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• • The large-sized 4H-SiC single crystals were grown via sublimation technique. • • Impact of crucible structure on growth behavior was systematically investigated. • • SiC crystal grown in specific crucible exhibits superior characteristics. Silicon carbide (SiC), as the wide bandgap semiconductor, has gradually attracted attention from investigators due to the excellent integrated performance, widely recognized as a revolution in the electronic devices. For these applications, it is crucial to prepare the high-quality SiC crystal ingot by optimizing growth parameters and crucible structures. In this study, the effect of TaC coating and graphite paper on the growth process of SiC ingot were investigated compared to the growth in conventional graphite crucible through modeling and experiment. We demonstrated that the grown crystal using TaC-coated graphite relay ring and graphite paper surrounded the inner wall of powder container shows the superior characteristics in terms of the crystalline perfection and interface shape. In addition, the new crucible structure can provide a low-cost solution to prepare SiC crystal ingot using PVT method. [ABSTRACT FROM AUTHOR]