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The monoclinic semiconductor GeP is a new class of Group IV–V layered material, and it shows attractive anisotropic optical and electronic properties. In this paper, we investigate the structural and electronic evolution of layered GeP under pressure, using in situ x-ray diffraction, Raman and infrared spectra, and the density functional theory. All characterization methods reveal that the pressure causes two obvious phase changes. One isostructural transition is observed around 6 GPa. Above 21 GPa, another crystalline-to-amorphous transformation is obtained. It is worth noting that the high-pressure amorphous state can be retained at ambient conditions after the pressure is released. In addition, the pressure-induced red-shift of absorbance edge suggests its bandgap decreases with pressure. This result indicates that pressure has a significant effect on GeP. Meanwhile, it also provides a method for obtaining amorphous GeP, which is of interest to the energy storage community as it is a potential anode material for lithium-ion batteries. [ABSTRACT FROM AUTHOR]

• Systematic study of 3d transition metal-doped CNTs. • V(Cr, Mn, Co)-doped CNTs show spin-polarization effects. • The 3d transition metal doping makes a big difference to the energy band. • 3d transition metal doping increases the quantum capacitance. • Ni-CNT has the largest quantum capacitance near zero potential. Supercapacitors are valued as one of the new green energy storage devices, but the low energy density limits the wide application of supercapacitors. In this paper, the effects of 3d transition metal doped on electronic structure and quantum capacitance of carbon nanotubes are investigated using DFT. The calculations show that elemental doping has caused the break-up of two degenerate states near the Fermi level, quasi-local state changes in the energy band, and the creation of new energy bands. The doping of V(Cr, Mn, Co) causes spin polarization in the energy band. The change in energy band affects the density of states near the Fermi level, effectively increasing the quantum capacitance and surface charge density of the carbon nanotube electrode. The quantum capacitance of Ni-doped carbon nanotubes is the largest, at 59.74 µF/cm2. In the range of water stability, Ti(V, Gr, Mn, Co)-CNT are suitable for use as electrode materials in symmetrical double layer supercapacitors. Sc(Fe, Cu, Zn)-CNT is suitable for use as anode materials in asymmetric double layer supercapacitors. Ni-CNT is suitable for use as a cathode material for asymmetric double layer supercapacitors. This study verifies the feasibility of 3d transition metal doping to improve the quantum capacitance of carbon nanotube electrodes. [Display omitted] [ABSTRACT FROM AUTHOR]