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Raman spectroscopy is a valuable characterization tool for two dimensional (2D) materials. Although some of these materials are topological, the Raman signatures of electronic band topology have remained largely unexplored. On a theoretical study of 2D massive Dirac fermions, we report a selection rule and a peculiar phase difference between the Raman tensor elements, which are sensitive to the sign of the Dirac mass. We discuss on the applicability of our results to Chern insulators and to magnetized monolayers of transition metal dichalcogenides., Comment: 14 pages, 10 figures

The miniaturization of integrated circuits is facing an obstruction due to the escalating electrical resistivity of conventional copper interconnects. The underlying reason for this problem was unveiled by Fuchs and Sondheimer, who showed that thinner wires are more resistive because current-carrying electrons encounter the rough surfaces of the wire more frequently therein. Here, we present a generalization of the Fuchs-Sondheimer theory to Dirac and Weyl materials, which are candidates for next-generation interconnects. We predict a nonlinear longitudinal electric current originating from the combined action of the Berry curvature and non-specular surface-scattering., Comment: 5 pages + appendices

In cosmology, the axion is a hypothetical particle that is currently considered as candidate for dark matter. In condensed matter, a counterpart of the axion (the "axion quasiparticle") has been predicted to emerge in magnetoelectric insulators with fluctuating magnetic order and in charge-ordered Weyl semimetals. To date, both the cosmological and condensed-matter axions remain experimentally elusive or unconfirmed. Here, we show theoretically that ordinary lattice vibrations can form an axion quasiparticle in Dirac insulators with broken time- and space-inversion symmetries, even in the absence of magnetic fluctuations. The physical manifestation of the phononic axion is a magnetic-field-induced phonon effective charge, which can be probed in optical spectroscopy. By replacing magnetic fluctuations with lattice vibrations, our theory widens the scope for the observability of the axion quasiparticle in condensed matter., Comment: 12 pages, 4 figures, Published version

In magnetic memories, the state of a ferromagnet is encoded in the orientation of its magnetization. The energy of the system is minimized when the magnetization is parallel or antiparallel to a preferred (easy) axis. These two stable directions define the logical bit. Under an external perturbation, the direction of magnetization can be controllably reversed and thus the bit flipped. Here, we theoretically design a topological analogue of the magnetic bit in the Su-Schrieffer-Heeger (SSH)-Holstein model, where we show that a transient external perturbation can lead to a permanent change in the electronic band topology., Comment: 14 pages, 5 figures

Recently, it has been predicted that the Berry curvature of electrons can produce an angular momentum for phonons. In systems with time-reversal symmetry, the direction of the phonon angular momentum is locked to the phonon wave vector. Accordingly, this phenomenon has received the name of ``phonon helicity". Here, we present a theory to unveil the signatures of such phonon helicity using Raman scattering. We show that the intensity of Raman scattering for circularly polarized light in BaMnSb$_2$ (a prototypical nonchiral Dirac insulator) changes under a reversal of the phonon wave vector, and that the phonon helicity can be inferred from that change. We compare our results to recent reports of Raman-based detection of phonon angular momentum in chiral crystals., Comment: 6 pages, 1 figure, 2 appendices

Nontrivial band topologies in semimetals lead to robust surface states that can contribute dominantly to the total conduction. This may result in reduced resistivity with decreasing feature size contrary to conventional metals, which may highly impact the semiconductor industry. Here we study the resistivity scaling of a representative topological semimetal CoSi using realistic band structures and Green's function methods. We show that there exists a critical thickness d_c dividing different scaling trends. Above d_c, when the defect density is low such that surface conduction dominates, resistivity reduces with decreasing thickness; when the defect density is high such that bulk conduction dominates, resistivity increases in as conventional metals. Below d_c, the persistent remnants of the surface states give rise to decreasing resistivity down to the ultrathin limit, unlike in topological insulators. The observed CoSi scaling can apply to broad classes of topological semimetals, providing guidelines for materials screening and engineering. Our study shows that topological semimetals bear the potential of overcoming the resistivity scaling challenges in back-end-of-line interconnect applications.

Van Roosbroeck's equations constitute a versatile tool to determine the dynamics of electrons under time- and space-dependent perturbations. Extensively utilized in ordinary semiconductors, their potential to model devices made from topological materials remains untapped. Here, we adapt van Roosbroeck's equations to theoretically study the bulk response of a Weyl semimetal to an ultrafast and spatially localized light pulse in the presence of a quantizing magnetic field. We predict a transient oscillatory photovoltage that originates from the chiral anomaly. The oscillations take place at the plasma frequency (THz range) and are damped by intervalley scattering and dielectric relaxation. Our results illustrate the ability of van Roosbroeck's equations to unveil the interplay between electronic band topology and fast carrier dynamics in microelectronic devices., Comment: 5 pages + appendix. Version accepted for publication

We assess the viability of topological semimetals for application in advanced interconnect technology, where conductor size is on the order of a few nanometers and grain boundaries are expected to be prevalent. We investigate the electron transport properties and grain boundary scattering in thin films of the topological semimetals CoSi and CoGe using first-principles calculations combined with the Non-Equilibrium Green's Function (NEGF) technique. Unlike conventional interconnect metals like Cu and Al, we find that CoSi and CoGe conduct primarily through topologically-protected surface states in thin film structures even in the presence of grain boundaries. The area-normalized resistance decreases with decreasing film thickness for CoSi and CoGe thin films both with and without grain boundaries; a trend opposite to that of the conventional metals Cu and Al. The surface-dominated transport mechanisms in thin films of topological semimetals with grain boundaries demonstrates a fundamentally new paradigm of the classical resistivity size-effect, and suggests that these materials may be promising candidates for applications as nano-interconnects where high electrical resistivity acts as a major bottleneck limiting semiconductor device performance., Comment: 18 pages, 9 figures. To be published in Physical Review Applied