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A novel NIR emitting scintillator with 825 nm was developed by doping Sm2+ in Cs 4 Eu(Br,I) 6 crystal. The single crystals of Cs 4 Eu(Br,I) 6 :Sm were successfully grown by the Bridgman method. The crystal structure and valence state was approved by XRD and XPS methods. The luminescence properties and energy transfer were systematically investigated. The energy transfer mechanism is variable for different Sm2+ concentration. The PL decay profiles show that the Sm2+-related emission has fast decay of nanosecond. The proportion of fast decay can be tunable by adjusting Sm2+ doped concentration. The Sm2+ doped europium -host material will have a potential application for unclear detection as near-infrared (NIR) scintillators. • The novel NIR emitting Cs 4 Eu(Br,I) 6 :Sm scintillation crystals were successfully grown by the Bridgman method and the luminescence properties is tunable. • The proportion of nonradiative energy transfer from Eu2+ to Sm2+ was improved and the PLQY of Sm2+-related is up to 42.1%. • The fast decay time component of Sm2+ (50 ns) is up to 31.8% for Cs 4 Eu(Br,I) 6 : 3 mol%Sm crystal. • The proposed Sm2+ doped europium -host material principle is an effective method to develop near-infrared (NIR) scintillators for nuclear radiation detection. [ABSTRACT FROM AUTHOR]

With the rapid development of silicon-based light detectors with high detection efficiency and long-wavelength sensitivity, the development of near-infrared scintillation crystals has become a hotspot. Especially, the Sm2+ doped europium-based halide crystals exhibit excellent near-infrared luminescence properties. In this paper, Cs4 EuI6: Sm near-infrared scintillation crystals with a size of cm-level were successfully prepared by Bridgman method. The composition and structure were discussed by XRD, XPS and ICP-OES methods, indicating that the Sm2+ was introduced and has no obvious effect on the crystal structure of the matrix. Under ultraviolet and X-ray excitation, the crystal has two luminescence centers (Eu2+ and Sm2+), and the emission peaks are located at 450 and 840 nm, respectively, corresponding to the 5d→4f luminescence of Eu2+ and Sm2+. The decay time of Eu2+ and Sm2+ is at the level of microsecond under ultraviolet excitation. The results show that the emission wavelength gradually varies from blue to near infrared as Sm2+ doping concentration increased. The effects of Sm2+ concentration on the luminescence properties, Eu2+ -Sm2+ energy transfer and decay time of the crystals were also studied, which means that the luminescence properties can be tuned by adjusting the Sm2+ doping concentration. [ABSTRACT FROM AUTHOR]

In this work, an anion-alloying strategy using chloride substitution is used to improve the gamma response performance of cutting-edge Cs 2 LiLaBr 6 :Ce single crystal scintillators. Single crystals of Cs 2 LiLa(Br , Cl) 6 :Ce (CLLBC:Ce) with a size of Ф12 mm × 50 mm were successfully grown by the Bridgman method. The effects of chloride substitution amount on crystal structure, band structure, luminescence properties and the scintillation properties were systematically investigated. The light yield and energy resolution of CLLB:Ce were enhanced as the increase of Cl− content. The highest light yield and optimal energy resolution were achieved on the Cs 2 LiLaBr 4 Cl 2 :Ce, about 86% of the commercial LaBr 3 :Ce single crystal and 4.1% at 662 keV. On a basis of the results of first-principle calculation and pure optical method, the band structures of Cs 2 LiLa(Br,Cl):Ce were constructed, indicating a tendency of band-gap to increase as the Cl− content increases. The origin of light yield improvement was also proposed. • The strategy of chloride substitution is used to improve the performance of Cs 2 LiLaBr 6 :Ce single crystal scintillators. • The results of first-principle calculation and pure optical method indicate that the band-gap becomes bigger as the Cl− content increases. • Cs 2 LiLaBr 4 Cl 2 :Ce shows the highest light yield and optimal energy resolution, about 86% of the commercial LaBr 3 :Ce single crystal and 4.1% at 662 keV. • The origin of light yield improvement was also proposed. [ABSTRACT FROM AUTHOR]