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Ammonia borane (AB) hydrolysis is a sustainable and efficient method for hydrogen energy conversion and transportation. Designing a non-precious AB hydrolysis catalyst with high catalytic activity is considered to be promising but challenging. Herein, highly dispersed Cu0.9Ni0.1 alloy nanoparticles (NPs) were successfully fabricated via a conventional wet-chemical co-reduction method on transition metal carbides (Ti3C2Tx), facilitating hydrogen evolution during AB hydrolysis. The optimized Cu0.9Ni0.1/Ti3C2Tx catalyst exhibits an impressive turnover frequency (TOF) of 2429 h−1 at 323 K for AB hydrolysis, with 100% hydrogen selectivity, outperforming those of most non-precious metal catalysts. This enhanced performance is attributed to the synergistic effect between Cu and Ni, as well as the strong electronic metal–support interaction between Ti3C2Tx and Cu0.9Ni0.1 NPs. This study provides a general and simple method for synthesizing highly efficient non-precious metal AB hydrolysis catalysts. [ABSTRACT FROM AUTHOR]

Black phosphorus (BP) thin film has highlighted its potential in the photoelectric detection field due to its wide-spectrum and high-absorption capacity. However, the fabrication of controllable and highly quality BP film in large dimensions remains a huge challenge. Herein, we creatively fabricated a centimeter-size highly crystalline BP thin film on the bare silicon substrate using a space-confined chemical vapor transport technique, and we in situ constructed a self-driven BP-based metal–semiconductor–metal photodetector. The as-constructed photodetector achieves a high responsivity of up to 500 mA/W, an external quantum efficiency of 42.1%, a maximum specific detectivity of 3.82 × 1010 cm Hz1/2 W−1, and a small noise-equivalent-power of 3.97 × 10−15 W Hz−1/2 under zero bias voltage at 1550 nm illumination. This work provides a strategy to effectively prepare BP thin film for in situ manufacturing self-driven photodetector, which marks a significant step forward in the integration of BP into the industrial settings. [ABSTRACT FROM AUTHOR]

The performance improvements of AlGaN‐based deep ultraviolet light‐emitting diodes (DUV‐LEDs) with multigradient electron blocking layer (EBL) and triangular last quantum barrier (LQB) are investigated. The results show that the maximum internal quantum efficiency (IQE) is improved by 44.9% and light output power (LOP) is improved by 58.1% at 200 A cm−2, exhibiting a tremendous improvement compared to the conventional structure. These improvements are mainly attributed to the fact that both multigradient EBL and triangular LQB can generate negative polarization charges in the graded composition layer, which leads to a significant increase in hole concentration compared to the conventional EBL and LQB structures. Meanwhile, the multigradient EBL can transform the conventional triangular barrier into an arc‐shaped barrier, increasing the electron potential barrier height and decreasing the hole potential barrier height. This unique design suppresses electron leakage and enhances hole injection, leading to a significant enhancement of the IQE and alleviation of the efficiency droop. [ABSTRACT FROM AUTHOR]