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Amorphous/crystalline high-entropy-alloy (HEA) composites show great promise as structural materials due to their exceptional mechanical properties. However, there is still a lack of understanding of the dynamic nanoindentation response of HEA composites at the atomic scale. Here, the mechanical behavior of amorphous/crystalline HEA composites under nanoindentation is investigated through a large-scale molecular dynamics simulation and a dislocation-based strength model, in terms of the indentation force, microstructural evolution, stress distribution, shear strain distribution, and surface topography. The results show that the uneven distribution of elements within the crystal leads to a strong heterogeneity of the surface tension during elastic deformation. The severe mismatch of the amorphous/crystalline interface combined with the rapid accumulation of elastic deformation energy causes a significant number of dislocation-based plastic deformation behaviors. The presence of surrounding dislocations inhibits the free slip of dislocations below the indenter, while the amorphous layer prevents the movement or disappearance of dislocations towards the substrate. A thin amorphous layer leads to great indentation force, and causes inconsistent stacking and movement patterns of surface atoms, resulting in local bulges and depressions at the macroscopic level. The increasing thickness of the amorphous layer hinders the extension of shear bands towards the lower part of the substrate. These findings shed light on the mechanical properties of amorphous/crystalline HEA composites and offer insights for the design of high-performance materials. [ABSTRACT FROM AUTHOR]

A novel strategy is proposed in this work to accelerate proton-coupled electron transfer via phase-engineered amorphous/crystalline interface for advancing overall water splitting. [Display omitted] • Co/Co 2 C crystals have been assembled on amorphous N, S co-doped porous carbon through hydrothermal and calcination process. • The stable biphase structure and amorphous/crystalline interface enhances the conductivity and intrinsic activity. • The adsorption ability of water molecules and intermediates is improved significantly. • This work has pioneered the crystalline/amorphous phase in electrocatalysts and provided new insights into phase engineering. Traditional phase engineering enhances conductivity or activity by fully converting electrocatalytic materials into either a crystalline or an amorphous state, but this approach often faces limitations. Thus, a practical solution entails balancing the dynamic attributes of both phases to maximize an electrocatalyst's functionality is urgently needed. Herein, in this work, Co/Co 2 C crystals have been assembled on the amorphous N, S co-doped porous carbon (NSPC) through hydrothermal and calcination processes. The stable biphase structure and amorphous/crystalline (A/C) interface enhance conductivity and intrinsic activity. Moreover, the adsorption ability of water molecules and intermediates is improved significantly attributed to the rich oxygen-containing groups, unsaturated bonds, and defect sites of NSPC, which accelerates proton-coupled electron transfer (PCET) and overall water splitting. Consequently, A/C-Co/Co 2 C/NSPC (Co/Co 2 C/NSPC with amorphous/crystalline interface) exhibits outstanding behavior for oxygen evolution reaction (OER) and hydrogen evolution reaction (HER), requiring the overpotential of 240.0 mV and 70.0 mV to achieve 10 mA cm−2. Moreover, an electrolyzer assembled by A/C-Co/Co 2 C/NSPC-3 (anode) and A/C-Co/Co 2 C/NSPC-2 (cathode) demonstrates a low drive voltage of 1.54 V during overall water splitting process. Overall, this work has pioneered the coexistence of crystalline/amorphous phases in electrocatalysts and provided new insights into phase engineering. [ABSTRACT FROM AUTHOR]

This study introduces the development of a novel bio-nano composite via the dispersion of cellulose nanofibers (CNF) in epoxy. The surface of cellulose nanofibers was functionalized using a two-step chemical treatment to enhance dispersion. The interfacial characteristics of CNF were improved using alcohol/acetone treatments. The modified CNF (M-CNF) demonstrated enhanced compatibility and improved dispersion in the epoxy matrix as evidenced by scanning electron microscopy. Based on the analysis of X-ray diffraction patterns, M-CNF did not disturb the crystalline phases at the interface. The results of mechanical testing showed that M-CNF worked as a reinforcing agent in the bio-nano composite. The flexural modulus increased from 1.4 to 3.7 GPa when M-CNF was introduced. A similar trend was observed for tensile strength and impact resistance. The optimum performance characteristics were observed at M-CNF of 0.6%. At higher dosages, some agglomeration was observed, which weakened the interfacial properties. This study promotes sustainability and resource conservation while offering CNF as a sustainable reinforcing agent to develop bio-nano composites. [ABSTRACT FROM AUTHOR]

Although XLPE cables are widely used in power transmission and distribution systems, their insulating properties are susceptible to degradation due to thermal aging. In order to clarify the influence law of the thermal aging process on the structural and dielectric properties of XLPE cables, this paper investigates the thermal aging characteristics of XLPE cables by using polarization and depolarization current measurement. Results show that when the XLPE cable is aged at 140 °C, the crystallinity of the insulation layer appears to increase and then decrease. With the increase in aging time, micron-sized microvoids appear on the surface of the XLPE. At the same time, the DC conductivity and 0.1 Hz dielectric loss factor of the insulating layer increase with the aging time. The average DC conductivity increased from 2.26 × 10−16 S/m for new cables to 4.47 × 10−16 S/m after aging for 432 h, while the dielectric loss increased from 0.11% to 0.42%. The polarization characteristics of thermal-aged cables were further analyzed using the extended Debye model. Results indicate that the time constant of the third branch of the model increased significantly with increasing aging time. A correspondence between this parameter and the thermal aging time of the cable was established. Thermal aging can damage the crystalline structure of XLPE, so that the number of interfaces between the crystalline and amorphous regions of the material increases, resulting in structural damages and a decline in the dielectric properties of the cable insulation. [ABSTRACT FROM AUTHOR]

A major challenge with water splitting technology is to develop highly active and stable electrocatalysts for the oxygen evolution reaction (OER). IrO2 – based electrocatalysts are one of the most active electrocatalysts for proton exchange membrane (PEM) electrolysers, due to their excellent activity for the OER in acidic conditions. However, IrO2 often suffers from dissolution during electrolysis due to phase transitions into more soluble forms. Herein, a range of electrodeposited IrO2 films annealed to different temperatures of up to 500°C are prepared to understand the influence that crystalline/amorphous interfaces have on performance during accelerated degradation tests in concentrated acidic solutions. This study showed that an IrO2 film annealed at 300 °C exhibited the highest catalytic activity with a low overpotential of 150 mV at 10 mA cm−2, the smallest Tafel slope of 51 mV dec−1, with a less progressive decay in activity over a period of 8 h of accelerated degradation testing. This contrasts with both fully amorphous or more crystalline IrO2 films that decayed much more rapidly within 1 h of testing indicating the role that amorphous/crystalline regions have on OER performance. [ABSTRACT FROM AUTHOR]

Conducting oxide interfaces have attracted considerable attention, motivated by both fundamental science and potential for oxide electronic devices. An important gap for maturing such device technology is scalability and routes to control the electronic properties, which can narrow the device engineering space. Here, we demonstrate and explain the mechanisms of highly tunable conductive oxide interfaces. We synthesized amorphous--crystalline Al2O3/SrTiO3 interfaces using the scalable and industry-compatible atomic layer deposition (ALD) technique. An NH3 plasma pretreatment is employed in the ALD chamber, and its duration is used as a tuning parameter for the electrical properties, where a span of three orders of magnitude in the sheet resistance is observed at room temperature. For the most conductive sample, our results are comparable to the highest carrier density values reported for all-crystalline oxide interfaces prepared with state-of-the-art epitaxial growth techniques, such as pulsed laser deposition. We pinpoint the origin of conductivity to oxygen vacancies caused by the SrTiO3 reduction by the NH3 plasma pretreatment. These results present a simple, scalable, and industry-compatible route for realizing conductive oxide interfaces, with a broad parameter space, offering a versatile and flexible toolkit for oxide device engineering. [ABSTRACT FROM AUTHOR]

