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Cerebral ischemia-reperfusion injury (CIRI) is the predominant cause of neurological disability after cardiac arrest/cardiopulmonary resuscitation (CA/CPR). The endoplasmic reticulum stress (ERs)-induced apoptosis plays an important role in neuronal survival/death in CIRI. Our previous studies reported that the extracellular signal-regulated kinase (ERK) inhibitor, PD98059, alleviates CIRI after CA/CPR. Whether ERs-induced apoptosis is involved in the neuroprotection of PD98059 remains unknown. This study aims to investigate the effects of ERK inhibition by PD98059 on ERs-induced apoptosis after CIRI in the CA/CPR rat model. The baseline characteristics of male adult Sprague-Dawley (SD) rats in all groups were evaluated before CA/CPR. The SD rats that survived from CA/CPR were randomly divided into 3 groups (n=12/group): normal saline group (1 ml/kg), dimethylsulfoxide (DMSO, the solvent of PD98059, 1 ml/kg) group, PD98059 group (0.3 mg/kg). Another 12 SD rats were randomly selected as the Sham group. Twenty-four hours after resuscitation, neural injury was assessed by survival rate, neurological deficit scores (NDS) and Nissl staining; apoptosis of brain cells was detected using terminal deoxynucleotidyl transferase dUTP nick end labeling (TUNEL) staining; mRNA expression and protein levels of ERs-related protein BIP, PERK, ATF4 and CHOP were checked with RT-PCR and Western Blot. The results showed that there were no significant differences in baseline characteristics before CA/CPR among all groups. PD98059 significantly improved survival rate and NDS, increased the Nissl bodies in neurons, reduced apoptosis, downregulated the mRNA transcription and expression levels of BIP, PERK, ATF4 and CHOP at 24 h after CA/CPR. Our results demonstrate that inhibition of ERK by PD98059 alleviates ERs-induced apoptosis via BIP-PERK-ATF4-CHOP signaling pathway and mitigates CIRI in the CA/CPR rat model.

To investigate whether anion gap (AG) can act as a potentially predictive biomarker in recoveries of neurological and cognitive functions.A total of 89 patients with intracerebral hemorrhage (ICH) were recruited. Of these, 68 and 21 patients were categorized into screening cohort and validation cohort, respectively. In the screening cohort, patients were categorized into three groups, according to the serum AG levels at admission. We dynamically recorded AG levels. Neurological and cognitive functions were assessed using Glasgow coma scale (GCS), Glasgow outcome scale (GOS) and mini-mental state examination (MMSE) scale at different time points. Furthermore, in the validation cohort, 9 patients with increased AG level underwent interventions to rectify the electrolyte imbalance.In the screening cohort, statistical differences were observed for respiratory diseases (p=0.029) among the three groups. The number of patients in the ≥16 mmol/L group (59.3%) was higher than that in the other groups. The mean scores of GCS in the ≥16 mmol/L group were lower than those in the other groups. The AG levels at admission had significant associations with 180-day GOS (p=0.043) and 180-day MMSE (p=0.001). Among them, the mean scores of the 180-day GOS and 180-day MMSE were lower in the ≥16 mmol/L group than in the other groups. In the validation cohort, AG intervention promoted recoveries of neurological and cognitive functions when compared to those without AG interventions.AG is a potentially predictive biomarker for the long-term outcomes of ICH patients, and rectifying AG at admission improves the outcomes.

