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Gd1Ba2Cu3O7–δ/SrTiO3 (Gd123/STO) superconductor film (~ 200 nm) was prepared using pulsed laser deposition technique. X-ray diffraction pattern of film reveals the polycrystalline growth with the lattice mismatch ~ 0.25% between the film and substrate. From the resistive behavior, it is clear that Gd123 film exhibits TConset ~ 89 K and TCR = 0 ~ 78 K while mean field TC is ~ 83 K. Temperature dependent resistivity (2–150 K) studies in various applied magnetic fields have been understood on the basis of thermally activated flux flow mechanism. It is observed that the pinning energy decreases with increase in applied magnetic field. To understand the transport mechanism and field effect of magnetic field on the conduction in normal state of film, all the resistivity plots were fitted, where power law is found to increase with increase in applied magnetic field which indicates the field induced enhancement in the inter-band charge carrier scattering in Gd123 film. [ABSTRACT FROM AUTHOR]

BiFeO3 thin films were deposited onto single crystalline Si (100) substrate using Pulsed Laser Deposition technique. The effect of different oxygen partial pressure on the BiFeO3 film growth, structural and transport properties has been investigated. Structural characterization shows that film growth under lower partial pressure exhibits a minor impurity phase which gets suppressed under higher oxygen partial pressure (OP2). The effect of OP2 during the deposition on the leakage current and the role of oxygen vacancies have been understood in the context of various charge transport mechanism. RBS study confirms the presence of oxygen content in the film studied which are responsible for the modification in the Electrical behavior of BFO/Si thin film devices. [ABSTRACT FROM AUTHOR]