Nanofibrillated cellulose (NFC) consists of ultrafine cellulose structures in which the fibrils can have widths in the range from about 5 to 100 nm. NFC has been studied and developed in the paper industry, using bleached pulp from wood as the raw material. One of the issues in the application of NFC is their heat resistance to thermal degradation. The production process of NFC results in a decrease in their pyrolysis temperature during the nanofibrillation of bleached pulp; however, the details behind the reason and mechanisms are still unclear. In this study, NFC was prepared from bleached hardwood and softwood pulp by mechanical nanofibrillation using a grinder, and the pyrolysis behavior was investigated. For both bleached pulps, a decrease in the pyrolysis temperature was observed after nanofibrillation. The results suggest that the decrease in the pyrolysis temperature from nanofibrillation is not due to damage of the crystalline cellulose by nano fibrillation, but the damage of the hemicellulose components in the surface of the cellulose microfibrils or the interface between the crystalline cellulose and hemicellulose. If the hemicellulose on the surface of crystalline cellulose could be removed from the NFC, then the decrease in the pyrolysis temperature could be suppressed. [ABSTRACT FROM AUTHOR]

2H MoTe2 (molybdenum ditelluride) has generated significant interest because of its superconducting, nonvolatile memory, and semiconducting of new materials, and it has a large range of electrical properties. The combination of transition metal dichalcogenides (TMDCs) and two dimensional (2D) materials like hexagonal boron nitride (h-BN) in lateral heterostructures offers a unique platform for designing and engineering novel electronic devices. We report the fabrication of highly conductive interfaces in crystalline ionic liquid-gated (ILG) field-effect transistors (FETs) consisting of a few layers of MoTe2/h-BN heterojunctions. In our initial exploration of tellurium-based semiconducting TMDs, we directed our attention to MoTe2 crystals with thicknesses exceeding 12 nm. Our primary focus centered on investigating the transport characteristics and quantitatively assessing the surface interface heterostructure. Our transconductance (gm) measurements indicate that the very efficient carrier modulation with an ILG FET is two times larger than standard back gating, and it demonstrates unipolarity of the device. The ILG FET exhibited highly unipolar p-type behavior with a high on/off ratio, and it significantly increased the mobility in MoTe2/h-BN heterochannels, achieving improvement as one of the highest recorded mobility increments. Specifically, we observed hole and electron mobility values ranging from 345 cm2 V−1 s−1 to 285 cm2 V−1 s−1 at 80 K. We predict that our ability to observe the intrinsic, heterointerface conduction in the channels was due to a drastic reduction of the Schottky barriers, and electrostatic gating is suggested as a method for controlling the phase transitions in the few layers of TMDC FETs. Moreover, the simultaneous structural phase transitions throughout the sample, achieved through electrostatic doping control, presents new opportunities for developing phase change devices using atomically thin membranes. [ABSTRACT FROM AUTHOR]

Phase-Change Materials (PCMs) are widely applied in dynamic optical modulation due to the dramatic changes in their complex refractive index caused by temperature variation. As the functionality varies, the application of a single PCM cannot meet the compact, efficient and broadband needs of optical modulators. In this work, we combine vanadium dioxide (VO2) and a chalcogenide (Ge2Sb2Te5 (GST) or In3SbTe2 (IST)) to obtain a VO2–GST/IST multiple-stack film that is optimized by a genetic algorithm. This film has a wide spectrum and high modulation properties with three self-switchable modes varied by temperature, including transmission, absorption and reflection. The optimal results are an average normal transmittance, absorbance, and reflectance of 0.76, 0.91, 0.86 in 3–5 μm and 0.72, 0.90, 0.90 in 8–14 μm under different temperature ranges. The film enhances the transmission and absorption properties due to the formation of anti-reflective coating and Fabry–Perot resonance. Compared with GST, the film maintains high reflectance due to the metal-like interface reflection of crystalline IST, which exhibits metallic properties. For different polarization states, the film demonstrates great directional insensitivity when the incidence angles vary from 0° to 60°. The designed self-adaptive multistage infrared radiative thermo-optic modulator has promising implications for optical fuse, fiber-optic communication and energy storage fields. [ABSTRACT FROM AUTHOR]

Raman spectroscopy has proven its effectiveness as a highly informative and sensitive method for the nondestructive analysis of layered nanostructures and their interfaces. However, there is a lack of information concerning the characteristic phonon modes and their activity in Si/SiO2 nanostructures. In order to overcome this problem, the phonon states and Raman spectra of several Si/SiO2 superlattices (SL) with layer thicknesses varied within 0.5–2 nm are studied using DFT-based computer modeling. Two types of structures with different interfaces between crystalline silicon and SiO2 cristobalite were studied. A relationship between the phonon states of heterosystems and the phonon modes of the initial crystals was established. Estimates of the parameters of deformation potentials are obtained, with the help of which the shifts of phonon frequencies caused by elastic strains in the materials of the SL layers are interpreted. The dependence of intense Raman lines on the SL structure has been studied. Several ways have been proposed to use this information, both for identifying the type of interface and for estimating the structural parameters. The obtained information will be useful for the spectroscopic characterization of the silicon/oxide interfaces. [ABSTRACT FROM AUTHOR]

The oxide-semiconductor interface is a key element of MOS transistors, which are widely used in modern electronics. In silicon electronics, SiO2 is predominantly used. The miniaturization requirement raises a problem regarding the growing of heterostructures with ultrathin oxide layers. Two structural models of interface between crystalline Si and cristobalite SiO2 are studied by using DFT-based computer modelling. The structures of several Si/SiO2 superlattices (SL), with layer thicknesses varied within 0.5–2 nm, were optimized and tested for stability. It was found that in both models the silicon lattice conserves its quasi-cubic structure, whereas the oxide lattice is markedly deformed by rotations of the SiO4 tetrahedra around axes perpendicular to the interface plane. Based on the analysis of the calculated total energy of SLs with different thicknesses of the layers, an assessment of the interface formation energy was obtained. The formation energy is estimated to be approximately 3–5 eV per surface Si atom, which is close to the energies of various defects in silicon. Elastic strains in silicon layers are estimated at 5–10%, and their value rapidly decreases as the layer thickens. The elastic strains in the oxide layer vary widely, in a range of 1–15%, depending on the interface structure. [ABSTRACT FROM AUTHOR]

The oxidation resistance and tribological behavior of CrAlN/SiN x multilayer films with different interface structures were investigated. The multilayer film exhibited better oxidation resistance than the monolithic CrAlN film after oxidation at 900 °C and 1000 °C for 10 h. The crystalline SiN x sublayer was beneficial to oxidation resistance at 900 °C in contrast to the trend observed after oxidation at 1000 °C. The stacking faults generated in the multilayer film were induced by the oxidation of SiN x. The diffusion mechanism changed from the outward diffusion of cations to an inward diffusion of anions when the temperature was increased to 1000 °C. The multilayer film with a crystalline interface exhibited lower coefficient of friction (COF) and better tribological properties than the CrAlN film and multilayer with an amorphous interface. [ABSTRACT FROM AUTHOR]

The article presents a study which revealed the molecular details of the cellulose chain arrangements on the surfaces of individual cellulose nanocrystals (CNC) using atomic force microscopy (AFM) and molecular dynamics (MD) simulations. Topics discussed include structural characterization of CNCs, 3D-AFM characterization of hydration structures at CNC-water interfaces, and frequency modulation AFM experiments.

