44 results on '"Pearton, S.J."'
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2. Role of surface treatments and localized surface plasmon nanoparticles on internal quantum efficiency of 800 nm diameter blue GaN/InGaN nano light emitting diodes
3. High-quality Cr2O3 - Ga2O3 solid solutions films grown by mist-CVD epitaxy
4. Ion energy dependence of dry etch damage depth in Ga2O3 Schottky rectifiers
5. 60Co γ-irradiation of AlGaN UVC light-emitting diodes
6. Conducting surface layers formed by hydrogenation of O-implanted β-Ga2O3
7. Two-dimensional hole gas formation at the κ-Ga2O3 /AlN heterojunction interface
8. Degradation by sidewall recombination centers in GaN blue micro-LEDs at diameters
9. Dry Etch Damage in Widegap Semiconductor Materials
10. On the nature of photosensitivity gain in Ga2O3 Schottky diode detectors: Effects of hole trapping by deep acceptors
11. Dislocations introduced in n-GaN at room temperature cause conductivity inversion
12. Post dry etching treatment of nanopillar GaN/InGaN multi-quantum-wells
13. Contributors
14. Thermal effects in Ga2O3 rectifiers and MOSFETs borrowing from GaN
15. Deep traps in InGaN/GaN single quantum well structures grown with and without InGaN underlayers
16. A comparative study of wet etching and contacts on [formula omitted] and (010) oriented β-Ga2O3
17. Band offsets in ITO/Ga2O3 heterostructures
18. Band alignment of Al2O3 with (−201) β-Ga2O3
19. Valence and conduction band offsets in AZO/Ga2O3 heterostructures
20. Nanocrack formation in AlGaN/GaN high electron mobility transistors utilizing Ti/Al/Ni/Au ohmic contacts
21. Erosion defect formation in Ni-gate AlGaN/GaN high electron mobility transistors
22. Band offsets in sputtered Sc2O3/InGaZnO4 heterojunctions
23. Nanosensor networks for health-care applications
24. Reproducible and High-Temperature Performance of NiO/ $\beta$-Ga2O3 Vertical Rectifiers in Achieving 8.9 kV Breakdown
25. Deep traps determining the non-radiative lifetime and defect band yellow luminescence in n-GaN
26. Band alignment in ZrSiO4/ZnO heterojunctions
27. Contributors
28. ZrSiOx/IGZO heterojunctions band offsets determined by X-ray photoelectron spectroscopy
29. Valence and conduction band offsets in sputtered HfO2/InGaZnO4 heterostructures
30. 19 - Thermal effects in Ga2O3 rectifiers and MOSFETs borrowing from GaN
31. Exfoliated and bulk β-gallium oxide electronic and photonic devices
32. Devices for High-Frequency Applications
33. Corrigendum to “Post dry etching treatment of nanopillar GaN/InGaN multi-quantum-wells” [J. Alloy. Compd. 868 (2021) 159211]
34. Retraction notice to “Recent progress in processing and properties of ZnO” [Prog. Mater. Sci. 50(3) (2004) 293–340]
35. Chapter 24 - Nanosensor networks for health-care applications
36. Annealing Effects on the Band Alignment of ALD SiO2 on (Inx Ga1−x )2 O3 for x = 0.25–0.74
37. Electronic properties of dopants and defects in widegap and ultra-widegap semiconductors and alloys
38. A comparative study of wet etching and contacts on (2¯01) and (010) oriented β-Ga2O3
39. List of contributors
40. Device processing and junction formation needs for ultra-high power Ga2O3 electronics.
41. Device processing and junction formation needs for ultra-high power Ga2O3electronics
42. 1 mm2, 3.6 kV, 4.8 A NiO/Ga2O3Heterojunction Rectifiers
43. Sidewall Electrical Damage in β-Ga2O3Rectifiers Exposed to Ga+Focused Ion Beams
44. Effects of InAlN underlayer on deep traps detected in near-UV InGaN/GaN single quantum well light-emitting diodes
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