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Your search keyword '"Kruchinin, V."' showing total 6 results
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6 results on '"Kruchinin, V."'

3. Optical Properties of Ferroelectric Films HfxZryO2 and La:HfxZryO2 according to Ellipsometry Data.

Author

Kruchinin, V. N., Spesivtsev, E. V., Rykhlitsky, C. V., Gritsenko, V. A., Mehmood, F., Mikolajick, T., and Schroeder, U.

Subjects
*OPTICAL properties, *RANDOM access memory, *ELLIPSOMETRY, *FLASH memory, *OXIDE coating
Abstract

Recently ferroelectric properties have been found in hafnia-based nanosized films. Such films are of the utmost interest for development of a universal memory, which combines the advantages of random access memory and flash memory. The paper studies optical properties of hafnia-zirconium oxide films H-fxZryO2 and lanthanum-alloyed hafnia-zirconium oxide films La:HfxZryO2. Fluctuations of thickness in HfxZryO2 do not exceed 3.5%, fluctuations of thickness in La:HfxZryO2 films—3.2%. Optical properties are analyzed based on effective-medium theory. According to effective-medium theory data, HfxZryO2 films contain 46% HfO2, 54% ZrO2, La:HfxZryO2 films contain 47.5% HfO2, 52.4% ZrO2, 2.5% La2O3. [ABSTRACT FROM AUTHOR]

Published
2023
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5. Optical and electrochromic properties of thin films of ambipolar polyimides with pendant groups based on thioxanthenone derivatives

Author

null Gritsenko V. A., null Spesivtsev E. V., null Rykhlitsky S. V., null Shundrina I. K., null Shundrin L. A., null Odintsov D. S., and null Kruchinin V. N.

Abstract

The optical and electrochromic properties of thin films obtained by centrifugation from solutions containing ambipolar polyimides with pendant groups based on 9H-thioxanthene-9-one and its S-dioxide derivative are studied using spectral ellipsometry, spectrophotometry, and spectroelectrochemistry. It is shown that the spectral dependences of the refractive index n(E) and the absorption coefficient α(E) as well as the electrochromic properties of polyimide thin films under electrochemical reduction and oxidation conditions strongly depend on the type of the pendant group. Based on the estimates of the band gap Eg a conclusion is made about the possible promising use of thin films of polyimides as working layers in memristors of a new type. Keywords: memristors, dielectric films, ambipolar polyimides, ellipsometry, electrochromism.

Published
2022
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6. Charge Transport in Nonstoichiometric SiOx Obtained by Treatment of Thermal SiO2 in Hydrogen Plasma of Electronic-Cyclotron Resonance.

Author

Iskhakzay, R. M. Kh., Kruchinin, V. N., Aliev, V. Sh., Gritsenko, V. A., Dementieva, E. V., and Zamoryanskaya, M. V.

Subjects
*HYDROGEN plasmas, *PLASMA resonance, *CYCLOTRON resonance, *CATHODOLUMINESCENCE, *SILICON oxide, *ELECTRON plasma, *ELECTRON traps
Abstract

Currently, a new generation of high-speed, information-intensive resistive memory based on nonstoichiometric dielectrics is being developed. The electron structure of nonstoichiometric silicon oxide SiOx is set by the value of parameter x. It is found that the treatment of thermal SiO2 in hydrogen plasma electron cyclotron resonance leads to the enrichment of silicon oxide with excess silicon, which in turn leads to the appearance of electron and hole traps in SiOx. SiOx conductivity is bipolar: electrons are injected from negatively biased silicon and holes are injected from positively biased silicon. Cathodoluminescence (CL) experiments confirm the assumption that the traps in SiOx are due to the excess silicon. p++-Si(100)/SiOx/Ni memristor metal-dielectric-semiconductor (MDS) structures are fabricated based on the developed procedure for the preparation of nonstoichiometric oxide in hydrogen plasma of electron cyclotron resonance. Such structures have the properties of resistive switching of SiOx that do not require a forming operation. [ABSTRACT FROM AUTHOR]

Published
2022
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