• Al matrix composite reinforced by deformable metallic-glass particles was prepared. • Al matrix composite with the interfacial interlayer had a strength-ductility synergy. • Distinct Al-B bond in interfacial interlayer facilitated strong interfacial bonding. • Co-deformation of metallic-glass nanoparticles and matrix rendered high ductility. Metal matrix composites (MMCs) are the materials-of-choice for a large range of important applications under harsh service conditions. However, owing to the high phase contrast between the matrix and the reinforcements, the strength-ductility conflict of MMCs is still outstanding. Here we fabricated a novel aluminum (Al) matrix composite reinforced by deformable, cobalt-zirconium-boron (CoZrB) metallic glass nanoparticles. The amorphous CoZrB/Al composite with only 2.0 vol.% particle reinforcements possessed a uniaxial tensile strength of 387.0 ± 1.2 MPa, showing over 80 % improvement over the unreinforced pure Al matrix at a similar uniform elongation. The strength-ductility synergy of the composite was also significantly superior to that of the composite reinforced by fully crystallized nanoparticles. These findings were rationalized by the unique multi-functionality of the amorphous particle/matrix interfaces, which effectively transferred the load from the matrix to the particles, coordinated the co-deformation of the nanoparticles and the matrix, and imparted a transgranular fracture mode in the composite with extensive matrix plastic deformation. The methodology developed in this study was shown to be generally effective for other matrix and metallic glass nanoparticle compositions, and our work may shed new light on the development of high-performance metal matrix composites for advanced structural applications. [Display omitted] [ABSTRACT FROM AUTHOR]

[Display omitted] • The heterostructure was induced to enhance triple-functional electrocatalysis. • The surface reconstruction was revealed to enhance electrocatalytic oxidation. • The favorable adsorption of intermediates led to the improved electrocatalysis. Rational design of non-precious metal-based catalysts for value-added chemicals production is crucial but still challenging. Herein, a trifunctional electrocatalyst with heterostructures is developed via phosphating and NaBH 4 pretreatment of the pristine ZIF-L for overall water splitting and urea oxidation. The as-prepared CoBO x /NiCoP catalyst exhibits superior electrocatalytic performance with only overpotentials of 100, 283 mV for hydrogen evolution reaction (HER) and oxygen evolution reaction (OER) to reach the current density of 10 and 100 mA cm−2, respectively, and the low potential of 1.35 V to achieve a current density of 100 mA cm−2 for urea oxidation reaction (UOR). Theoretical calculations show that the construction of amorphous/crystalline heterostructure can accelerate the charge transfer between the active site and intermediate, thus enhance the intermediates adsorption and reduce the kinetic barrier toward HER/OER process for enhancing electrocatalytic activity. Importantly, the in-situ Raman spectroscopy discloses that the rapid formation of oxidation-state transition metal oxyhydroxide species would provide more active sites for the oxidation reaction. This multiple electrocatalysis demonstrates the great potential of amorphous/crystalline heterogeneous interfaces for high-performing electrocatalytic conversions. [ABSTRACT FROM AUTHOR]

• Based on the Euler-Lagrange framework, a three-dimensional transient heat-mass transfer model of silicon particle melting/migration coupled with turbulent heat transfer in the silicon melt during CCZ monocrystalline silicon growth was developed using large eddy simulation method. • The heat exchange between silicon particles and their own melt, as well as the changes in particle size during their melting/migration were considered. • The influences of key feeding particles parameters such as the feeding temperature, feeding particle size, and feeding speed on the melting/migration characteristics of silicon particles and the melt temperature were firstly revealed in detail. The Continuous Czochralski (CCZ) is a promising approach for preparing low-cost high-quality monocrystalline silicon in the photovoltaic field. To investigate the coupled mechanism of silicon particles melting/migration and melt turbulent heat transfer during the CCZ monocrystalline silicon growth, based on the Euler–Lagrange framework, a three-dimensional transient heat-mass transfer model is developed using the LES method considering the heat exchange between the silicon particles and the silicon melt as well as the particles size change. In addition, we investigated the effects of key silicon particle parameters such as feeding temperature, particle size and feeding speed, on the silicon particles melting/migration and melt turbulent heat transfer. The results show that appropriately increasing the feeding temperature and speed contributes to achieve more concentrated particles distribution and weaken the movement of silicon particles towards the crystalline interface simultaneously, which conduce to eliminate the adverse impact of continuous feeding on monocrystalline silicon growth. And the feeding temperature has a great effect on the temperature fluctuation near the crystalline interface. In addition, when the feeding speed exceeds 1.5m/s, increasing feeding speed has no significant effect on the particles distribution and melting process. Besides, the feeding particle size has a significant effect on the maximum penetration depth of particles. The small silicon particles prefer moving to the crystalline interface driven by thermophoretic force, which is detrimental to the high-quality CCZ monocrystalline silicon growth. [ABSTRACT FROM AUTHOR]

Skin effect that all eigenmodes within a frequency range become edge states is dictated by the topological properties of complex eigenvalues unique in non-Hermitian systems. The prevailing attempts to realize such a fascinating effect are confined to either one-dimensional or nonreciprocal systems exhibiting asymmetric couplings. Here, inspired by a recent model Hamiltonian theory, we propose a realistic reciprocal two-dimensional (2D) photonic crystal (PhC) system that shows the desired skin effect. Specifically, we establish a routine for designing such non-Hermitian systems via revealing the inherent connections between the nontrivial eigenvalue topology of order-2 exceptional points (EPs) and the skin effects. Guided by the proposed strategy, we successfully design a 2D PhC that possesses the EPs with nonzero eigenvalue winding numbers. The spectral area along a specific wavevector direction is then formed by leveraging the symmetry of the macroscopic geometry and the unit cell. The projected-band-structure calculations are performed to demonstrate that the desired skin effect exists at the specific crystalline interfaces. We finally employ time-domain simulations to vividly illustrate this phenomenon by exciting a pulse at the center of a finite-sized PhC. Our results form a solid basis for further experimental confirmations and applications of the skin effect. [ABSTRACT FROM AUTHOR]

Polymer materials with excellent physicochemical and electrical properties are desirable for energy storage applications in advanced electronics and power systems. Here, Al2O3@ZrO2 nanoparticles (A@Z) with a core-shell structure are synthesized and introduced to a P(VDF-HFP) matrix to fabricate P(VDF-HFP)/A@Z nanocomposite films. Experimental and simulation results confirm that A@Z nanoparticles increase the crystallinity and crystallization temperature owing to the effect of the refined crystal size. The incorporation of A@Z nanoparticles leads to conformational changes of molecular chains of P(VDF-HFP), which influences the dielectric relaxation and trap parameters of the nanocomposites. The calculated total trapped charges increase from 13.63 μC of the neat P(VDF-HFP) to 47.55 μC of P(VDF-HFP)/5 vol%-A@Z nanocomposite, indicating a substantial improvement in trap density. The modulated crystalline characteristic and interfaces between nanoparticles and polymer matrix are effective in inhibiting charge motion and impeding the electric conduction channels, which contributes to an improved electrical property and energy density of the nanocomposites. Specifically, a ~200% and ~31% enhancement in discharged energy density and breakdown strength are achieved in the P(VDF-HFP)/5 vol%-A@Z nanocomposite. [ABSTRACT FROM AUTHOR]

