Search

Your search keyword '"Antonov, I. N."' showing total 15 results
Start Over Author "Antonov, I. N." Publication Year Range Last 3 years
15 results on '"Antonov, I. N."'

4. Scanning Kelvin Probe Microscopy Investigation of Optically Induced Charge in Au Nanoparticles Embedded into ZrO2(Y) Films.

Author

Filatov, D. O., Novikov, A. S., Shenina, M. E., Antonov, I. N., Nezhdanov, A. V., Kazantseva, I. A., and Gorshkov, O. N.

Subjects
SCANNING probe microscopy, GOLD nanoparticles, ELECTRIC charge, THIN films, NANOPARTICLES
Abstract

Accumulation and relaxation of optically induced electric charge in ZrO2(Y) films with embedded single-layered arrays of Au nanoparticles (NPs) of 2–3 nm in diameter have been studied subject to the depth of the Au NPs in the ZrO2(Y) layers and the optical excitation power at the wavelengths of 473 and 633 nm by Scanning Kelvin Probe Microscopy (SKPM). [ABSTRACT FROM AUTHOR]

Published
2024
Full Text
View/download PDF

5. Resistive Switching in Individual Ferromagnetic Filaments in ZrO2(Y)/Ni Based Memristive Stacks.

Author

Antonov, D. A., Filatov, D. O., Novikov, A. S., Kruglov, A. V., Antonov, I. N., Zdoroveyschev, A. V., and Gorshkov, O. N.

Subjects
MAGNETIC force microscopy, ATOMIC force microscopes, DIELECTRIC films, ATOMIC force microscopy, FIBERS
Abstract

The resistive switching effect in individual ferromagnetic filaments in memristive stacks based on ZrO2(Y)/Ni functional layers was studied experimentally. A conductive probe of an atomic force microscope played a role of a movable top electrode of a virtual memristive stack. The features of bipolar-type resistive switching found were related to the rapture and restoring of the filaments containing Ni atoms in the ZrO2(Y) dielectric films and are probably caused by different degree of metallization of the filaments. The filaments fromed were manifested in the images obtained by magnetic force microscopy as single-domain ferromagnetic particles. [ABSTRACT FROM AUTHOR]

Published
2024
Full Text
View/download PDF

6. Resistive switching of memristors base on epitaxial structures p-Si/p-Ge/n-=SUP=-+-=/SUP=--Si(001) with Ru and Ag electrodes

Author

null Kruglov A. V., null Antonov I. N., null Kotomina V. E., null Shenina M. E., null Denisov S. A., null Shengurov V. G., null Gorshkov O. N., and null Filatov D. O.

Abstract

The electrical parameters of the prototype memristors based on p-Si/p-Ge/n+-Si(001) epitaxial heterostructures with Ag and Ru electrodes have been studied. The memristors with Ru electrodes demonstrated smaller electroforming voltage and greater ratio of currents in the low and high resistance values as compared to the memristors with Ag electrodes. Also, an inversion of the resistance switching polarity was observed in the memristors with Ru electrodes. Thses effects originate from a higher mobility of Ru3+ ions in the threading dislocations in the p-Si/p-Ge layers due to smaller ion radius. Keywords: Memristor, SiGe epitaxial layers, resistance switching.

Published
2023
Full Text
View/download PDF

12. Effect of internal noise on the relaxation time of an yttria stabilized zirconia-based memristor

Author

Filatov D. O., Koryazhkina M. N., Novikov A. S., Shishmakova V. A., Shenina M. E., Antonov I. N., Gorshkov O. N., Agudov N. V., Carollo A., Valenti D., Spagnolo B., Filatov D.O., Koryazhkina M.N., Novikov A.S., Shishmakova V.A., Shenina M.E., Antonov I.N., Gorshkov O.N., Agudov N.V., Carollo A., Valenti D., and Spagnolo B.

