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Your search keyword '"Lessard, Stephane"' showing total 8 results
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8 results on '"Lessard, Stephane"'

1. 8.5 Tbps Net SiP O-band Coherent Transmission over 10 km Using a Quantum-Dot Mode-Locked Comb Laser

Author

Bernal, Santiago, primary, Dumont, Mario, additional, Berikaa, Essam, additional, St-Arnault, Charles, additional, Hu, Yixiang, additional, Castrejon, Ramon Gutierrez, additional, Wei, Zixian, additional, D'Errico, Antonio, additional, Bigongiari, Alessandra, additional, Giorgi, Luca, additional, Stracca, Stefano, additional, Brunner, Robert, additional, Lessard, Stephane, additional, Cavaliere, Fabio, additional, Bowers, John, additional, and Plant, David V., additional

Published
2024
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2. Co-Packaged Optics Opportunities in Radio-Access Networks

Author

Cavaliere, Fabio, primary, Tartaglia, Antonio, additional, Ljungbro, Agneta, additional, Bigongiari, Alessandra, additional, Lessard, Stephane, additional, Giorgi, Luca, additional, Tavemark, Anna, additional, Parkholm, Ulf, additional, Palagi, Alfredo, additional, Stracca, Stefano, additional, D'Errico, Antonio, additional, and Svee, Nicke, additional

Published
2023
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3. Perspectives for Co-Packaged Optics in Radio Access Networks

Author

Tartaglia, Antonio, primary, Cavaliere, Fabio, additional, Lostedt, Mikael, additional, Bigongiari, Alessandra, additional, Palagi, Alfredo, additional, Parkholm, Ulf, additional, Tavemark, Anna, additional, Stracca, Stefano, additional, D’Errico, Antonio, additional, Lessard, Stephane, additional, and Johansson, Mats, additional

Published
2023
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8. All-silicon multi-band TM-pass polarizer on a 220 nm SOI enabled by multiplexing grating regimes.

Author

Zhang J, Xu L, Mao D, D'Mello Y, Li W, Lessard S, and Plant DV

Abstract

We propose an all-silicon design of a multi-band transverse-magnetic-pass (TM-pass) polarizer. The device is based on one-dimensional gratings that work under different regimes that depend on the polarization. With a tapered structure, it is revealed that the operation bandwidth can be extended by multiplexing the diffraction in O-band and the reflection in S-, C-, and L-bands for the transverse-electric (TE) mode. By simulation, we achieve a 343 nm device bandwidth with insertion loss (IL) < 0.4 dB and polarization extinction ratio (PER) > 20 dB. The operation wavelength range covers commonly-used optical telecommunication bands including the O-, S-, C-, and L- bands. Experimental results also show IL < 1.6 dB and PER > 20 dB from 1265 nm to 1360 nm corresponding to the O-band, and from 1500 nm to 1617 nm that corresponds to the C-band. The device is a single-etched design on the standard 220 nm silicon-on-insulator (SOI) with silicon oxide cladding. Such a simple and compatible design paves the way for developing practical multi-band silicon photonic integrated circuits.

Published
2022
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