At present, the purchasing prices for silicon-based photovoltaic modules with 20% efficiency and more are between 20 and 40 EURct/Wp. These numbers correspond to 40 to 80 EUR/m2 and are in the same range as the mounting costs (material prices plus salaries) of such modules. Installers and operators of photovoltaic systems carefully balance the module and mounting costs when deciding among modules of different efficiencies. This contribution emulates the installer's decision via a simple, analytical module mounting decision (Mo2De) model. A priori, the model, and the resulting conclusions are completely independent of the photovoltaically active material inside the modules. De facto, however, based on the present state (cost, efficiency, reliability, bankability, etc.) of modules fabricated from (single) crystalline Si cells, conclusions on other photovoltaic materials might also be drawn: On the one hand, the model suggests that lower-efficiency modules with efficiencies below 20% will be driven out of the market. Keeping in mind their installation costs, installers will ask for large discounts for lower-efficiency modules. Technologies based on organic semiconductors, CdTe, CIGS, and even multicrystalline Si, might not survive in the utility market, or in industrial and residential applications. Moreover, this 20% mark will soon reach 23%, and finally will stop at around 25% for the very best, large-area (square meter sized) commercial modules based on single crystalline silicon only. On the other hand, it also seems difficult for future higher-efficiency modules based on tandem/triple cells to compete with standard Si-based reference modules. Compared to their expected higher efficiency, the production costs of tandem/triple cell modules and, therefore, also their required markup in sales, might be too high. Depending on the mounting cost, the Mo2De-model predicts acceptable markup values of 1 EURct/Wp (for low mounting costs of around 10 EUR/m2) to 11 EURct/Wp (for high mounting costs of 100 EUR/m2) if the module efficiency increases from 23% to 30%. Therefore, a 23% to 24% module efficiency, which is possible with silicon cells alone, might be enough for many terrestrial photovoltaic applications. [ABSTRACT FROM AUTHOR]

The development of accident-tolerant materials is of great significance for preventing the zirconium–water reactions and improving the inherent safety of nuclear reactors. In this study, ZrC/Ni multilayers with average layer thicknesses of 5, 10, 20, 50, and 100 nm were designed and successfully fabricated by magnetron sputtering. The characterization results of GIXRD, SEM, AFM, TEM, etc., show that the series of films are mainly composed of alternately deposited Ni crystalline layers and ZrC amorphous layers, and the interface is clear. The films were irradiated with 50 keV He+ with a fluence of 1.0 × 1017 ions/cm2 at room temperature, and the films with different layer thicknesses kept the original phase composition. It was found that an amorphous transition layer with a thickness of about 30 nm appeared between the amorphous and crystalline interface of the 100 nm film by TEM characterization. The analysis shows that this layer is formed by the mixing of Ni and Zr elements induced by irradiation, which is not conducive to He+ migration and produces large-sized helium bubbles. The appearance of the transition layer improves the irradiation stability of the amorphous/crystalline composite film, thus providing a theoretical basis for the application of this type of material in fuel cladding. [ABSTRACT FROM AUTHOR]

In this work, the epitaxial semipolar (11–22) AlN was prepared on nonpolar m-sapphire substrate by combining sputtering and high-temperature annealing. According to our systematic measurements and analysis from XRD, Raman spectra, and AFM, the evolution of crystalline structure and morphology was investigated upon increasing AlN thickness and annealing duration. The annealing operation intensively resets the lattice and improves the crystalline quality. By varying the film thickness, the contribution from the AlN-sapphire interface on crystalline quality and lattice parameters during the annealing process was investigated, and its contribution was found to be not so obvious when the thickness increased from 300 nm to 1000 nm. When the annealing was performed under durations from 1 to 5 h, the crystalline quality was found unchanged; meanwhile, the evolution of morphology was pronounced, and it means the crystalline reorganization happens prior to morphology reset. Finally, the annealing treatment enabled a zig-zag morphology on the AlN template along the sapphire [0001] direction in the plane, which potentially affects the subsequent device epitaxy process. Therefore, our results act as important experience for the semipolar nitride semiconductor laser device preparation, particularly for the epitaxy of microcavity structure through providing the crystalline evolution. [ABSTRACT FROM AUTHOR]

Phase‐change material (PCM) devices are one of the most mature nonvolatile memories. However, their high power consumption remains a bottleneck problem limiting the data storage density. One may drastically reduce the programming power by patterning the PCM volume down to nanometer scale, but that route incurs a stiff penalty from the tremendous cost associated with the complex nanofabrication protocols required. Instead, here a materials solution to resolve this dilemma is offered. The authors work with memory cells of conventional dimensions, but design/exploit a PCM alloy that decomposes into a heterogeneous network of nanoscale crystalline domains intermixed with amorphous ones. The idea is to confine the subsequent phase‐change switching in the interface region of the crystalline nanodomain with its amorphous surrounding, forming/breaking "nano‐bridges" that link up the crystalline domains into a conductive path. This conductive‐bridge switching mechanism thus only involves nanometer‐scale volume in programming, despite of the large areas in contact with the electrodes. The pore‐like devices based on spontaneously phase‐separated Ge13Sb71O16 alloy enable a record‐low programming energy, down to a few tens of femtojoule. The new PCM/fabrication is fully compatible with the current 3D integration technology, adding no expenses or difficulty in processing. [ABSTRACT FROM AUTHOR]

[Display omitted] • Crystalline Ni(OH) 2 /Amorphous NiMoS electrocatalyst were designed and synthesized by two-step hydrothermal process. • The as-obtained material shows excellent hydrogen evolution over all pH ranges. • The synergistic mechanism and the role of crystalline Ni(OH) 2 and amorphous NiMoS was elucidated. Designing and fabricating efficient electrocatalysts is a practical step toward the commercial application of the efficient hydrogen evolution reaction (HER) over all pH ranges. Herein, novel Ti@Ni(OH) 2 -NiMoS heterostructure with interface between crystalline Ni(OH) 2 and amorphous NiMoS was rationally designed and fabricated on Ti mesh (denoted as Ti@Ni(OH) 2 -NiMoS). Acid etching and calcination experiments helped in accurate elucidation of the synergistic mechanism as well as the vital role on crystalline Ni(OH) 2 and amorphous NiMoS. In acidic solutions, the HER performance of Ti@Ni(OH) 2 -NiMoS was mainly attributed to the amorphous NiMoS. In neutral, alkaline, and natural seawater solutions, the HER performance was mainly determined by the synergistic interface behaviors between the Ni(OH) 2 and NiMoS. The crystalline Ni(OH) 2 accelerated water dissociation kinetics, while the amorphous NiMoS provided abundant active sites and allowed for fast electron transfer rates. To deliver current densities of 10 mA·cm−2 in acidic, neutral, alkaline, and natural seawater solutions, the Ti@Ni(OH) 2 -NiMoS required overpotentials of 138, 198, 180 and 371 mV, respectively. This paper provides general guidelines for designing efficient electrocatalyst with crystalline/amorphous interfaces for efficient hydrogen evolution over all-pH ranges. [ABSTRACT FROM AUTHOR]

