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We propose a new type of magnetoelectric memory device that stores magnetic easy-axis information or pseudo-magnetization, rather than a definite magnetization direction, in magnetoelectrically coupled heterostructures. Theoretically, we show how a piezoelectric/ferromagnetic (PE/FM) combination can lead to non-volatility in pseudo-magnetization exhibiting overall ferroelectric-like behavior. The pseudo-magnetization can be manipulated by extremely low voltages especially when the FM is a low-barrier nano-magnet. Using a circuit model benchmarked against experiments, we determine the switching energy, delay, switching probability and retention time of the envisioned 1T/1C memory device in terms of magnetic and circuit parameters and discuss its thermal stability in terms of a key parameter called back-voltage vm which is an electrical measure of the strain-induced magnetic field. Taking advantage of ferromagnetic resonance measurements, we experimentally extract values for vm in CoFeB films and circular nano-magnets deposited on Pb(Mg1/3Nb2/3)0.7Ti0.3O3 which agree well with the theoretical values. Our experimental findings indeed indicate the feasibility of the proposed novel device and confirm the assumed parameters in our modeling effort. [ABSTRACT FROM AUTHOR]

We report different growth modes and corresponding magnetic properties of thin EuSe films grown by molecular beam epitaxy on BaF2, Pb1−xEuxSe, GaAs, and Bi2Se3 substrates. We show that EuSe grows predominantly in the (001) orientation on GaAs(111) and Bi2Se3, but along the (111) crystallographic direction on BaF2 (111) and Pb1−xEuxSe (111). High resolution transmission electron microscopy measurements reveal a sharp and highly crystalline interface for both (001) and (111) EuSe films. In agreement with previous studies, ordered magnetic phases include antiferromagnetic, ferrimagnetic, and ferromagnetic phases. In contrast to previous studies, we found a strong hysteresis of the antiferromagnetic–ferrimagnetic transition. The ability to grow epitaxial films of EuSe on Bi2Se3 and of Bi2Se3 on EuSe enables further investigation of interfacial exchange interactions between various phases of an insulating metamagnetic material and a topological insulator. [ABSTRACT FROM AUTHOR]

• A new thermoelectric cement composite enhanced by graphite and MnO 2. • Simultaneous measurement of thermoelectric properties for cement composites. • Impacts of dry mixing and wet mixing on samples' TE performance. • Impacts of additives' concentrations and electrical contact resistance. Thermoelectric cement, the mixture of cement and thermoelectric additives, can convert energy between thermal and electrical forms due to the thermoelectric additives. Potentially, they could be the material for building envelopes to harvest waste heat and/or provide space cooling or heating. When there is a significant difference between indoor and outdoor temperatures, the thermoelectric cement can generate electricity using the temperature gradient. And the same material can cool or heat building space via building envelopes with an electrical input. The research aimed to identify and characterize thermoelectric cement candidates for building envelope applications. The additives used in the studied thermoelectric cement candidates include graphite and MnO 2. Except for the additives, the study also explored the impact of the two different fabrication methods: wet-mixing and dry-mixing on thermoelectric performance. The images of TE cement candidates taken by scanning electron microscopy and energy dispersive X-ray microscopy visualized the morphology and distribution of additives in the thermoelectric cement composites. The DynaCool Physical Properties Measurement System used in the study simultaneously measured the candidates' thermoelectric properties, including thermal conductivity, electrical conductivity, Seebeck coefficient, and Figure of merit (ZT). The test results showed that the thermoelectric cement with the additives of 10% (weight ratio) graphite and 5% MnO 2 has the highest ZT of 6.2 × 10−6 at 350 K. ZT of the thermoelectric cement is even higher to 10−5 orders of magnitude when applying a four-probe electrical resistivity method to account for the contact resistance. [ABSTRACT FROM AUTHOR]