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Your search keyword '"Henri-Jean Drouhin"' showing total 3 results
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3 results on '"Henri-Jean Drouhin"'

2. Spin-current in a Magnetic Semiconductor Tunnel Junction: Effect of External Bias Voltage

Author

Thi Loan Nguyen, Henri-Jean Drouhin, and Nguyen Hoai

Subjects
Fuel Technology, Energy Engineering and Power Technology
Abstract

This paper investigates spin-current transport in a GaMnAs/GaAs/GaMnAs magnetic semiconductor tunnel junctions under applied bias voltages. The 30-band k.p approach is used to describe the materials within the heterostructure, incorporating both spin-orbit and exchange interactions. We use the transfer-matrix formalism to derive numerical solutions for the wave functions. At specific bias values, we calculate the polarization of the spin-current component along the z direction of the structure. We show oscillations of the two spin-current components perpendicular to the magnetization with equal polarization amplitude and characteristic period. The polarization amplitude varies around 10%, reflecting the typical polarization in such type of material. The oscillation period - which relates to the Larmor frequency for spin precession - increases with the bias voltage values.

Published
2022

3. Recombination time mismatch and spin dependent photocurrent at a ferromagnetic-metal/semiconductor tunnel junction

Author

Viatcheslav I. Safarov, Igor V. Rozhansky, Ziqi Zhou, Bo Xu, Zhongming Wei, Zhan-Guo Wang, Yuan Lu, Henri Jaffrès, Henri-Jean Drouhin, Laboratoire des Solides Irradiés (LSI), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-École polytechnique (X)-Centre National de la Recherche Scientifique (CNRS), LSI - Physique et Chimie des nano-objets (PCN), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-École polytechnique (X)-Centre National de la Recherche Scientifique (CNRS)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-École polytechnique (X)-Centre National de la Recherche Scientifique (CNRS), A.F. Ioffe Physical-Technical Institute, Russian Academy of Sciences [Moscow] (RAS), Institut Jean Lamour (IJL), Institut de Chimie du CNRS (INC)-Université de Lorraine (UL)-Centre National de la Recherche Scientifique (CNRS), University of Chinese Academy of Sciences [Beijing] (UCAS), Key Laboratory of Semiconductor Materials Science (LSMS), Institute of semiconductors [Chinese Academy of Sciences - Beijing] (IOS), Chinese Academy of Sciences [Beijing] (CAS)-Chinese Academy of Sciences [Beijing] (CAS), Unité mixte de physique CNRS/Thales (UMPhy CNRS/THALES), THALES [France]-Centre National de la Recherche Scientifique (CNRS), Russian Science Foundation project no. 17-12-01182 (spin relaxation model), National Key R&D Program of China (2018YFB2200104)., ANR-10-LABX-0035,Nano-Saclay,Paris-Saclay multidisciplinary Nano-Lab(2010), ANR-19-CE24-0005,SIZMO2D,Injection/detection de spin à champ magnétique nul dans des dispositifs SpinOptroniques à base de Semiconducteurs 2D(2019), ANR-18-CE24-0017,FEOrgSpin,Contrôle ferroélectrique de la spinterface organique/ferromagnétique(2018), and ANR-11-IS10-0001,SISTER,Contrôle electrique de l'injection de spin dans les spin-LEDs par effet de spin-transfert sans champ magnétique(2011)

Subjects
[PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], General Physics and Astronomy
Abstract

International audience; We report on carrier dynamics in a spin photodiode based on a ferromagnetic-metal–GaAs tunnel junction. We show that the helicity-dependent current is determined not only by the electron spin polarization and spin asymmetry of the tunneling but in great part by a dynamical factor resulting from the competition between tunneling and recombination in the semiconductor, as well as by a specific quantity: the charge polarization of the photocurrent. The two latter factors can be efficiently controlled through an electrical bias. Under longitudinal magnetic field, we observe a strong increase of the signal arising from inverted Hanle effect, which is a fingerprint of its spin origin. Our approach represents a radical shift in the physical description of this family of emerging spin devices.

Published
2022

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