1. Characterizing polarization switching kinetics of ferroelectric Hf0.5Zr0.5O2 at cryogenic temperature.
- Author
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Xu, Jiacheng, Shen, Rongzong, Qian, Haoji, Lin, Gaobo, Gu, Jiani, Rong, Jian, Liu, Huan, Ding, Yian, Zhang, Miaomiao, Liu, Yan, Jin, Chengji, Chen, Jiajia, and Han, Genquan
- Subjects
ELECTRIC fields ,TEMPERATURE - Abstract
We have characterized polarization switching kinetics of Hf
0.5 Zr0.5 O2 (HZO) at cryogenic temperature (T) down to 100 K. By the nucleation-limited-switching model with Lorentzian distribution fittings, the dependences of the average switching time (log τ1 ) and switching time distribution (ω) on T are extracted. As T decreases from 300 to 100 K, log τ1 first rapidly decreases and then gradually stabilizes. Meanwhile, ω exhibits different trends under different external electric fields (Eext ), decreasing under low Eext while increasing under high Eext , eventually stabilizing at non-zero constants. With the further decrease in T (<100 K), log τ1 and ω exhibited by HZO are almost unchanged, indicating the intrinsic properties of ferroelectric multiple domains, which are different from the prediction in previous literature studies that log τ1 and ω will linearly decrease as T decreases. [ABSTRACT FROM AUTHOR]- Published
- 2024
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