Search

Your search keyword '"Wahl, Jeremy A."' showing total 7 results
Start Over Author "Wahl, Jeremy A." Publication Year Range Last 10 years
7 results on '"Wahl, Jeremy A."'

1. mmWave and sub-THz Technology Development in Intel 22nm FinFET (22FFL) Process

Author

Yu, Qiang, primary, Rami, Said, additional, Waldemer, James, additional, Ma, Yunzhe, additional, Neeli, Vijaya, additional, Garrett, Jeffrey, additional, Liu, Guannan, additional, Koo, Jabeom, additional, Marulanda, Mauricio, additional, Morarka, Saurabh, additional, Ravikumar, Surej, additional, Yeh, Yi-Shin, additional, Chou, Jessica, additional, Brown, Thomas, additional, Rane, Triveni, additional, Nieva, Carlos, additional, Ali, Dyan, additional, Joglekar, Sameer, additional, Armstrong, Mark, additional, Wahl, Jeremy, additional, Paulson, Leif, additional, Dogiamis, Georgios, additional, Monroe, Nathan, additional, Han, Ruonan, additional, Lee, Hyung-Jin, additional, Fu, Hui, additional, Sell, Bernhard, additional, Karl, Eric, additional, and Zhang, Ying, additional

Published
2020
Full Text
View/download PDF

2. (Invited)Extending Advanced CMOS Scaling with SiGe Channel Materials

Author

Carter, Rick J, primary, Sporer, Ryan, additional, McArdle, Timothy J, additional, Mulfinger, George Robert, additional, Holt, Judson Robert, additional, Beasor, Scott, additional, Child, Amy, additional, Fronheiser, Jody, additional, Wahl, Jeremy A, additional, Geisler, Holm, additional, Kluth, George J, additional, Triyoso, Dina H, additional, Punchihewa, Kasun, additional, Rana, Uzma, additional, Vanamurthy, Laks, additional, and Sohn, D K, additional

Published
2018
Full Text
View/download PDF

3. XPS-XRF hybrid metrology enabling FDSOI process

Author

Hossain, Mainul, additional, Subramanian, Ganesh, additional, Triyoso, Dina, additional, Wahl, Jeremy, additional, Mcardle, Timothy, additional, Vaid, Alok, additional, Bello, A. F., additional, Lee, Wei Ti, additional, Klare, Mark, additional, Kwan, Michael, additional, Pois, Heath, additional, Wang, Ying, additional, and Larson, Tom, additional

Published
2016
Full Text
View/download PDF

5. (Invited) Factors Impacting Threshold Voltage in Advanced CMOS Integration: Gate Last (FINFET) vs. Gate First (FDSOI)

Author

Triyoso, Dina, primary, Carter, Rick, additional, Kluth, Jon, additional, Luning, Scott, additional, Child, Amy, additional, Wahl, Jeremy, additional, Mulfinger, Bob, additional, Punchihewa, Kasun, additional, Kumar, Anil, additional, Kang, Laegu, additional, Sporer, Ryan, additional, Chen, Xiaobo, additional, Straub, Sherry, additional, Bohra, Girish, additional, Patil, Suraj, additional, Zhang, Xing, additional, Chen, Alex, additional, Togo, Mitsuhiro, additional, and Pal, Rohit, additional

Published
2015
Full Text
View/download PDF

6. (Invited) Extending Advanced CMOS Scaling with SiGe Channel Materials

Author

Carter, Rick J, Sporer, Ryan, McArdle, Timothy J, Robert, George, Robert, Judson, Beasor, Scott, Child, Amy, Fronheiser, Jody, Wahl, Jeremy A, Geisler, Holm, Kluth, George J, Triyoso, Dina H, Punchihewa, Kasun, Rana, Uzma, Vanamurthy, Laks, and Sohn, D K

Abstract

Advanced CMOS Scaling has benefited from the introduction of novel materials and integration techniques over the past two decades. Consumer demand for more connectivity and real-time information continues to drive the need for product solutions with advanced power management and increased functionality while maintaining low cost. New device architectures such as FINFET and Fully Depleted Silicon-On-Insulator are part of the solution, however these device architectures still rely on advanced channel strain engineering to meet power, performance, and scaling requirements. The use of SiGe as a channel material is attractive due to enhanced mobility and compatibility with standard CMOS processing. PFET drive current enhancement has already been realized to enable platforms based on high performance planar FDSOI devices, while SiGe as part of the channel is also a top solution to enable next generation FINFET and Gate-All-Around devices. In this invited paper we will provide a look into the device benefits and challenges of SiGe as a channel material.

Published
2018

7. XPS-XRF hybrid metrology enabling FDSOI process

Author

Sanchez, Martha I., Ukraintsev, Vladimir A., Hossain, Mainul, Subramanian, Ganesh, Triyoso, Dina, Wahl, Jeremy, Mcardle, Timothy, Vaid, Alok, Bello, A. F., Lee, Wei Ti, Klare, Mark, Kwan, Michael, Pois, Heath, Wang, Ying, and Larson, Tom

Published
2016
Full Text
View/download PDF

Catalog

Books, media, physical & digital resources
See catalog results