Sodium ion batteries (SIBs) have garnered more and more attentions owing to the uneven distribution and increasing price of lithium mineral. Herein, BiVO 4 –V 2 C endogenous heterostructures as anode for SIBs are synthesized via one-step in situ hydrothermal method. The designed hydrangea-like heterostructure ensures a wide contact surface for the interaction of anode material with the electrolyte, and endows stable heterojunction interfaces between BiVO 4 and V 2 C MXene, the synergistic effect of which significantly improves the electrical conductivity, pseudo-capacitance and alleviates the volumetric change of BiVO 4 during charge/discharge process. Density functional theory (DFT) calculations ulteriorly demonstrate that the electric field at the BiVO 4 –V 2 C interface contributes to the excellent Na ion diffusion kinetics and impressive sodium storage capacity. As a result, the BiVO 4 –V 2 C anode achieved outstanding performance with a high discharge capacity (480 mAh g−1 after 600 cycles at 0.2 A g−1), and impressive long-term lifespan (303 mAh g−1 over 2000 cycles at 1 A g−1). This work reveals a new design of novel V 2 C MXene heterojunctions which coupling with BiVO 4 combined with the analysis of amorphous/crystalline interface, developing a proper strategy for the effective energy storage of sodium. An endogenous heterostructure of BiVO 4 coupled with V 2 C MXene (BiVO 4 –V 2 C) is developed via a one-step hydrothermal method. The designed hydrangea-like heterostructure provides a large surface area for the contact of the electrode material with electrolyte, and endows stable heterojunction interfaces between BiVO 4 and V 2 C, which significantly improves the reaction kinetics. [Display omitted] • Hydrangea-like endogenous BiVO 4 –V 2 C heterostructure is firstly reported. • Internal micro-electric field for improving Na+ migration and reaction kinetics. • The electrode delivers superior specific capacity and excellent cycle stability. • Endogenous heterostructure offers new insights for MXenes heterojunctions design. [ABSTRACT FROM AUTHOR]

[Display omitted] • Anthracene-appended poly(ʟ-lactide)s (AAP) were synthesized by ROP of ʟ-lactide. • The excimer emission was observed in the low molecular weight AAP. • The monomeric emission is observed in amorphous and single crystals of AAP. • In crystallized AAP, fluorescence arises from anthracene excimers and monomers. • In the gel state AAP (e form), only the excimer emission was observed. The design and development of solid-state excimer-emitters bear great potential for attaining efficient solid-state luminescent materials. In this study, we have synthesized anthracene-appended poly(ʟ-lactide)s (AAPs) to regulate the arrangement of anthracene moieties by controlling the crystallization and polymorphic form of covalently linked poly(ʟ-lactide) (PLLA). In the high molecular weight AAP, the fluorescence intensity mainly arises from the monomeric anthracene moieties, whereas in the low molecular weight AAP, the excimer emission was observed depending on the structure and morphology of covalently-linked PLLA. The monomeric emission is predominantly observed in amorphous polymer due to the molecular level dispersion of covalently-linked anthracene moieties throughout the polymer matrix. When the polymer was crystallized under different conditions, covalently-linked anthracene moieties were excluded from polymer crystals or crystalline lamellae and are located on the surface or at the interface, which is advantageous for regulating the geometry of anthracene moieties. In the case of single crystals of PLLA, covalently-linked anthracene moieties assemble on the surface and emit mainly in their monomeric state due to the lack of π-stacking. In the melt-crystallized sample (α form), covalently-linked anthracene moieties reside at the interface of crystalline and amorphous domains by either dipolar interactions or π-stacking and fluorescence arising from anthracene excimers and monomers. In the gel state (ε form), only the excimer emission was observed due to the effective interactions between the anthracene moieties in the presence of excess solvent in the amorphous domains. In this way, polymer crystallization played a significant role in determining the arrangement of covalently-linked anthracene moieties in AAP. This study reveals the role of polymer crystallization on the excimer evolution in fluorophore-appended semicrystalline polymers and provides new insight into the design and development of fluorophore-appended polymers for optoelectronic devices. [ABSTRACT FROM AUTHOR]

Bismuth telluride-based thermoelectric (TE) devices were widely used in waste heat recovery due to their high thermoelectric figure of merit (ZT), but the severe diffusion between Sn-based solder and TE pillar generated porous and brittle Sn-Te intermetallic compound (IMC), which seriously restricted the reliable service of devices. Ni-based coating was used but the thick Ni-Te IMC also impaired the properties of TE pillars. In this work, the crystalline Co-P coating was inserted between the p-type TE material Bi 0.5 Sb 1.5 Te 3 and the solder by electrodeposition, and the power generation sustainability of the TE pillar were significantly improved, and the mechanism was revealed. The microstructural characterization proved that the Co-P coating could effectively resist the diffusion of active Sn, Bi, Sb, Cu atoms. Co-P coating would provide support for the structural integrity and performance sustainability of TE pillars. It was worth noting that an ultrathin CoTe 2 IMC layer was formed between the Co-P coating and the Bi-Sb-Te pillar, which was much thinner than the Ni-Te IMC layer reported in the literature. This indicated that Co-P only consumed little thermoelectric elements, but also a good metallurgical bond was formed between the Co-P and the Bi-Sb-Te. After aging at 423 K for 150 h, the maximum output power and average Seebeck coefficient of the TE pillar without coating dropped significantly by 74% and 34%, respectively, and the internal resistance rose by 67%. Remarkably, the maximum output power and average Seebeck coefficient of the TE pillar protected by the Co-P coating only decreased by 14% and 5%, respectively, and the internal resistance only increased by 6%. [Display omitted] • Co-P coating showed a remarkable effect on the sustainability of TE power generation. • Co-P coating could effectively resist the diffusion of active Sn, Bi, Sb, Cu atoms. • An ultrathin CoTe 2 IMC layer was formed between the Co-P coating and the TE pillar. • Co-P coating consumed less thermoelectric elements than Ni-based coating. [ABSTRACT FROM AUTHOR]

Nano-porosity in amorphous Ge formed by swift heavy ion irradiation displays a peculiar self-organisation process. Initially almost randomly distributed pores grow with increasing irradiation fluence and segregate in layers orientated parallel to the sample surface. This self-organisation mechanism depends on the ion energy, thickness of the amorphous Ge layer and the angle of ion incidence and shows a characteristic length depending on ion energy and irradiation angle. Molecular dynamics simulations of individual ion tracks show that voids form due to the transition from the low-density amorphous to the high-density liquid phase, which also gives rise to a flow directed away from large pores and surfaces. The flow results in a characteristic distance from surfaces and larger pores, below which new voids do not form, and supports the formation of voids at the amorphous/crystalline interface. Simulations also demonstrate that, while direct impacts can reposition small voids, partial or nearby impacts promote their growth at the same location. These processes are plausible drivers for the self-organization. [Display omitted] [ABSTRACT FROM AUTHOR]

