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2. Lg = 60 nm In0.53 Ga0.47 As MBCFETs: From gm_max = 13.7 mS/üm and Q = 180 to virtual-source modeling

14. Lg = 130 nm GAA MBCFETs with three-level stacked In0.53Ga0.47As nanosheets

31. High-performance III–V devices for future logic applications

33. Defect analyses of selective epitaxial grown GaAs on STI patterned (0 0 1) Si substrates.

34. The effects of single-dose dexamethasone on inflammatory response and pain after uterine artery embolisation for symptomatic fibroids or adenomyosis: a randomised controlled study.

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