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DNA is fundamental for storing and transmitting genetic information. Analyzing DNA or RNA base sequences enables the identification of genetic disorders, monitoring gene expression, and detecting pathogens. Traditional detection techniques like polymerase chain reaction (PCR) and next-generation sequencing (NGS) have limitations, including complexity, high cost, and the need for advanced computational skills. Therefore, there is a significant demand for enzyme-free and amplification-free strategies for rapid, low-cost, and sensitive DNA detection. DNA biosensors, especially those utilizing plasmonic nanomaterials, offer a promising solution. This study introduces a novel DNA-functionalized waveguide-enhanced nanoplasmonic optofluidic biosensor using a nanogold-linked sorbent assay for enzyme-free and amplification-free DNA detection. Integrating plasmonic gold nanoparticles (AuNPs) with a glass planar waveguide (WG) and a microfluidic channel, fabricated through cost-effective, vacuum-free methods, the biosensor achieves specific detection of complementary target DNA sequences. Utilizing a sandwich architecture, AuNPs labeled with detection DNA probes enhance sensitivity by altering evanescent wave distribution and inducing plasmon resonance modes. The biosensor demonstrated exceptional performance in DNA detection, achieving a limit of detection (LOD) of 33.1 fg/mL (4.36 fM) with a rapid response time of approximately 8 min. This ultrasensitive, rapid, and cost-effective biosensor exhibits minimal background nonspecific adsorption, making it highly suitable for clinical applications and early disease diagnosis. The innovative design and fabrication processes offer significant advantages for mass production, presenting a viable tool for precise disease diagnostics and improved clinical outcomes.

Particle plasmon resonance (PPR), or localized surface plasmon resonance (LSPR), utilizes intrinsic resonance in metal nanoparticles for sensor fabrication. While diffraction grating waveguides monitor bioaffinity adsorption with out-of-plane illumination, integrating them with PPR for biomolecular detection schemes remains underexplored. This study introduces a label-free biosensing platform integrating PPR with a diffraction grating waveguide. Gold nanoparticles are immobilized on a glass slide in contact with a sample, while a UV-assisted embossed diffraction grating is positioned opposite. The setup utilizes diffraction in reflection to detect changes in the environment’s refractive index, indicating biomolecular binding at the gold nanoparticle surface. The positional shift of the diffracted beam, measured with varying refractive indices of sucrose solutions, shows a sensitivity of 0.97 mm/RIU at 8 cm from a position-sensitive detector, highlighting enhanced sensitivity due to PPR–diffraction coupling near the gold nanoparticle surface. Furthermore, the sensor achieved a resolution of 3.1 × 10−4 refractive index unit and a detection limit of 4.4 pM for detection of anti-DNP. The sensitivity of the diffracted spot was confirmed using finite element method (FEM) simulations in COMSOL Multiphysics. This study presents a significant advancement in biosensing technology, offering practical solutions for sensitive, rapid, and label-free biomolecule detection.

Abstract Ge‐on‐insulators (GOIs) have been extensively explored as a potential platform for electronic‐photonic integrated circuits (EPICs), enabling various emerging applications. Although an efficient electrically‐injected light source is highly desirable, realizing such devices with optimal light emission efficiency remains challenging. Here, the first room‐temperature electrically‐injected Ge waveguide light emitters consisting of a lateral p–i–n homojunction on a GOI platform that can be monolithically integrated with EPICs are demonstrated. A high‐quality Ge active layer is transferred onto an insulator layer with the misfit dislocations in the Ge active layer eliminated to suppress unwanted nonradiative recombination. A 0.165% tensile strain is introduced to enhance the directness of the band structure and improve the light emission efficiency. The device comprises a waveguide structure with a significantly improved optical confinement as the optical resonator and a lateral p–i–n homojunction structure as the electrical injection structure. Under continuous‐wave electrical current injection at room temperature, enhanced electroluminescence is successfully observed at telecommunications wavelengths covering the C, L, and U bands, with improved efficiency. Theoretical analysis suggests that the quantum efficiency of Ge light emitters is dramatically affected by the defect density. These results pave the way for developing efficient, room‐temperature, electrically‐injected light emitters for next‐generation GOI‐based EPICs.

