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Cylindrical magnetic nanowires have been proposed as a means of storing and processing information in a 3D medium, based on the motion of domain walls~(DWs). Introducing short chemical modulations in such wires would allow for reliable digital control of DWs. Here, we outline the intricate physics of the interaction of domain walls with modulations to control their motion, combining micromagnetic simulations and experimental evidence. This interaction combines a long-range moderate magnetostatic repulsion with a local energy well. The latter depends on the respective circulation sense of magnetization in the domain wall and modulation. We also show that a modulation has the ability to switch the internal circulation of a DW upon its propagation, thereby acting as a polarizing component and opening the possibility to exploit not only the position of walls, but also their internal structure.

Topology is a powerful tool for categorizing magnetization textures, highlighting specific features in both 2D systems, such as thin films or curved surfaces, and in 3D bulk systems. In the emerging field of 3D nanomagnetism within confined geometries, the contributions from both volume and surface must be considered, requiring appropriate topological analysis to obtain a complete view of the system. Here, we consider domain walls in cylindrical magnetic nanowires to illustrate the use of topological invariants. We begin with micromagnetic simulations of domain wall transformation under the stimulus of an \OErsted field, tracking bulk and surface topological signatures, and analyzing the interplay between multiple micromagnetic objects. For instance, the extensive analysis allowed us to highlight mechanisms of domain wall type conversion from topologically non-trivial to trivial states, a phenomenon disregarded in previous studies. Additionally, we provide experimental evidence of the transient states predicted to occur during the dynamical process.

The concept of Perpendicular Shape-Anisotropy Spin-Transfer-Torque Magnetic Random-Access Memory tackles the downsize scalability limit of conventional ultrathin magnetic tunnel junctions (MTJ) below sub-20 nm technological nodes. This concept uses a thicker storage layer with a vertical aspect ratio, enhancing the thermal stability factor thanks to the favorable contribution of the shape anisotropy. However, the increased aspect ratio comes with an increase in switching time under applied voltage and the cross-over to non-uniform reversal mechanism at higher aspect ratio, limiting the gain in scalability. Additionally, the larger volume of the magnetic cell significantly increases the stray field acting on the neighboring devices compared to thin MTJs. In this work, we propose the use of a dipolar-coupled core-shell system as a storage layer. This improves both bottlenecks, as predicted by micromagnetic simulations for magnetisation reversal, and a macrospin model to estimate the stray field in a dense array., Comment: 11 pages, 11 figures

We analyze the micromagnetics of short longitudinal modulations of a high-magnetization material in cylindrical nanowires made of a soft-magnetic material of lower magnetization such as permalloy, combining magnetic microscopy, analytical modeling, and micromagnetic simulations. The mismatch of magnetization induces curling of magnetization around the axis in the modulations, in an attempt to screen the interfacial magnetic charges. The curling angle increases with modulation length, until a plateau is reached with nearly full charge screening for a specific length scale~$\Delta_\mathrm{mod}$, larger than the dipolar exchange length of any of the two materials. The curling circulation can be switched by the Oersted field arising from a charge current with typical magnitude $10^{12} A/m^{2}$ for a diameter of $\sim$100 nm, and reaching a maximum for $\Delta_\mathrm{mod}$.

Speed and reliability of magnetic domain wall (DW) motion are key parameters that must be controlled to realize the full potential of DW-based magnetic devices for logic and memory applications. A major hindrance to this is extrinsic DW pinning at specific sites related to shape and material defects, which may be present even if the sample synthesis is well controlled. Understanding the origin of DW pinning and reducing it is especially desirable in electrochemically-deposited cylindrical magnetic nanowires (NWs), for which measurements of the fascinating physics predicted by theoretical computation have been inhibited by significant pinning. We experimentally investigate DW pinning in Co$_x$Ni$_{100-x}$ NWs, by applying quasistatic magnetic fields. Wire compositions were varied with $x=20,30,40$, while the microstructure was changed by annealing or varying the pH of the electrolyte for deposition. We conclude that pinning due to grain boundaries is the dominant mechanism, decreasing inversely with both the spontaneous magnetization and grain size. Second-order effects include inhomogeneities in lattice strain and the residual magnetocrystalline anisotropy. Surface roughness, dislocations and impurities are not expected to play a significant role in DW pinning in these wire samples., Comment: 10 pages, 4 figures, regular manuscript