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• A serial of Eu2+-doped CLLB single crystals were successfully grown. • The Eu2+ activated CLLB matrix strategy increases the Stokes shift. • The light yields of CLLB: 2% Eu is 18700ph/MeV under 137Cs source at 662 keV. • CLLB: Eu crystal has the application potential of long afterglow X-ray imaging. In this work, a novel single crystal scintillator, Eu2+-doped Cs 2 LiLaBr 6 (CLLB: Eu) with Ф12 mm × 50 mm, was successfully grown by the Bridgman method. The effects of substitution amount of europium ions on the crystal structure, luminescent properties and scintillation properties were systematically studied by fluorescence spectroscopy, XEL, decay kinetics, and temperature-dependent emission spectra. The Cs 2 LiLaBr 6 :2%Eu sample presents the highest light yield under X-ray excitation, which is about 235 times that of commercial BGO single crystals. The nanosecond decay lifetime of Eu2+ was observed in Cs 2 LiLaBr 6 :Eu crystal. The afterglow result indicates that the Cs 2 LiLaBr 6 : Eu crystal has a long afterglow and the afterglow mechanism of Cs 2 LiLaBr 6 : Eu crystal was proposed and constructed. It has a potent application in nuclear radiation detection and imaging as a scintillation long afterglow material. [ABSTRACT FROM AUTHOR]

• γ-CuI single crystal was obtained successfully by vertical Bridgman method for the first time. • The optimum growth parameters of γ-CuI single crystal were studied in detail. • The optical transmission of γ-CuI single crystal was presented and the bandgap was estimated. • The photoluminescence spectra and X-ray excited luminescence of γ-CuI single crystal were investigated. The cuprous iodide (γ-CuI) exhibits an ultrafast scintillation property with decay time about 90 ps and shows a great potential application in ultrafast scintillators. In this paper, the γ-CuI crystal with dimensions of φ 10 mm × 24 mm was obtained by the vertical Bridgman method for the first time. The effects of raw material purification, furnace temperature, cooling and pulling rates crystal growth were presented in detail. The optimum growth conditions are as follows: pulling rate at 0.33 mm/h, cooling rate at 8.96 °C/h after growth, the furnace temperature at 675 °C. The optical transmittance, the photoluminescence and the X-ray excited luminescence of the as-grown crystals were characterized. [ABSTRACT FROM AUTHOR]