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In this study, we propose doping-less feedback field-effect transistors (DLFBFETs). Our DLFBFETs are 5 nm thick intrinsic semiconductor bodies with dual gates. Usually, DLFBFETs are virtually doped through charge plasma phenomena caused by the source, the drain, and the dual-gate electrodes as well as the gate biases. Our DLFBFETs can be fabricated through a simple process of creating contact between a metal and a silicon body without any doping processes. The voltages applied to both gates determine whether the DLFBFETs operate in diode or feedback field-effect transistor (FBFET) modes. In the FBFET mode, our DLFBFETs show good characteristics such as an on/off current ratio of ~104 and steep switching characteristics (~1 mV/decade of current) that result from positive feedback phenomena without dopants.

In this study, we present a reconfigurable feedback field-effect transistor (FET) that can operate in both p- and n-type configurations using a feedback mechanism. In contrast to previously reported reconfigurable FETs, our device utilizes a single gate to trigger a feedback mechanism at the center, resulting in steep switching characteristics. The device exhibited high symmetry of transfer characteristics, an on/off current ratio of approximately 1010, extremely low subthreshold swings, and a high on-current of approximately 1.5 mA at low gate voltages in both configurations. In addition, because of their hysteresis and bistable characteristics, they can be applied to various electronic devices. These characteristics were analyzed using a commercial device simulator.

In this study, we investigate the temperature-dependent electrical characteristics of bistable silicon resistors (biristors) at temperatures ranging from 275 to 400 K. The proposed biristor exhibits low latch voltages owing to the surface accumulation layer transistor concept. Moreover, the biristor was abruptly turned on and off by positive and negative feedback phenomena, respectively. As the temperature increased from 275 to 400 K, the latch-up voltage decreased from 2.131 to 1.696 V, while the latch-down voltage increased from 1.486 to 1.637 V. Mechanisms of temperature-dependent change in latch voltage were analyzed using energy band diagrams. This temperature-dependent analysis on silicon biristor can serve as blueprint for the contribution of stable operation.