1. Charge sensing properties of monolithic CMOS pixel sensors fabricated in a 65 nm technology
- Author
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Szymon Bugiel, Andrei Dorokhov, Mauro Aresti, Jerome Baudot, Stefania Beole, Auguste Besson, Roma Bugiel, Leonardo Cecconi, Claude Colledani, Wenjing Deng, Antonello Di Mauro, Ziad El Bitar, Mathieu Goffe, Jan Hasenbichler, Geun Hee Hong, Christine Hu-Guo, Kimmo Jaaskelainen, Alex Kluge, Magnus Mager, Davide Marras, Joao de Melo, Magdalena Munker, Hung Pham, Francesco Piro, Felix Reidt, Gianluca Aglieri Rinella, Roberto Russo, Valerio Sarritzu, Serhiy Senyukov, Walter Snoeys, Miljenko Suljic, Gianluca Usai, Isabelle Valin, Marc Winter, and Yitao Wu
- Subjects
WP5 - Abstract
In this work the initial performance studies of the first small monolithic pixel sensors dedicated to charged particle detection, called CE-65, fabricated in the 65 nm TowerJazz Panasonic Semiconductor Company are presented. The tested prototypes comprise matrices of 64 × 32 square analogue-output pixels with a pitch of 15 μm. Different pixel types explore several sensing node geometries and amplification schemes, which allows for various biasing voltage of the detection layer and hence depletion conditions and electric field shaping. Laboratory tests conducted with a 55Fe source demonstrated that the CE-65 sensors reach equivalent noise charge in the 15 to 25 e− range and excellent charge collection efficiencies. Charge sharing is substantial for standard diodes, but can be largely suppressed by modifying their design. Depletion of the thin sensitive layer saturates at a reverse diode bias of about 5 V.
- Published
- 2022