Order/dis-order atomic arrangements in crystalline/amorphous structure possess a complementing effect in electro-catalysis as the former one can offer a long-range electronic conducting path, whereas the latter is rich with active sites. However, atomic level interfacing of crystalline and amorphous structures is extremely challenging and thus often end-up with uncontrolled secondary deposition one above another. Here, we are reporting second-scale atomic rearrangement of crystalline oxide nanowire surface into amorphous molybdenum sulfide shell that displayed excellent hydrogen evolution activity. Employing transient heating by microwave-activated graphene filament, surface atoms of molybdenum tungsten oxide (MoWO) nanowire can be arrested in either an amorphous or crystalline state during their sulfidation. Such a nanowire structure consisting of crystalline oxide core-amorphous sulfide shell shows excellent catalytic activity for hydrogen evolution reaction (HER) and exhibits an overpotential of 136 mV at 10 mA cm−2 in the acid electrolyte, which is much lower than the overpotential of parent oxide nanowire (356 mV) and its fully sulfurized crystalline counterpart (163 mV). As-developed catalyst also shows competitive HER performance with excellent alkaline and neutral electrolytes stability, thereby qualifying it as a pH universal catalyst. A detailed density functional theory calculation reveals oxide core promoted activation of multiple sites of amorphous sulfide phase, which provide key insights of electronic modulation via crystalline/amorphous interfacial structure for HER catalysis. This rapid and highly facile technique can lay the platform for the development of generic crystalline/amorphous core-shell nanostructure and their possible use as cost-effective and efficient catalysts. [Display omitted] • The unique microwave-induced second-scale surface amorphization is demonstrated. • Amorphous@crystalline core-shell nanowire of a-MoS x @MoWO structure was realized. • The a-MoS x @MoWO exhibits excellent pH-universal HER activity. • Synergy between core and shell for HER is studied by detailed DFT calculation. • Crystalline core turns multiple inactive sites of amorphous shell to highly active. [ABSTRACT FROM AUTHOR]

Transition metal borides have shown great promise as a supercapacitor electrode material. However, the amorphous structure of metal borides leads to the structural collapse of electrode material during electrochemical cycling, which seriously affects the stability of the material. In the present work, we successfully construct amorphous/crystalline NiCoB@NiCo 2 S 4 heterogeneous interfacial composites by introducing the outer layer of sulfide to improve the electrochemical performance. NiCoB@NiCo 2 S 4 shows a specific capacitance of 1562 F g−1 at a current density of 1 A g−1 and still possesses 58% specific capacitance even at a higher current density of 50 A g−1. The asymmetric supercapacitor (ASC) device assembled with Bi 2 O 3 @C as the negative electrode and NiCoB@NiCo 2 S 4 as the positive exhibits a high energy density of 98.75 Wh kg−1 at a power density of 750 W kg−1. The ASC also exhibits excellent cycling stability with capacitance retention of 118% after 10000 cycles at a current density of 10 A g−1, which fully demonstrates the practical applications value of NiCoB@NiCo 2 S 4 //Bi 2 O 3 @C. The amorphous/crystalline NiCoB@NiCo 2 S 4 heterogeneous interfacial composites were successfully constructed for the first time. The resulting amorphous/crystalline heterogeneous interface effectively improves the electron/ion transport rate and increases the electrochemical reactive sites. The assembled NiCoB@NiCo 2 S 4 //Bi 2 O 3 @C asymmetric supercapacitors exhibit a high energy density of 98.75 Wh kg−1 due to the high specific capacitance potential of NiCoB@NiCo 2 S 4 and Bi 2 O 3 @C. The introduced crystalline outer cladding metal sulfide effectively inhibits the oxidation of the metal boride core, thus exhibiting excellent electrochemical cycling stability. [Display omitted] • Amorphous/crystalline NiCoB@NiCo 2 S 4 interface structure was firstly constructed. • NiCoB@NiCo 2 S 4 showed 1562 F g−1 at 1 A g−1. • The ASC had a high energy density of 98.75 Wh kg−1. [ABSTRACT FROM AUTHOR]

Microstructures and mechanical properties of Ni matrix composites reinforced with amorphous SiO 2 particles by in-situ pyrolysis of polycarbosilane (PCS) coated on Ni powders were studied in this paper. The submicron spherical amorphous SiO 2 particles instead of traditional SiC uniformly distributing in the composites result from the generated silicon source by PCS pyrolysis combined with oxygen impurity in the preparation. The prepared composites achieve high yield strength, 172 MPa, and ultimate tensile strength, 494 MPa, as well as outstanding ductility, total elongation 28.4 %, which is improved 13.9 %, 50.6 % and 160.6 % compared with those for pure Ni samples, respectively. The effects of solid solution strengthening, grain refinement strengthening, reinforcement particle strengthening and dislocations behavior of at amorphous/crystalline interface on the combination of high strength and ductility of the composites were discussed. [Display omitted] • Amorphous SiO 2 reinforced Ni matrix composites were fabricated by in-situ pyrolysis of polycarbosilane coated on Ni powders. • Amorphous SiO 2 instead of crystalline SiC formed by the combination of silicon generated in the pyrolysis with oxygen. • The composites exhibit a combination of excellent tensile strength and ductility. [ABSTRACT FROM AUTHOR]

Developing earth-abundant, efficient and durable catalysts toward the hydrogen evolution reaction (HER) is critical for the large-scale deployment of sustainable hydrogen production from renewable energies. Transition metal dichalcogenides (TMDs) are promising candidates for the replacement of precious and state-of-the-art platinum-groups-metals, but their HER performance still needs improvement. Constructing crystalline/amorphous interfaces is effective in terms of creating abundant active sites for boosted catalytic activity. Therefore, in this study, defective crystalline vanadium disulfide/amorphous molybdenum sulfide/reduced graphene oxide (c-VS 2 /a-MoS x /RGO) nanocomposites are fabricated via a combined hydrothermal-plasma method. The HER performance of c-VS 2 /a-MoS x /RGO is optimized by tuning the plasma treatment duration and the amount of precursors, and the corresponding mechanisms were investigated by morphological and elemental analyses. Taking advantage of the high reactivity of low-temperature plasma, the strategy presented in this work is effective in terms of constructing crystalline/amorphous interfaces and introducing multiple defects, which creates abundant active sites and ultimately results in boosted HER performance. The optimal c-20VS 2 /a-40MoS x /RGO catalyst exhibited excellent HER activity (η@100 mA cm−2 = 193 mV and η@500 mA cm−2 = 244 mV) and good stability. This work provides a facile and effective strategy for promoting the HER performance of TMDs and sheds light on rationally designing efficient HER catalysts using earth-abundant elements. [Display omitted] This work describes a combined hydrothermal-plasma method for fabricating defective crystalline vanadium disulfide/amorphous molybdenum sulfide/reduced graphene oxide (c-VS 2 /a-MoS x /RGO) nanocomposites toward hydrogen evolution reaction. The HER activity of c-VS 2 /a-MoS x /RGO can be optimized by adjusting plasma treatment duration and the amount of precursors. Structural and electrochemical characterizations indicate that the optimal c-VS 2 /a-MoS x /RGO catalyst possess abundant active sites, which can be attributed to crystalline/amorphous interface and multiple defects in the heterostructures. The c-VS 2 /a-MoS x /RGO catalysts show excellent activity and good stability for the HER. • This work develops a method for constructing crystalline/amorphous interfaces. • Crystalline/amorphous interfaces are beneficial for boosting HER activity. • The level of lattice defects should be controlled for optimal HER activity. • c-VS 2 /a-MoS x /RGO exhibits boosted HER performance at high current densities. [ABSTRACT FROM AUTHOR]

