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Orthorhombic κ-Ga2O3 thin films were grown for the first time on polycrystalline diamond free-standing substrates by metal-organic vapor phase epitaxy at a temperature of 650 °C. Structural, morphological, electrical, and photoelectronic properties of the obtained heterostructures were evaluated by optical microscopy, X-ray diffraction, current-voltage measurements, and spectral photoconductivity, respectively. Results show that a very slow cooling, performed at low pressure (100 mbar) under a controlled He flow soon after the growth process, is mandatory to improve the quality of the κ-Ga2O3 epitaxial thin film, ensuring a good adhesion to the diamond substrate, an optimal morphology, and a lower density of electrically active defects. This paves the way for the future development of novel hybrid architectures for UV and ionizing radiation detection, exploiting the unique features of gallium oxide and diamond as wide-bandgap semiconductors. [ABSTRACT FROM AUTHOR]

Thin films based on barium fluoride (BaFx) have demonstrated the capability to reduce the work function of photovoltaic (PV) anodes in hybrid thermionic devices for the conversion of thermal‐to‐electrical energy. Because PV anodes integrated in thermionic converters can operate at temperatures higher than room temperature, in this study, X‐ray photoelectron spectroscopy (XPS) and ultraviolet photoelectron spectroscopy (UPS) were used to investigate the temperature dependence up to 300°C of the chemical and physical properties of BaFx thin‐films, deposited on gallium arsenide and silicon, that represent possible candidates for PV anodes. A correlation between chemical composition and work function reduction by 0.5 ± 0.1 eV for the thin films on both GaAs and Si has been found as a function of temperature from room temperature to 300°C. According to XPS analyses, this effect can be ascribable to the thermal desorption of the first contaminated layers of BaFx coatings. [ABSTRACT FROM AUTHOR]

Thin films based on scandium oxide (Sc2O3) were deposited on silicon substrates to investigate the thickness effect on the reduction of work function. X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), energy dispersive X-ray reflectivity (EDXR), atomic force microscopy (AFM), and ultraviolet photoelectron spectroscopy (UPS) measurements were performed on the films deposited by electron-beam evaporation with different nominal thicknesses (in the range of 2–50 nm) and in multi-layered mixed structures with barium fluoride (BaF2) films. The obtained results indicate that non-continuous films are required to minimize the work function (down to 2.7 eV at room temperature), thanks to the formation of surface dipole effects between crystalline islands and substrates, even if the stoichiometry is far from the ideal one (Sc/O = 0.38). Finally, the presence of BaF2 in multi-layered films is not beneficial for a further reduction in the work function. [ABSTRACT FROM AUTHOR]

Photoelectronic properties of orthorhombic undoped κ-Ga2O3 epitaxial thin films, grown on sapphire substrates by metal–organic vapour phase epitaxy, were evaluated under X-ray irradiation (CuKα line, 8.05 keV) for the first time. Photoresponse linearity at low dose-rates (varying in the 10–200 μGy s−1 range), and excellent detection sensitivity (up to 342.3 μC Gy−1 cm−3), were demonstrated even at very low applied electric fields (down to 0.001 V μm−1). Photocurrent rise time was evaluated to be <0.5 s, and signal stability was assessed for exposure times up to 2 h, highlighting no degradation of the performance. These encouraging results, mostly due to the extremely low dark current measured (in the pA range), suggest that orthorhombic undoped κ-Ga2O3 is a promising material for the fabrication of sensitive and stable large-area X-ray detectors with minimum power consumption. [ABSTRACT FROM AUTHOR]

Dielectric microspacers (DMS) are important components in thermal energy converters. Engineered DMS are fabricated and characterized on different substrates by depositing patterned ceramic thin films of alumina (Al2O3) and zirconia (ZrO2) with a thickness ranging from 0.3 to 3 μm. Both Al2O3 and ZrO2 films are electrically and thermally optimized, finding zirconia more suitable as a thermal and electrical insulating material at high temperature, whereas the developed DMS are morphologically analyzed by scanning electron microscopy. The analysis of thermal simulations carried out with COMSOL Multiphysics allows identifying the best geometrical constraints for each single structure, whereas simulations carried out by the Fluent software allow identifying the best arrangement for DMS, leading to a solution with optimized pattern in terms of amount and spatial distribution so to achieve the required electrical and thermal insulation for practical applications. DMS are integrated within thermionic‐photovoltaic devices to be validated experimentally, and enhanced electron emission measurements are successfully performed at a cathode temperature up to 1350 °C to verify the operational feasibility and potential of this technology. [ABSTRACT FROM AUTHOR]