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Plasma-enhanced chemical vapor deposition (PE-CVD) of graphene layers on dielectric substrates is one of the most important processes for the incorporation of graphene in semiconductor devices. Graphene is moving rapidly from the laboratory to practical implementation; therefore, devices may take advantage of the unique properties of such nanomaterial. Conventional approaches rely on pattern transfers after growing graphene on transition metals, which can cause nonuniformities, poor adherence, or other defects. Direct growth of graphene layers on the substrates of interest, mostly dielectrics, is the most logical approach, although it is not free from challenges and obstacles such as obtaining a specific yield of graphene layers with desired properties or accurate control of the growing number of layers. In this work, we use density-functional theory (DFT) coupled with ab initio molecular dynamics (AIMD) to investigate the initial stages of graphene growth on silicon oxide. We select C2H2as the PE-CVD precursor due to its large carbon contribution. On the basis of our simulation results for various surface models and precursor doses, we accurately describe the early stages of graphene growth, from the formation of carbon dimer rows to the critical length required to undergo dynamical folding that results in the formation of low-order polygonal shapes. The differences in bonding with the functionalization of the silicon oxide also mark the nature of the growing carbon layers as well as shed light of potential flaws in the adherence to the substrate. Finally, our dynamical matrix calculations and the obtained infrared (IR) spectra and vibrational characteristics provide accurate recipes to trace experimentally the growth mechanisms described and the corresponding identification of possible stacking faults or defects in the emerging graphene layers.

Advances in ex situ and in situ (operando) characteristic techniques have unraveled unprecedented atomic details in the electrochemical reaction of Li-ion batteries. To bridge the gap between emerging evidences and practical material development, an elaborate understanding on the electrochemical properties of cathode materials on the atomic scale is urgently needed. In this work, we perform comprehensive first-principle calculations within the density functional theory + Uframework on the surface stability, morphology, and elastic anisotropy of Ni-rich LiNi1–2yCoyMnyO2(NCM) (y≤ 0.1) cathode materials, which are strongly related to the emerging evidence in the degradation of Li-ion batteries. On the basis of the surface stability results, the equilibrium particle morphology is obtained, which is mainly determined by the oxygen chemical potential. Ni-rich NCM particles are terminated mostly by the (012) and (001) surfaces for oxygen-poor conditions, whereas the termination corresponds to the (104) and (001) surfaces for oxygen-rich conditions. Besides, Ni surface segregation predominantly occurs on the (100), (110), and (104) nonpolar surfaces, showing a tendency to form a rocksalt NiO domain on the surface because of severe Li–Ni exchange. The observed elastic anisotropy reveals that an uneven deformation is more likely to be formed in the particles synthesized under poor-oxygen conditions, leading to crack generation and propagation. Our findings provide a deep understanding of the surface properties and degradation of Ni-rich NCM particles, thereby proposing possible solution mechanisms to the factors affecting degradation, such as synthesis conditions, coating, or novel nanostructures.

Patterned fabrication depends on selective deposition that can be best achieved with atomic layer deposition (ALD). For the growth of TiO2by ALD using TiCl4and H2O, X-ray photoelectron spectroscopy reveals a marked difference in growth on oxidized and hydrogen-terminated silicon surfaces, characterized by typical and predictable deposition rates observed on SiO2surfaces that can be 185 times greater than the deposition rates on hydrogen-terminated Si(100) and Si(111) surfaces. Large-scale patterning is demonstrated using wet chemistry, and nanometer-scale patterned TiO2growth is achieved through scanning tunneling microscopy (STM) tip-based lithography and ALD. The initial adsorption mechanisms of TiCl4on clean, hydrogen-terminated, and OH-terminated Si(100)-(2 × 1) surfaces are investigated in detail through density functional theory calculations. Varying the reactive groups on the substrate is found to strongly affect the probability of precursor nucleation on the surface during the ALD process. Theoretical studies provide quantitative understanding of the experimental differences obtained for the SiO2, hydrogen-terminated, and clean Si(100) and Si(111) surfaces.