[Display omitted] • a/c-RuCoMo y O x /NF was synthesized by coprecipitation-microwave method. • Microwave time affects the transition from crystalline to amorphous structure. • a/c-interface and electron interaction make a/c-RuCoMo y O x /NF have mighty activity. • The η 10 value of a/c-RuCoMo y O x /NF is 39 and 166 mV for HER and OER. Due to the vast difference in structure and the unique electronic state at the heterointerface, the amorphous/crystalline (a/c) heterostructure exhibits excellent potential in electrocatalysis. However, there are great challenges in constructing the material with ample a/c-heterointerfaces and controllably modulated a/c-heterointerface region through a simple one-step method. Herein, the a/c-RuCoMo y O x /NF (nickel foam) electrocatalyst is synthesized by the coprecipitation-microwave treatment method. Notably, microwave time directly affects the ratio of amorphous region (RuCoMoO x) to crystalline region (CoMoO 4 and CoO). Surprisingly, the a/c-RuCoMo y O x /NF with abundant crystallinity/amorphous heterointerfaces exhibits the ultralow η 10 values of 39 and 166 mV for HER and OER, which are 0.5-fold and 0.63-fold lower than that of Pt/C-NF and RuO 2 -NF benchmarks, respectively. Overall, this work provides a novel idea and convenient method for the construction of amorphous/crystalline heterointerfaces with modulated interface region, and guides the direction for the preparation of superior electrocatalysts by regulating the a/c-heterointerface region. [ABSTRACT FROM AUTHOR]

[Display omitted] • NiCr-based composites with crystalline Cr 3 C 2 and amorphous SiO 2 dual-particles were successfully fabricated. • The composites exhibit a combination of excellent tensile strength and ductility. • The generation and annihilation behavior of dislocations at amorphous/crystalline interface contributes to improve tensile strength and ductility. • Introducing crystalline-amorphous dual-particles into metallic materials can simultaneously improve their strength and ductility. Strength and ductility of structural materials are mutually exclusive in general due to the strength-ductility trade-off. Using in-situ pyrolysis of polycarbosilane in NiCr powder green compacts, we fabricated NiCr-based composites with micro-sized crystalline Cr 3 C 2 and amorphous SiO 2 dual-particles. Tensile tests show that the NiCr-based composites have a combination of high strength and ductility with the yield strength, ultimate tensile strength and ductility as 449 MPa, 838 MPa and 20.5%, respectively. The amorphous SiO 2 and crystalline Cr 3 C 2 particles exhibit plastic deformation and transgranular fracture, respectively, under tensile stress. Besides solid solution strengthening, the generation and annihilation behavior of dislocations at amorphous/crystalline interface and the strain hardening of the ceramic particles by hindering the movement of dislocations mutually contributes to the combination of excellent strength and ductility of our composites. [ABSTRACT FROM AUTHOR]

An intrinsic feature of nearly all internal interfaces in crystalline systems (homo- and hetero-phase) is the presence of disconnections, namely topological line defects constrained to the interface that have both step and dislocation character. We demonstrate that elastic interactions between disconnections strongly affect the morphology and motion of interfaces, allowing for understanding and reconciling diverse key experiments. In particular, these elastic interactions strongly modify equilibrium interface morphologies compared with those solely determined by anisotropic surface energy, and affect the kinetics of migrating interfaces. They are also found to lead to a thermodynamic, first-order, finite-temperature, faceting–defaceting transition. We demonstrate these phenomena through numerical simulations based upon a general, continuum disconnection-based model for interface thermodynamics and kinetics applied to embedded particles/grains, steady-state interface migration geometries, and nominally flat interfaces. [Display omitted] [ABSTRACT FROM AUTHOR]

Diamond-structured grain boundaries (GBs) are important because they have notable effects on the performances of many functional devices. Previous studies have suggested that the most stable structures of some silicon GBs can be obtained by structural reconstruction from some meta-stable GBs explored at 0 K by atomic simulation. While GB reconstruction is possible to enable these meta-stable GBs to exist at elevated temperatures, reports on such behaviors are rare. This work unveiled a non-reported GB reconstruction from two degenerate ground-states of a well-known silicon GB which can be distinguished by an orientational feature of their unit structures. The reconstructing structures were verified stable by density-functional-theory (DFT) simulation. By thermodynamical and kinetical discussion, we have shown that the structural variation of this well-known GB at elevated temperatures is more likely to be dominated by this reconstruction mechanism rather than by transforming to other metastates. Such a reconstruction mechanism allows the whole GB system to be treated as an Ising model with a second-ordered phase transition. By applying harmonic transition state theory, we predicted the possible concentration of the defects induced by reconstruction at elevated temperatures and discussed their effects on the band structure of the GB by DFT simulation. An explanation was made on the cause of the difference between the phase transition behavior of this silicon GB and that of a reported copper GB. Our research made new insights into understanding the behavior of reconstructing interfaces in covalent-bonded crystalline materials. [Display omitted] [ABSTRACT FROM AUTHOR]

• Innovative passivating contact using quantum well at poly-Si/c-Si interface. • Efficacy of quantum well on large-area TOPCon device is discussed. • The quantum well improves the V oc by 20 mV. • The quantum-well device achieves an efficiency of 23.91%. Polysilicon/crystalline silicon (poly-Si/c-Si) passivating contact is attracting attention as a promising passivation technology for c-Si solar cells. Recently, we have proposed a quantum-well passivating contact (QWPC) that uses a quantum-well at the poly-Si/c-Si interface to suppress recombination, such as Auger and/or Shockley-Read-Hall recombination, due to deep dopant-diffusion problems from poly-Si into the c-Si absorber and, as a result, promote the passivation quality. Herein, we demonstrate the effectiveness of the QWPC in a large area (272.13 cm2) of c-Si photovoltaic devices. A reference device, featuring a front boron diffusion emitter and normal rear poly-Si/c-Si passivating contact without QWPC, achieves a certified 22.99% conversion efficiency. The QWPC significantly reduces recombination losses within the device, as demonstrated by bias external quantum efficiency and dark I-V characteristics. The QWPC improves the open-circuit voltage (V oc) by 20 mV. An antireflection magnesium fluoride coating applied at the front along with the QWPC improves the short-circuit current density by 1.27 mA/cm2. The QWPC device achieves a conversion efficiency of 23.91%. The QWPC demonstrates an innovative passivating contact for promoting c-Si solar cell performance. [ABSTRACT FROM AUTHOR]

GdPO 4 is a promising thermal barrier coating (TBC) candidate owing to its excellent resistance to calcium-magnesium-alumina-silicate (CMAS) and molten salt corrosion. In this study, the corrosion behavior of GdPO 4 in CMAS + molten salt (CN) was investigated and compared with that in CMAS. At 1200 and 1250 °C, interface reaction layers rapidly formed on both the CN and CMAS attacked GdPO 4 pellets, and many crystalline products were generated in the melts. This effectively increased the melt viscosity and suppressed its penetration. As compared to CMAS, CN was more aggressive to GdPO 4 at 1200 °C but less at 1250 °C. [Display omitted] • CMAS + NaVO 3 (CN) and CMAS corrosion behavior of GdPO 4 was studied and compared. • The interface reaction layers on the CN and CMAS attacked GdPO 4 pellets had different phase compositions. • The reactive crystalline products in CN and CMAS melts on GdPO 4 pellets were different. • The formed crystalline products and interface reaction layers increased the melt viscosity and inhibited melt penetration. • As compared to CMAS, CN was more aggressive to GdPO 4 at 1200 ℃ but less at 1250 ℃. [ABSTRACT FROM AUTHOR]