OBJECTIVE: To investigate the effect of a noval radio-frequency atmospheric-pressure glow discharge (RF-APGD) plasma jet on crosslinking of dentin collagen. METHODS: (1) Twenty intact third molars were collected. The middle dentin discs were prepared for each tooth by low-speed water-cooled Isomet saw, and then immersed in 10% (mass fraction) H(3)PO(4) solution for 16 h to obtain fully demine-ralized dentin collagen. The twenty dentin discs were then randomly divided into five groups. The control group was untreated while the four experimental groups were treated by plasma jet with gas temperature of 4 ℃ for different times (20 s, 30 s, 40 s, and 50 s). The structure and crosslinking degree of dentin collagen were characterized by attenuated total reflection-Fourier transform infrared spectroscopy. The surface morphology of demineralized dentin was observed by scanning electron microscope, and the microstructure was observed by transmission electron microscope. (2) Fourty non-caries third molars were collected to prepare 5 g fine dentin powder, then completely demineralized with 10% H(3)PO(4) solution. The control group was untreated, while the four experimental groups were treated by plasma jet for 20 s, 30 s, 40 s and 50 s. The crosslinking degree of each group was determined by ninhydrin colorimetric method. (3) Forty intact third molars were collected to obtain dentin strips. Only two central symmetrical dentin strips (nasty 80) were taken from each tooth and immersed in 10% H(3)PO(4) solution for 16 h to obtain fully demineralized dentin collagen. Eighty dentine collagen fiber strips were randomly divided into five groups. The control group was untreated and the axial surfaces of dentin collagen fiber strips in the expe-rimental groups were treated with the plasma jet for 20 s, 30 s, 40 s and 50 s. The ultimate tensile strength of dentin was measured by universal mechanical machine. RESULTS: (1) The surface morphology of demineralized dentin observed by scanning electron microscope showed that the network structure of collagen fibers on the surface of demineralized dentin treated with the plasma jet for 20 s, 30 s and 40 s could maintain the uncollapsed three-dimensional structure, and part of the microstructure was destroyed after plasma jet treated for 50 s. After being treated by plasma jet for 20 s, 30 s and 40 s, the three-dimensional structure was uncollapsed, and the typical periodic transverse pattern of natural type Ⅰ collagen fiber could be seen. The results of infrared spectra showed that the secondary conformation of dentin collagen fibers was the same as that of the control group after being treated with the plasma jet, and the intensity of amide band was significantly increased after being treated for 30 s and 40 s. (2) The results of ninhydrin crosslinking test showed that the crosslinking ratio of dentin collagen treated by plasma jet for 30 s and 40 s was the highest, and the difference was statistically significant (P < 0.05). (3) The results of dentin ultimate tensile strength showed that the control group was (1.67±0.24) MPa, and the plasma jet treated 20 s, 30 s, 40 s and 50 s groups were (4.21±0.15) MPa, (7.06±0.30) MPa, (7.32±0.27) MPa, and (6.87±0.17) MPa, which were significantly different from that of the control group (P < 0.05). CONCLUSION: The novel RF-APGD plasma jet treatment can promote the crosslinking degree of demineralized dentin collagen and improve their ultimate tensile strength.

Partially-depleted silicon-on-insulator (PDSOI) MOSFETs with full dielectric isolation structure are widely used in the high temperature field of 225 °C, but affected by the threshold voltage and carrier mobility, the saturated output current has a rate of change as high as 24.9% at 25 °C–300 °C, which will reduce the working speed and accuracy of the analog circuit. This paper studies the high temperature output current characteristics of ultra-thin body and buried oxide (UTBB) fully-depleted silicon-on-insulator (FDSOI) MOSFETs with the 28 nm low voltage threshold structure. The experimental results show that when the gate voltage of the device is constant, the saturation current change of 28 nm short-channel FDSOI device is 1.93% in the temperature range from 25 °C to 300 °C, which is 12.9 times more stable than that of 0.13 μm PDSOI device, 4.5 times and 8.4 times higher than that of 0.3 μm and 2 μm long-channel FDSOI device. When the gate voltage of the device drifts from the zero-temperature coefficient (ZTC) point by ±10%–±20%, the output current change of the short-channel FDSOI device is still the lowest. It is proved by theory and simulation that the low temperature change rate of the carrier velocity of the short-channel FDSOI device is the main factor affecting the stability of the output current. From the analysis of the saturation current model and the ZTC operating point, reducing the gate operating voltage of the device or increasing the threshold voltage of the device can further improve the stability of the output current at high temperatures. The research in this paper proves that the 28 nm UTBB FDSOI device has good high temperature saturation current stability, which can well meet the output current stability requirements of high temperature analog circuits.

Partially depleted silicon-on-insulator (PDSOI) MOSFETs are widely used in 225 °C high-temperature electronic system applications with integrated circuits. But the process node stays at 0.5 µm for a long time and no further breakthrough can be achieved. This paper reports the high-temperature characteristics of 28 nm ultra-thin body and box fully depleted SOI (FDSOI) CMOS transistors with low threshold voltage (LVT) structure. Experimental results demonstrate that V t shift changes with temperature as low as 0.59 mV °C−1, the subthreshold slope (SS) is 145.35 mV dec−1 at 300 °C, and the related parameters are optimized by 3.7 times and 2.2 times respectively compared with 0.13 µm PDSOI. Combined with theoretical analysis, it is proved that the ultra-body FDSOI has an LVT drift rate and better SS than 0.13 µm PDSOI at high temperature. The advantage of this performance is mainly due to the difference between α VT α VT and β VT coefficients related to the back gate effect. Under negative back-gate bias, the I on/l off ratio can be increased by two orders of magnitude without affecting V t shift changes with temperature, this proves that the FDSOI is capable of high-temperature applications above 300 °C. This paper provides substantial support for future high-temperature system integrated circuits from the micro-scale to the nano-scale.