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NbAs is a Weyl semimetal and belongs to the group of topological phases that exhibit distinct quantum and topological attributes. Topological phases have a fundamentally different response to external perturbations, such as magnetic fields. To obtain insights into the response of such phases to pressure, we conducted a comprehensive study on the pressure-induced electronic and structural transitions in NbAs. We used micro-X-ray diffraction (XRD) and micro-X-ray spectroscopy (XAS) techniques to elucidate the changes at different atomic and electronic length scales (local, medium, and bulk) as combined with theoretical calculations. High-pressure XRD measurements revealed a rather common compression behavior up to ~12 GPa that could be fitted to an equation of state formalism with a bulk modulus of K 0 = 179.6 GPa. Complementary Nb K-edge XAS data unveiled anomalies at pressure intervals of ~12–15 and ~25–26 GPa in agreement with previous literature data from XRD studies. We attribute these anomalies to a previously reported topological Lifshitz transition and the tetragonal-to-hexagonal phase transition, respectively. Analysis of EXAFS results revealed slight changes in the mean next-nearest neighbor distance Nb–As(1) (~2.6 Å) at ~15 GPa, while the second nearest neighboring bond Nb–Nb(1) (~3.4 Å) shows a pronounced anomaly. This indicates that the electronic changes across the Lifshitz transition are accommodated first in the medium-range atomic structure and then at the local range and bulk. The variances of these bonds show anomalous but progressive evolutions close to the tetragonal-to-hexagonal transition at ~25 GPa, which allowed us to derive the evolution of vibration properties in this material. We suggest a prominent displacive character of the I 4 1 m d → P 6 ¯ m 2 transition facilitated by phonon modes. [ABSTRACT FROM AUTHOR]

Two-dimensional borophene nanosheets are sensitive to oxygen, which has hindered their development and use in scientific research and subsequent applications. Conventional methods of borophene synthesis are based on its epitaxial growth on single-crystal metal substrates by using molecular beam epitaxy (MBE). The electron deficiency of boron atoms in the borophene structure has made the use of metal substrates in the growth process inevitable. Hence, a method to stabilize the borophene sheets for further applications seems necessary. In this work, the oxidation arrangement of Al-activated chemical vapor deposition (CVD) of borophene sheets was investigated via scanning photoemission microscopy (SPEM). This method allows the investigation of oxidation ordering via its high spatial resolution and elemental sensitivity. The results indicate the persistence of the borophene χ3 (and some β12) phase after exposure to air. The formation of boron oxide is primarily limited to the Al aggregated islands and the edges while maintaining the borophene configuration intact. Our results show that the electronic exchange between the Al aggregates and the interface of boron atoms at the edges of the borophene sheet can prevent the oxidation process and preserve the borophene sheets for long periods. The lower oxidation tendency of the Al-saturated borophene was confirmed via density functional theory calculation, showing a lower oxygen binding energy on Al/borophene compared with that of the metal-free borophene. The oxidation-resistive borophene can be exploited in innovative high-efficiency catalytic, electronic, and sensing devices. [ABSTRACT FROM AUTHOR]

Pressure-induced transformations in an archetypal chalcogenide glass (GeSe2) have been investigated up to 157 GPa by X-ray absorption spectroscopy (XAS) and molecular dynamics (MD) simulations. Ge and Se K-edge XAS data allowed simultaneous tracking of the correlated local structural and electronic changes at both Ge and Se sites. Thanks to the simultaneous analysis of extended X-ray absorption fine structure (EXAFS) signals of both edges, reliable quantitative information about the evolution of the first neighbor Ge-Se distribution could be obtained. It also allowed to account for contributions of the Ge-Ge and Se-Se bond distributions (chemical disorder). The low-density to high-density amorphous-amorphous transformation was found to occur within 10 to 30 GPa pressure range, but the conversion from tetrahedral to octahedral coordination of the Ge sites is completed above ~ 80 GPa. No convincing evidence of another high-density amorphous state with coordination number larger than six was found within the investigated pressure range. The number of short Ge-Ge and Se-Se "wrong" bonds was found to increase upon pressurization. Experimental XAS results are confirmed by MD simulations, indicating the increase of chemical disorder under high pressure. [ABSTRACT FROM AUTHOR]

The structure of the Ga85.8In14.2 eutectic liquid alloy is investigated both under ambient conditions and at high pressure/high temperature using X‐ray absorption spectroscopy (XAS) and X‐ray diffraction (XRD) techniques. The local structure of the liquid alloy at ambient conditions is analyzed using double‐edge refinements of the XAS data. Solid–liquid phase transitions under high‐pressure and high‐temperature conditions are monitored by combined XAS and XRD measurements along several quasi‐isobaric heating runs, allowing to draw a melting line up to 10 GPa. The established melting line is found to be slightly below the one of pure gallium (Ga) and to follow its trend as expected from the eutectic nature of the compound. A series of Ga K‐edge X‐ray absorption fine structure (XAFS) spectra measured at different pressures indicates the absence of large structural modifications at local Ga sites in the liquid within the investigated pressure and temperature range. [ABSTRACT FROM AUTHOR]

The protective coating of the electrode materials is a known source of improvement of the cycling performances in battery devices. In the case of the LiMn 2 O 4 cathodes, the coating with a thin alumina layer has been proven to show performance efficiency. However, the precise mechanism of its effect on the performance improvement of the electrodes is still not clear. In this work we investigate alumina-coating-induced effects on the structural dynamics of the active materials in correlation to the modified solid electrolyte interface dynamics. The local structures of coated and uncoated samples at different galvanostatic points are studied by both soft X-ray absorption measurements at the Mn L-edges and O K-edge (in total electron yield mode) and hard X-ray absorption at the Mn K-edge (in transmission mode). The different probing depths of the employed techniques allowed us to study the structural dynamics both at the surface and within the bulk of the active material. We demonstrate that the coating successfully hinders the Mn 3+ disproportionation and, hence, the degradation of the active material. Side products (layered Li 2 MnO 3 and MnO) and changes in the local crystal symmetry with formation of Li 2 Mn 2 O 4 are observed in uncoated electrodes. The role of alumina coating on the stability of the passivation layer and its consequent effect on the structural stability of the bulk active materials is discussed., Competing Interests: The authors declare no competing financial interest., (© 2023 The Authors. Published by American Chemical Society.)

Pressure-induced transformations in glassy GeSe 2 have been studied using the x-ray absorption spectroscopy. Experiments have been carried out at the scanning-energy beamline BM23 (European Synchrotron Radiation Facility) providing a micrometric x-ray focal spot up to pressures of about 45 GPa in a diamond anvil cell. Both Se and Ge K-edge experiments were performed under different hydrostatic conditions identifying the metallization onsets by accurate determinations of the edge shifts. The semiconductor-metal transition was observed to be completed around 20 GPa when neon was used as a pressure transmitting medium (PTM), while this transition was slightly shifted to lower pressures when no PTM was used. Accurate double-edge extended x-ray absorption fine structure (EXAFS) refinements were carried out using advanced data-analysis methods. EXAFS data-analysis confirmed the trend shown by the edge shifts for this disordered material, showing that the transition from tetrahedral to octahedral coordination for Ge sites is not fully achieved at 45 GPa. Results of present high pressure EXAFS experiments have shown the absence of significant neon incorporation into the glass within the pressure range up to 45 GPa., (Creative Commons Attribution license.)