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In multicomponent lattice problems, for example, in alloys and at crystalline surfaces and interfaces, atomic arrangements exhibit spatial correlations that dictate the kinetic and thermodynamic phase behavior. These correlations emerge from interparticle interactions and are frequently reported in terms of the short-range order (SRO) parameter. Expressed usually in terms of pair distributions and other cluster probabilities, the SRO parameter gives the likelihood of finding atoms/molecules of a particular type in the vicinity of other atoms. This study focuses on fundamental constraints involving the SRO parameters that are imposed by the underlying lattice topology. Using a data-driven approach, we uncover the interrelationships between different SRO parameters (e.g., pairs, triplets, and quadruplets) on a lattice. The main finding is that while some SRO parameters are independent, the remaining are collinear, i.e., the latter are dictated by the independent ones through linear relationships. A kinetic and thermodynamic modeling framework based on these constraints is introduced. [ABSTRACT FROM AUTHOR]

Phonon diffraction and interference patterns are observed at the atomic scale, using molecular dynamics simulations in systems containing crystalline silicon and nanometric obstacles, such as voids or amorphous inclusions. The diffraction patterns due to these nano-architectured systems of the same scale as the phonon wavelengths are similar to the ones predicted by the simple Fresnel–Kirchhoff integral. The few differences between the two approaches are attributed to the nature of the interface and the anisotropy of crystalline silicon. Based on the wave description of phonons, these findings can provide insights into the interaction of phonons with nano-objects and can have applications in smart thermal energy management. [ABSTRACT FROM AUTHOR]

Amorphous titanium dioxide (a-TiO2) is widely used as a coating material in applications such as electrochemistry and self-cleaning surfaces where its interface with water has a central role. However, little is known about the structures of the a-TiO2 surface and aqueous interface, particularly at the microscopic level. In this work, we construct a model of the a-TiO2 surface via a cut-melt-and-quench procedure based on molecular dynamics simulations with deep neural network potentials (DPs) trained on density functional theory data. After interfacing the a-TiO2 surface with water, we investigate the structure and dynamics of the resulting system using a combination of DP-based molecular dynamics (DPMD) and ab initio molecular dynamics (AIMD) simulations. Both AIMD and DPMD simulations reveal that the distribution of water on the a-TiO2 surface lacks distinct layers normally found at the aqueous interface of crystalline TiO2, leading to an ∼10 times faster diffusion of water at the interface. Bridging hydroxyls (Ti2–ObH) resulting from water dissociation decay several times more slowly than terminal hydroxyls (Ti–OwH) due to fast Ti–OwH2 → Ti–OwH proton exchange events. These results provide a basis for a detailed understanding of the properties of a-TiO2 in electrochemical environments. Moreover, the procedure of generating the a-TiO2-interface employed here is generally applicable to studying the aqueous interfaces of amorphous metal oxides. [ABSTRACT FROM AUTHOR]

The degradation of microplastics in relation to marine pollution has been receiving increasing attention. Because the spherulites that comprise microplastics have a highly ordered lamellar structure, their decomposition is thought to involve a lamellar structure collapse process. However, even in the simplest case of an order–disorder transition between lamellae and melt upon heating, the microscopic details of the transition have yet to be elucidated. In particular, it is unclear whether nucleation occurs at defects in the crystalline portion or at the interface between the crystalline and amorphous portions. To observe the transition in molecular simulations, an approach that distinguishes between the crystalline and amorphous structures that make up the lamella is needed. Local order parameters (LOPs) are an attempt to define the degree of order on a particle-by-particle basis and have demonstrated the ability to precisely render complex order structure transitions during phase transitions. In this study, 274 LOPs were considered to classify the crystalline and amorphous structures of polymers. Supervised machine learning was used to automatically and systematically search for the parameters. The identified optimal LOP does not require macroscopic information such as the overall orientation direction of the lamella layers but can precisely distinguish the crystalline and amorphous portions of the lamella layers using only a small amount of neighboring particle information. [ABSTRACT FROM AUTHOR]

We report different growth modes and corresponding magnetic properties of thin EuSe films grown by molecular beam epitaxy on BaF2, Pb1−xEuxSe, GaAs, and Bi2Se3 substrates. We show that EuSe grows predominantly in the (001) orientation on GaAs(111) and Bi2Se3, but along the (111) crystallographic direction on BaF2 (111) and Pb1−xEuxSe (111). High resolution transmission electron microscopy measurements reveal a sharp and highly crystalline interface for both (001) and (111) EuSe films. In agreement with previous studies, ordered magnetic phases include antiferromagnetic, ferrimagnetic, and ferromagnetic phases. In contrast to previous studies, we found a strong hysteresis of the antiferromagnetic–ferrimagnetic transition. The ability to grow epitaxial films of EuSe on Bi2Se3 and of Bi2Se3 on EuSe enables further investigation of interfacial exchange interactions between various phases of an insulating metamagnetic material and a topological insulator. [ABSTRACT FROM AUTHOR]

Conducting oxide interfaces have attracted considerable attention, motivated by both fundamental science and potential for oxide electronic devices. An important gap for maturing such device technology is scalability and routes to control the electronic properties, which can narrow the device engineering space. Here, we demonstrate and explain the mechanisms of highly tunable conductive oxide interfaces. We synthesized amorphous--crystalline Al2O3/SrTiO3 interfaces using the scalable and industry-compatible atomic layer deposition (ALD) technique. An NH3 plasma pretreatment is employed in the ALD chamber, and its duration is used as a tuning parameter for the electrical properties, where a span of three orders of magnitude in the sheet resistance is observed at room temperature. For the most conductive sample, our results are comparable to the highest carrier density values reported for all-crystalline oxide interfaces prepared with state-of-the-art epitaxial growth techniques, such as pulsed laser deposition. We pinpoint the origin of conductivity to oxygen vacancies caused by the SrTiO3 reduction by the NH3 plasma pretreatment. These results present a simple, scalable, and industry-compatible route for realizing conductive oxide interfaces, with a broad parameter space, offering a versatile and flexible toolkit for oxide device engineering. [ABSTRACT FROM AUTHOR]

Direct wafer bonding of β-Ga2O3 and N-polar GaN at a low temperature was achieved by acid treatment and atmospheric plasma activation. The β-Ga2O3/GaN surfaces were atomically bonded without any loss in crystalline quality at the interface. The impact of post-annealing temperature on the quality of bonding interfaces was investigated. Post-annealing at temperatures higher than 700 °C increases the area of voids at bonded interfaces probably due to the difference in the coefficient of thermal expansion. The integration of β-Ga2O3 on the GaN substrate achieved in this work is one of the promising approaches to combine the material merits of both GaN and Ga2O3 targeting the fabrication of novel GaN/β-Ga2O3 high-frequency and high-power electronics as well as optoelectronic devices. [ABSTRACT FROM AUTHOR]