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Your search keyword '"Balestra, Francis"' showing total 17 results
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17 results on '"Balestra, Francis"'

7. Modelling of self-heating effect in FDSOI and bulk MOSFETs operated in deep cryogenic conditions

Author

Ghibaudo, Gérard, Cassé, M., Maria, F. Serra Di Santa, Theodorou, C., Balestra, Francis, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), and Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)

Subjects
Materials Chemistry, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Electrical and Electronic Engineering, Condensed Matter Physics, ComputingMilieux_MISCELLANEOUS, Electronic, Optical and Magnetic Materials
Abstract

International audience

Published
2022
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8. Roadmapping of Nanoelectronics for the New Electronics Industry.

Author

Gargini, Paolo, Balestra, Francis, and Hayashi, Yoshihiro

Subjects
INDUSTRIAL electronics, ELECTRONIC industries, NANOELECTRONICS, COMPUTER industry, SYSTEM integration, SERVER farms (Computer network management)
Abstract

This paper is dedicated to a review of the international effort to map the future of nanoelectronics from materials to systems for the new electronics industry. The following sections are highlighted: the Roadmap structure with the international teams, the methodology and historical evolution, the various eras of scaling, the new ecosystems and computer industry, the evolving supply chain, the development of SoC and SiP, the advent of the Internet of Everything and the 5G communications, the dramatic increase of data centers, the power challenge, the technology fusion, heterogeneous and system integration, the emerging technologies, devices and computing architectures, and the main challenges for future applications. [ABSTRACT FROM AUTHOR]

Published
2022
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9. (Invited) Cryogenic Electronics for Quantum Computing ICs: What Can Bring FDSOI

Author

Casse, Mikael, Cardoso Paz, Bruna, Bergamaschi, Flavio, Ghibaudo, Gérard, Balestra, Francis, and Vinet, Maud

Abstract

We present an overview of the performances of FDSOI CMOS transistors down to deep cryogenic temperature, highlighting in particular the benefits brought by the back bias. FDSOI transistors are operational from room temperature down to temperature as low as 100mK. The main DC electrical characteristics, as well as variability properties and reliability are measured and analyzed. We also point out specific behaviors appearing at cryogenic temperature, and discuss their physical origin and modeling.

Published
2023
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12. SiC and GaN Power Devices

Author

Zekentes, Konstantinos, Veliadis, Victor, Ryu, Sei-Hyung, Vasilevskiy, Konstantin, Pavlidis, Spyridon, Salemi, Arash, Zhang, Yuhao, Iacopi, Francesca, editor, and Balestra, Francis, editor

Published
2023
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17. Comprehensive Kubo-Greenwood modelling of FDSOI MOS devices down to deep cryogenic temperatures

Author

Christoforos G. Theodorou, F. Balestra, Gerard Ghibaudo, L. Contamin, Mikael Casse, F. Serra di Santa Maria, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), and balestra, francis

Subjects
Materials science, business.industry, Scattering, [SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Gate length, Silicon on insulator, Limiting, Condensed Matter Physics, Electronic, Optical and Magnetic Materials, MOSFET, Materials Chemistry, Optoelectronics, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Electrical and Electronic Engineering, business, ComputingMilieux_MISCELLANEOUS
Abstract

A comprehensive Kubo-Greenwood modelling of FDSOI MOS devices is carried out down to deep cryogenic temperatures. It is found that a single set of mobility parameters is only needed to fit the device characteristics versus temperature for long channel devices. Instead, in short channels, the neutral scattering mobility component µN is found to decrease at small gate length due to the increased presence of neutral defects close to source/drain ends whatever the temperature.

Published
2022
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