GeSn alloys have recently emerged as complementary metal–oxide–semiconductor (CMOS)-compatible materials for optoelectronic applications. Although various photonic devices based on GeSn thin films have been developed, low-dimensional GeSn quantum structures with improved efficiencies hold great promise for optoelectronic applications. This study theoretically analyses Ge-capped GeSn pyramid quantum dots (QDs) on Ge substrates to explore their potential for such applications. Theoretical models are presented to calculate the effects of the Sn content and the sizes of the GeSn QDs on the strain distributions caused by lattice mismatch, the band structures, transition energies, wavefunctions of confined electrons and holes, and transition probabilities. The bandgap energies of the GeSn QDs decrease with the increasing Sn content, leading to higher band offsets and improved carrier confinement, in addition to electron–hole wavefunction overlap. The GeSn QDs on the Ge substrate provide crucial type–I alignment, but with a limited band offset, thereby decreasing carrier confinement. However, the GeSn QDs on the Ge substrate show a direct bandgap at higher Sn compositions and exhibit a ground-state transition energy of ~0.8 eV, rendering this system suitable for applications in the telecommunication window (1550 nm). These results provide important insights into the practical feasibility of GeSn QD systems for optoelectronic applications.

Group-IV GeSn photodetectors (PDs) compatible with standard complementary metal–oxide-semiconductor (CMOS) processing have emerged as a new and non-toxic infrared detection technology to enable a wide range of infrared applications. The performance of GeSn PDs is highly dependent on the Sn composition and operation temperature. Here, we develop theoretical models to establish a simple rule of thumb, namely “GeSn−rule 23”, to describe GeSn PDs’ dark current density in terms of operation temperature, cutoff wavelength, and Sn composition. In addition, analysis of GeSn PDs’ performance shows that the responsivity, detectivity, and bandwidth are highly dependent on operation temperature. This rule provides a simple and convenient indicator for device developers to estimate the device performance at various conditions for practical applications.

Group IV alloys of GeSn have been extensively investigated as a competing material alternative in shortwave-to-mid-infrared photodetectors (PDs). The relatively large defect densities present in GeSn alloys are the major challenge in developing practical devices, owing to the low-temperature growth and lattice mismatch with Si or Ge substrates. In this paper, we comprehensively analyze the impact of defects on the performance of GeSn p-i-n homojunction PDs. We first present our theoretical models to calculate various contributing components of the dark current, including minority carrier diffusion in p- and n-regions, carrier generation–recombination in the active intrinsic region, and the tunneling effect. We then analyze the effect of defect density in the GeSn active region on carrier mobilities, scattering times, and the dark current. A higher defect density increases the dark current, resulting in a reduction in the detectivity of GeSn p-i-n PDs. In addition, at low Sn concentrations, defect-related dark current density is dominant, while the generation dark current becomes dominant at a higher Sn content. These results point to the importance of minimizing defect densities in the GeSn material growth and device processing, particularly for higher Sn compositions necessary to expand the cutoff wavelength to mid- and long-wave infrared regime. Moreover, a comparative study indicates that further improvement of the material quality and optimization of device structure reduces the dark current and thereby increases the detectivity. This study provides more realistic expectations and guidelines for evaluating GeSn p-i-n PDs as a competitor to the III-V- and II-VI-based infrared PDs currently on the commercial market.

The 2 μm wavelength band (1800–2100 nm) emerges as a promising candidate for next‐generation optical communication. As a result, silicon photonic platforms acquire great interest since they offer the ultimate minimization of photonic systems for 2 μm band applications. However, the large bandgap and indirectness of the band structure of the conventional SiGe alloy prevent their utilization for efficient photodetection in the 2 μm wavelength band. To overcome this drawback, complementary metal‐oxide semiconductor (CMOS)‐compatible GeSn waveguide photodetectors (WGPDs) with a vertical p–i–n heterojunction configuration that can operate in the 2 μm wavelength band is demonstrated. The proposed photodetector incorporates 5.28% Sn into the GeSn active layer, which redshifts the photodetection range to 2090 nm. In addition, the longer light–matter interaction length and good optical confinement of the proposed GeSn WGPD enhance the optical responses significantly. As a result, the proposed GeSn WGPD achieves a responsivity up to 0.52 A W−1 and a detectivity up to 7.9 × 108 cm Hz½ W−1 in the 2 μm wavelength band at room temperature. These promising results indicate that the developed GeSn WGPDs are promising candidates for integrated photonics in the 2 μm wavelength band.

