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Superconducting diodes are a recently-discovered quantum analogueue of classical diodes. The superconducting diode effect relies on the breaking of both time-reversal and inversion symmetry. As a result, the critical current of a superconductor can become dependent on the direction of the applied current. The combination of these ingredients naturally occurs in proximitized semiconductors under a magnetic field, which is also predicted to give rise to exotic physics such as topological superconductivity. In this work, we use InSb nanowires proximitized by Al to investigate the superconducting diode effect. Through shadow-wall lithography, we create short Josephson junctions with gate control of both the semiconducting weak link as well as the proximitized leads. When the magnetic field is applied perpendicular to the nanowire axis, the superconducting diode effect depends on the out-of-plane angle. In particular, it is strongest along a specific angle, which we interpret as the direction of the spin-orbit field in the proximitized leads. Moreover, the electrostatic gates can be used to drastically alter this effect and even completely suppress it. Finally, we also observe a significant gate-tunable diode effect when the magnetic field is applied parallel to the nanowire axis. Due to the considerable degree of control via electrostatic gating, the semiconductor-superconductor hybrid Josephson diode emerges as a promising element for innovative superconducting circuits and computation devices.

The proximity effect in semiconductor-superconductor nanowires is expected to generate an induced gap in the semiconductor. The magnitude of this induced gap, together with the semiconductor properties like the spin-orbit coupling and $g$\,-\,factor, depends on the coupling between the materials. It is predicted that this coupling can be adjusted through the use of electric fields. We study this phenomena in InSb/Al/Pt hybrids using nonlocal spectroscopy. We show that these hybrids can be tuned such that the semiconductor and superconductor are strongly coupled. In this case, the induced gap is similar to the superconducting gap in the Al/Pt shell and closes only at high magnetic fields. In contrast, the coupling can be suppressed which leads to a strong reduction of the induced gap and critical magnetic field. At the crossover between the strong-coupling and weak-coupling regimes, we observe the closing and reopening of the induced gap in the bulk of a nanowire. Contrary to expectations, it is not accompanied by the formation of zero-bias peaks in the local conductance spectra. As a result, this cannot be attributed conclusively to the anticipated topological phase transition and we discuss possible alternative explanations.

In superconducting quantum circuits, aluminum is one of the most widely used materials. It is currently also the superconductor of choice for the development of topological qubits. In this application, however, aluminum-based devices suffer from poor magnetic field compatibility. In this article, we resolve this limitation by showing that adatoms of heavy elements (e.g. platinum) increase the critical field of thin aluminum films by more than a factor of two. Using tunnel junctions, we show that the increased field resilience originates from spin-orbit scattering introduced by Pt. We exploit this property in the context of the superconducting proximity effect in semiconductor-superconductor hybrids, where we show that InSb nanowires strongly coupled to Al/Pt films can maintain superconductivity up to 7T. The two-electron charging effect, a fundamental requirement for topological quantum computation, is shown to be robust against the presence of heavy adatoms. Additionally, we use non-local spectroscopy in a three-terminal geometry to probe the bulk of hybrid devices, showing that it remains free of sub-gap states. Finally, we demonstrate that semiconductor states which are proximitized by Al/Pt films maintain their ability to Zeeman-split in an applied magnetic field. Combined with the chemical stability and well-known fabrication routes of aluminum, Al/Pt emerges as the natural successor to Al-based systems and is a compelling alternative to other superconductors, whenever high-field resilience is required.

We measure the charge periodicity of Coulomb blockade conductance oscillations of a hybrid InSb-Al island as a function of gate voltage and parallel magnetic field. The periodicity changes from $2e$ to $1e$ at a gate-dependent value of the magnetic field, $B^*$, decreasing from a high to a low limit upon increasing the gate voltage. In the gate voltage region between the two limits, which our numerical simulations indicate to be the most promising for locating Majorana zero modes, we observe correlated oscillations of peak spacings and heights. For positive gate voltages, the $2e$-$1e$ transition with low $B^*$ is due to the presence of non-topological states whose energy quickly disperses below the charging energy due to the orbital effect of the magnetic field. Our measurements demonstrate the importance of a careful exploration of the entire available phase space of a proximitized nanowire as a prerequisite to define future topological qubits., Comment: 5 pages, 4 figures plus supplementary. v2: improved manuscript. v3: published version. Raw data and source code available at https://doi.org/10.4121/13333451.v4

The mechanical properties of Cu/Nb metallic nanolaminates with different layer thickness (7, 16, 34 and 63 nm) were studied by means of micropillar compression tests from room temperature to 400 C. Both strain-rate jump and constant strain rate tests were carried out and they showed evidence of dynamic strain ageing in the nanolaminates with 7, 16 and 34 nm layer thickness deformed at 200 C. Dynamic strain ageing was accompanied by a reduction of the strain rate sensitivity to 0, high strength retention at 200 C and the development of shear localization of the deformation at low strains (5%-6%) that took place along the Nb layers in the nanolaminates. Atom probe tomography of the deformed specimens revealed the presence of O in solid solution in the Nb layers but not in the Cu layers. Thus, diffusion of O atoms to the mobile dislocations in Nb was found to be the origin of the dynamic strain ageing in the Cu/Nb nanolaminates around 200 C. This mechanism was not found at higher temperatures (400 C) because deformation was mainly controlled by stress-assisted diffusion in the Cu layers. This discovery shows a novel strategy to enhance the strength retention at high temperature of metallic nanolaminates through dynamic strain ageing of one the phases.

The influence of solute atoms (Al and Zn) on the deformation mechanisms and the critical resolved shear stress for basal slip in Mg alloys at 298 K and 373 K was ascertained by micropillar compression tests in combination with high-throughput processing techniques based on the diffusion couples. It was found that the presence of solute atoms enhances the size effect at 298 K as well as the localization of deformation in slip bands, which is associated with large strain bursts in the resolved shear stress ($\tau_{RSS}$)-strain ($\epsilon$) curves. Deformation in pure Mg and Mg alloys was more homogeneous at 373 K and the influence of the micropillar size on the critical resolved shear stress was much smaller. In this latter case, it was possible to determine the effect of solute content on the critical resolved shear stress for basal slip in Mg-Al and Mg-Zn alloys.