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The goal of this paper is to characterize the crystal quality of the various ErF3 concentrations doped BaF2 crystals and to study the influence of the dopant concentration on the etch pits morphology and dislocation density. Various concentrations ErF3 −doped BaF2 crystals have been grown using the conventional Bridgman method. Colorless, transparent crystals were obtained in graphite crucible in vacuum (∼ 10−1 Pa) using a shaped graphite furnace. The crystals have been cooled to room temperature using a well-established procedure. In order to investigate the etch pits morphology and the dislocations density we used the etching method. The method consists in immersing a cleaved sample in 2N HCl at 60°C for 2 minutes. Small pits are developed at the emergence points of the dislocations. The etch pits have hexagonal shapes. The dislocations density depends on the Er3+ concentration and as a function of growth direction. [ABSTRACT FROM AUTHOR]