Graphene-on-silicon photodetectors exhibit broadband detection capabilities with high responsivities, surpassing those of their counterpart semiconductors fabricated purely using graphene or Si. In these studies, graphene channels were considered electrically neutral, and signal amplification was typically attributed to the photogating effect. By contrast, herein, we show graphene channels to exhibit p-type characteristics using a structure wherein a thin oxide layer insulated the graphene from Si. The p-type carrier concentration is higher (six-times) than the photoaging-induced carrier concentration and dominates the photocurrent. Additionally, we demonstrate photocurrent tunability in the channel. By operating this device under a back-gated bias, photocurrent tuning is realized with not only amplification but also attenuation. Gate amplification produces a current equal to the photogating current at a low bias (0.2 V), and it is approximately two orders of magnitude larger at a bias of 2 V, indicating the operation effectiveness. Meanwhile, photocurrent attenuation enables adjustments in the detector output for compatibility with read-out circuits. A quantification model of gate-dependent currents is further established based on the simulation model used for metal–oxide–semiconductor devices. Thus, this study addresses fundamental issues concerning graphene channels and highlights the potential of such devices as gate-tunable photodetectors in high-performance optoelectronics.

Silicon photonics is emerging as a competitive platform for electronic–photonic integrated circuits (EPICs) in the 2 µm wavelength band where GeSn photodetectors (PDs) have proven to be efficient PDs. In this paper, we present a comprehensive theoretical study of GeSn vertical p–i–n homojunction waveguide photodetectors (WGPDs) that have a strain-free and defect-free GeSn active layer for 2 µm Si-based EPICs. The use of a narrow-gap GeSn alloy as the active layer can fully cover entire the 2 µm wavelength band. The waveguide structure allows for decoupling the photon-absorbing path and the carrier collection path, thereby allowing for the simultaneous achievement of high-responsivity and high-bandwidth (BW) operation at the 2 µm wavelength band. We present the theoretical models to calculate the carrier saturation velocities, optical absorption coefficient, responsivity, 3-dB bandwidth, zero-bias resistance, and detectivity, and optimize this device structure to achieve highest performance at the 2 µm wavelength band. The results indicate that the performance of the GeSn WGPD has a strong dependence on the Sn composition and geometric parameters. The optimally designed GeSn WGPD with a 10% Sn concentration can give responsivity of 1.55 A/W, detectivity of 6.12 × 1010 cmHz½W−1 at 2 µm wavelength, and ~97 GHz BW. Therefore, this optimally designed GeSn WGPD is a potential candidate for silicon photonic EPICs offering high-speed optical communications.

The rapid and sensitive detection of human C-reactive protein (CRP) in a point-of-care (POC) may be conducive to the early diagnosis of various diseases. Biosensors have emerged as a new technology for rapid and accurate detection of CRP for POC applications. Here, we propose a rapid and highly stable guided-mode resonance (GMR) optofluidic biosensing system based on intensity detection with self-compensation, which substantially reduces the instability caused by environmental factors for a long detection time. In addition, a low-cost LED serving as the light source and a photodetector are used for intensity detection and real-time biosensing, and the system compactness facilitates POC applications. Self-compensation relies on a polarizing beam splitter to separate the transverse-magnetic-polarized light and transverse-electric-polarized light from the light source. The transverse-electric-polarized light is used as a background signal for compensating noise, while the transverse-magnetic-polarized light is used as the light source for the GMR biosensor. After compensation, noise is drastically reduced, and both the stability and performance of the system are enhanced over a long period. Refractive index experiments revealed a resolution improvement by 181% when using the proposed system with compensation. In addition, the system was successfully applied to CRP detection, and an outstanding limit of detection of 1.95 × 10−8 g/mL was achieved, validating the proposed measurement system for biochemical reaction detection. The proposed GMR biosensing sensing system can provide a low-cost, compact, rapid, sensitive, and highly stable solution for a variety of point-of-care applications.