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Two-dimensional conjugated metal-organic frameworks (2D c-MOFs) are emerging as a unique class of 2D electronic materials. However, intrinsically semiconducting 2D c-MOFs with gaps in the Vis-NIR and high charge carrier mobility have been rare. Most of the reported semiconducting 2D c-MOFs are metallic (i.e. gapless), which limits their use in applications where larger band gaps are needed for logic devices. Herein, we design a new D2h-geometric ligand, 2,3,6,7,11,12,15,16-octahydroxyphenanthro(9,10b)triphenylene (OHPTP), and synthesize the first example of a 2D c-MOF single crystal (OHPTP-Cu) with a rhombohedral pore geometry after coordination with copper. The continuous rotation electron diffraction (cRED) analysis unveils the orthorhombic crystal structure at the atomic level with a unique AB layer stacking. The resultant Cu2(OHPTP) is a p-type semiconductor with an indirect band gap of about 0.50 eV and exhibits high electrical conductivity of 0.10 S cm-1 and high charge carrier mobility of 10.0 cm2V-1s-1. Density-functional theory calculations underline the predominant role of the out-of-plane charge transport in this semiquinone-based 2D c-MOFs., Comment: 11 pages 5 figures

Here, we analyze in a non-contact fashion charge carrier mobility as a function of injection level and temperature in silicon by time resolved THz spectroscopy (TRTS) and parametrize our data by the classical semi-empirical models of Klaassen and Dorkel & Leturcq. Our experimental results are in very good agreement with the pioneering works of Krausse and D\"annhauser analyzing this phenomena by employing contact-based methods. This agreement, that validates our methodology, can only be achieved by considering charge carrier diffusion effects following above bandgap near-surface pump photo-excitation of the sample. From our results, obtained over a large range of injection levels, we conclude that the model of Klaassen is the best on describing the collected data at room temperature. Furthermore, we analyze by TRTS the dependence of charge carrier mobility with temperature for a fixed injection level. Once more, the parametrization made by the classical model of Klaassen describe our data appropriately even without the necessity of applying any fitting parameters (just with the charge carrier density as an input). In this respect, our work supports the validity of the model and parametrization proposed by Klaassen, and also illustrate how TRTS can be reliably employed for the quantitative determination of mobility in semiconductors as a function of key parameters as injection level and temperature., Comment: 14 pages, 3 figures