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WTe2, a low-symmetry transition metal dichalcogenide, has broad prospects in functional device applications due to its excellent physical properties. When WTe2 flake is integrated into practical device structures, its anisotropic thermal transport could be affected greatly by the substrate, which matters a lot to the energy efficiency and functional performance of the device. To investigate the effect of SiO2/Si substrate, we carried out a comparative Raman thermometry study on a 50 nm-thick supported WTe2 flake (with κzigzag = 62.17 W·m−1·K−1 and κarmchair = 32.93 W·m−1·K−1), and a suspended WTe2 flake of similar thickness (with κzigzag = 4.45 W·m−1·K−1, κarmchair = 4.10 W·m−1·K−1). The results show that the thermal anisotropy ratio of supported WTe2 flake (κzigzag/κarmchair ≈ 1.89) is about 1.7 times that of suspended WTe2 flake (κzigzag/κarmchair ≈ 1.09). Based on the low symmetry nature of the WTe2 structure, it is speculated that the factors contributing to thermal conductivity (mechanical properties and anisotropic low-frequency phonons) may have affected the thermal conductivity of WTe2 flake in an uneven manner when supported on a substrate. Our findings could contribute to the 2D anisotropy physics and thermal transport study of functional devices based on WTe2 and other low-symmetry materials, which helps solve the heat dissipation problem and optimize thermal/thermoelectric performance for practical electronic devices. [ABSTRACT FROM AUTHOR]

Currently, epoxy-based composites are widely used in thermal management. However, with the development of complex and high power-density electronic devices, the thermal properties of the composites need to be improved. Inspired by the unique galls-leaf structure of Distylium chinense, a graphene-diamond framework (GRDF) is developed by a simple filtration method. A through-plane and in-plane thermal conductivity of 22.7 and 21.8 Wm−1 K−1, respectively, have been achieved by forming epoxy-based composites with the GRDF annealed at 3000 °C. The result is 70% higher than the best-reported value for epoxy-based composites prepared by vacuum filtration under a filler content of 43 wt%. Such high thermal conductivity remains unchanged (within 2%) in a temperature range from 25 to 100 °C. Based on various microscopic characterizations, the diamond particles evenly distribute in a framework formed by graphene sheets, which bridge the gaps in the framework and improve its structural integrity. High-temperature annealing converts most diamond particles to graphite, which further enhances the thermal properties of the composite. The observations provide a feasible way for developing polymer-based composite with high thermal conductivity, which could meet the ever-increasing demands for heat dissipation in high-power electronics. [Display omitted] • The epoxy composite with a through-plane thermal conductivity of 22.7 Wm−1K−1 is achieved under 43.2 wt.% filler filling. • The composites show a high degree of isotropic thermal properties, and a good thermal stability. • The high thermal conductivity of the composite is due to diamond filling and high-temperature graphitization. [ABSTRACT FROM AUTHOR]