[Display omitted] The CSL/DSCL model for interfaces in crystalline materials offers a unified framework to study interface dislocations in phase boundaries and disconnections in grain boundaries. The model relies on the existence of a coincidence relation between the two lattices that meet at an interface. The model's ability to quantitatively predict the thermodynamics and kinetics of interfaces has been demonstrated for a limited set of symmetric tilt grain boundaries (STGBs) in cubic materials and twin boundaries. However, the lack of a general framework of interface defects prevents its applicability to arbitrary rational boundaries. In this paper, we present a mathematical framework based on the Smith normal form (SNF) for integer matrices to study the bicrystallography of rational phase and grain boundaries. One of the main results of the paper is a constructive proof of the invariance of the coincident site lattice (CSL) under discrete relative displacements of the parent lattices (of possibly different kind) by a displacement shift complete lattice (DSCL) vector. In addition, we obtain necessary and sufficient conditions on two lattices, related by not only rotations but also lattice distortions, for the existence of a coincidence relation. We first apply these results to explore coincidence relations in arbitrary phase boundaries, and study interface dislocations. In particular, we demonstrate the framework for a phase boundary formed by a strained hexagonal lattice and a square lattice. As a second application, we show how to enumerate all possible (geometric) disconnection modes in arbitrary rational grain boundaries, including glide and non-glide modes in both STGBs and asymmetric-tilt grain boundaries (ATGBs). The constructive nature of the framework lends itself to an algorithmic implementation based exclusively on integer matrix algebra to construct all interfaces that admit CSLs up to a prescribed size, and determine disconnection modes in grain boundaries. We demonstrate the use of SNF bicrystallography on selected bicrystal misorientation axes/angles in face-centered cubic (fcc), body-centered cubic (bcc), and hexagonal (hex) lattices. [ABSTRACT FROM AUTHOR]

[Display omitted] Since the nuclear waste releases heat during the decay process, the mechanical behaviors of granites adjacent to the nuclear waste repository are inevitably impacted by the discrepancies in the thermal expansion characteristics of composite minerals. In this study, a mesostructure-based model (MSBM) was first proposed to characterize the thermal behaviors of varying minerals and cementation interfaces with consideration of the aperture-dependent weakening effects of pre-existing micro-cracks on mineral properties. Based on the MSBM, nine sets of numerical models with different mineral compositions were generated to explore the relationship between the mineral composition and the macro mechanical behaviors of granite at the temperatures of 25–250 °C. The meso -mechanisms behind the varied macro mechanical behaviors were comprehensively analyzed. The results indicate that the macro mechanical properties, i.e., the uniaxial compressive stress (UCS) and elastic modulus (E) are dependent on the combined effects of the different thermal expansion characteristics of minerals and the different thermoelastic behaviors of the crystalline interfaces, especially the quartz-biotite and quartz-feldspar mineral boundaries. Finally, an evaluation system aiming to quantify the effects of mineral composition and temperature on the mechanical behaviors of granite was proposed. Principal minerals such as quartz and feldspar strongly influence the UCS and E of the rock at different temperatures, and the influence of feldspar on UCS becomes more pronounced with increasing the temperature. Biotite has little influence on the change in elastic modulus with temperature, while the contribution of biotite to UCS varies with the temperature. [ABSTRACT FROM AUTHOR]

In the rapidly developing modern industrial fields, the materials used are often required to have simultaneously high strength and high electrical conductivity. However, these two properties often conflict and cannot be met at the same time. In the present study, we developed the Cu/Cu–Zr–Al bulk metallic glass (BMG) composites which exhibited simultaneously high strength and high electrical conductivity, as well as large plasticity. The BMG composites were fabricated by using spark plasma sintering crystalline Cu-coated Cu–Zr–Al metallic glass composite powders. The effect of particle size of the Cu–Zr–Al metallic glass powders on mechanical properties and electrical properties of the BMG composites was investigated systematically. Microstructure of contact interfaces between crystalline Cu and Cu–Zr–Al metallic glass was also characterized and discussed. This study is expected to provide an effective technical approach for the development of new high strength and high conductivity materials. [Display omitted] • The BMG composites with simultaneously high strength and high conductivity were developed. •The composites were fabricated by sintering Cu-coated Cu–Zr–Al glassy composite powders. •Effect of particle size on mechanical and electrical properties was investigated systematically. •Optimum Cu–Zr–Al metallic glass particle size of the BMG composites with both high strength and high conductivity was below 50 μm. •Good bonding between crystal and glassy is responsible for excellent comprehensive properties. [ABSTRACT FROM AUTHOR]

For industrial high-purity hydrogen production, it is essential to develop low-cost, earth-abundant, highly-efficient, and stable electrocatalysts which deliver high current density (j) at low overpotential (η) for oxygen evolution reaction (OER). Herein, we report an active mesoporous Ni 2 P @ FePO x H y pre-electrocatalyst, which delivers high j = 1 A cm−2 at η = 360 mV in 1 M KOH with long-term durability (12 days), fulfilling all the desirable commercial criteria for OER. The electrocatalyst shows abundant interfaces between crystalline metal phosphide and amorphous phosphorus-doped metal-oxide, improving charge transfer capability and providing access to rich electroactive sites. Combined with an excellent non-noble metal-based HER catalyst, we achieve commercially required j = 500/1000 mA cm−2 at 1.65/1.715 V for full water-splitting with excellent stability in highly corrosive alkaline environment (30% KOH). The alkaline-anion-exchange-membrane water-electrolyzer (AAEMWE) fabricated for commercial viability exhibits high j of 1 A cm−2 at 1.84 V with long-term durability as an economical hydrogen production method, outperforming the state-of-the-art Pt/C – IrO 2 catalyst. [Display omitted] • Noble-metal free catalysts for oxygen evolution reactions are investigated. • Crystalline (Ni 2 P) and amorphous (FePO x H y) phases in Ni 2 P @ FePO x H y catalyst provide more electrocatalytic active sites. • The Ni 2 P @ FePO x H y catalyst shows excellent AAEMWE cell performance with a low overpotential and good stability. • The Ni 2 P @ FePO x H y catalyst exhibits a low overpotential of 360 mV for OER to deliver a high current density of 1 A cm−2. [ABSTRACT FROM AUTHOR]

[Display omitted] • Innovative passivating contact using poly-Si/quantum well/c-Si contact. • Quantum well suppresses dopant diffusion from the poly-Si layer into c-Si bulk. • Excellent passivation quality achieved with iV oc of 742 mV and J o of 1.1 fA/cm2. Herein, we propose a quantum well comprising a stack of SiO x /nanocrystalline silicon (nc-Si)/SiO x layers between a polycrystalline silicon (poly-Si) layer and a crystalline silicon wafer (c-Si) for enhancing the passivation quality through the poly-Si/c-Si passivating contact for c-Si solar cells. A large number of dopants can diffuse deeply into c-Si from a heavily doped poly-Si layer during high-temperature annealing, reducing the surface passivation quality. The quantum well with the double SiO x layer plays a significant role as a double barrier, thus suppressing this. The formation of the nc-Si phase sandwiched between the SiO x layers can support carrier transport, i.e., the tunnelling of carriers through the SiO x layers for collection. Moreover, a highly doped poly-Si/quantum well/c-Si contact exhibits considerable improvement in the passivation quality, achieving a high iV oc of 742 mV and low J o of 1.1 fA/cm2, compared with a reference poly-Si/c-Si passivating contact (iV oc = 707 mV, J o = 32.5 fA/cm2). The results indicate the effectiveness of the innovative passivating contact concept and pave the way for further improvements in the performance of c-Si solar cells. [ABSTRACT FROM AUTHOR]