density that protons deposit in the material can be recorded as a spatial distribution of these light-emitting color centers, from which a luminous replica of the proton Bragg curve can be thereafter extracted and analyzed in a fluorescence microscope. In this paper, the cases of two LiF thin films deposited on silicon substrates and of a LiF crystal, all of them transversally irradiated with a nominal 35 MeV proton beam, are considered. A comparison of the measured photoluminescent Bragg curves with Monte Carlo simulations demonstrates (i) that the Bragg peaks in the films are located at the very same positions that would be expected in the underlying silicon substrates rather than in LiF and (ii) that an even small grazing angle of the impinging proton beam is able to significantly modify the shape of the Bragg curve in the films. Both of these findings are ascribed to the effects of multiple Coulomb scattering in both the film and the substrate. The coincidence of the Bragg peak positions with those expected in the silicon substrates and the possibility of visualizing such peaks in the Bragg curves stored as latent fluorescence images in the LiF films allow one to regard them as information transducers for proton beam diagnostics and dosimetry.

We show that an appropriately designed chalcogenide metasurface allows the enhancement of harmonic generation in the UV range, a regime that conventional wisdom deems inaccessible because of absorption. Here we exploit a combination of the photonic band structure that forms when stacking As2S3 metasurfaces, phase-locking, nonlinear dispersion, and improved field localization to enhance third harmonic conversion efficiency. We demonstrate an improvement of two orders of magnitude with respect to the single layer counterpart notwithstanding the fact that the harmonic signal is tuned deep in the absorption range at 285 nm.