Subjects
Yttria stabilized zirconia, Metastability, Settore FIS/02 - Fisica Teorica, Modelli E Metodi Matematici, General Mathematics, Applied Mathematics, Beneficiary role of noise, General Physics and Astronomy, Resistive switching, Statistical and Nonlinear Physics, Memristor, Noise induced stabilization
Abstract

The effects of temperature on the switching kinetics of an yttrium-stabilized zirconia-based memristor from a low-resistance state to a high-resistance state have been experimentally investigated. It was found that the memristor relaxation time depends on the temperature in a non-monotonous way, with a maximum observed at the temperature close to 55 °C. This nonmonotonic behavior is a signature of the noise-enhanced stability phenomenon observed in all physical and complex systems characterized by metastable states.

Published
2022
Full Text
View/download PDF

13. Resistive Switching in Individual Ferromagnetic Filaments in ZrO-=SUB=-2-=/SUB=-(Y)/Ni Based Memristive Stacks

Author

null Gorshkov O. N., null Zdoroveyschev A. V., null Antonov I. N., null Kruglov A. V., null Novikov A. S., null Filatov D. O., and null Antonov D. A.

Abstract

The resistive switching effect in individual ferromagnetic filaments in memristive stacks based on ZrO2(Y)/Ni functional layers was studied experimentally. A conductive probe of an atomic force microscope played a role of a movable top electrode of a virtual memristive stack. The features of bipolar-type resistive switching found were related to the rapture and restoring of the filaments containing Ni atoms in the ZrO2(Y) dielectric films and are probably caused by different degree of metallization of the filaments. The filaments fromed were manifested in the images obtained by magnetic force microscopy as single-domain ferromagnetic particles. Keywords: memristor, resistive switching, atomic force microscopy, ferromagnetic filaments.

Published
2022
Full Text
View/download PDF

14. Investigation of the effect of optical radiation on resistive switching of MIS-structures based on ZrO-=SUB=-2-=/SUB=-(Y) on Si(001) substrates with Ge nanoislands

Author

null Shengurov V. G., null Chalkov V. Yu., null Denisov S. A., null Gorshkov A. P., null Ershov A. V., null Kruglov A.V., null Antonov I. N., null Shenina M. E., null Filatov D. O., and null Koryazhkina M. N.

Abstract

The effect of optical radiation in the visible and near-infrared bands on resistive switching of a MOS stack based on ZrO2(Y) film on an n-Si(001) substrate with self-assembled Ge nanoislands on its surface has been studied. An increase in the resistive switching logical gap was observed upon the photoexcitation, in particular, when the photon energies were smaller than the Si band gap. The effect was associated with the impact of the photo-emf at the Si/Ge/ZrO2(Y) interface. In the latter case, the effect is associated with spatially indirect interband optical transitions in Ge nanoislands. Keywords:: memristor, photo-induced resistive switching, yttria-stabilized zirconia, MIS-structure, Ge/Si nanoislands.

Published
2022
Full Text
View/download PDF

15. A mechanism of effect of optical excitation on resistive switching in ZrO2(Y) films with Au nanoparticles.

Author

Novikov, A S, Filatov, D O, Shenina, M E, Antonov, I N, Antonov, D A, Nezhdanov, A V, Vorontsov, V A, Pavlov, D A, and Gorshkov, O N

Subjects
KELVIN probe force microscopy, DIELECTRIC films, METALLIC films, METAL nanoparticles, OPTICAL switching
Abstract

A mechanism of effect of optical excitation on resistive switching of dielectric films with embedded metal nanoparticles (MNPs) has been proposed. The mechanism is related to a charging of the MNPs due to internal photoemission of electrons from the MNPs, which results in an increasing of the electric field strength at the MNP surfaces that, in turn, promotes the rupture and restoring of the conductive filaments in the dielectric film. The increasing of the electric filed strength due to the MNP charging as a function of the MNP sizes and positions inside the dielectric films was evaluated using a simple model taking into account the mirror charges on the conductive electrodes of a memristor stack. The single electron charging was found to be essential at small MNP radii (∼1 nm). The proposed mechanism was confirmed experimentally by studying the photoexcitation-induced charging of Au MNPs (with average radius 1.6–1.8 nm) embedded into a 10 nm thick ZrO2(Y) film by Kelvin probe force microscopy. [ABSTRACT FROM AUTHOR]

Published
2021
Full Text
View/download PDF

Catalog

Books, media, physical & digital resources
See catalog results